CN101777481B - 用于离子注入系统的混合型磁性/静电偏转器 - Google Patents

用于离子注入系统的混合型磁性/静电偏转器 Download PDF

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Publication number
CN101777481B
CN101777481B CN2009102668721A CN200910266872A CN101777481B CN 101777481 B CN101777481 B CN 101777481B CN 2009102668721 A CN2009102668721 A CN 2009102668721A CN 200910266872 A CN200910266872 A CN 200910266872A CN 101777481 B CN101777481 B CN 101777481B
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CN
China
Prior art keywords
coil
ion
magnetic field
magnetic
along
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Expired - Fee Related
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CN2009102668721A
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English (en)
Chinese (zh)
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CN101777481A (zh
Inventor
V·班威尼斯特
R·拉斯梅尔
黄扬强
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)
CN2009102668721A 2003-06-13 2004-06-14 用于离子注入系统的混合型磁性/静电偏转器 Expired - Fee Related CN101777481B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/461,702 US6881966B2 (en) 2003-05-15 2003-06-13 Hybrid magnetic/electrostatic deflector for ion implantation systems
US10/461702 2003-06-13
US10/461,702 2003-06-13

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN200480016510A Division CN100592459C (zh) 2003-06-13 2004-06-14 用于离子注入系统的混合型磁性/静电偏转器

Publications (2)

Publication Number Publication Date
CN101777481A CN101777481A (zh) 2010-07-14
CN101777481B true CN101777481B (zh) 2012-06-27

Family

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CN2009102668721A Expired - Fee Related CN101777481B (zh) 2003-06-13 2004-06-14 用于离子注入系统的混合型磁性/静电偏转器
CN200480016510A Expired - Fee Related CN100592459C (zh) 2003-06-13 2004-06-14 用于离子注入系统的混合型磁性/静电偏转器

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CN200480016510A Expired - Fee Related CN100592459C (zh) 2003-06-13 2004-06-14 用于离子注入系统的混合型磁性/静电偏转器

Country Status (7)

Country Link
US (1) US6881966B2 (enExample)
EP (1) EP1634316B1 (enExample)
JP (2) JP4650748B2 (enExample)
KR (1) KR101157676B1 (enExample)
CN (2) CN101777481B (enExample)
TW (1) TWI314337B (enExample)
WO (1) WO2004114354A2 (enExample)

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JP4901094B2 (ja) * 2004-11-30 2012-03-21 株式会社Ｓｅｎ ビーム照射装置
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US7675047B2 (en) * 2005-11-15 2010-03-09 Varian Semiconductor Equipment Associates, Inc. Technique for shaping a ribbon-shaped ion beam
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US9443698B2 (en) * 2008-10-06 2016-09-13 Axcelis Technologies, Inc. Hybrid scanning for ion implantation
US8466431B2 (en) * 2009-02-12 2013-06-18 Varian Semiconductor Equipment Associates, Inc. Techniques for improving extracted ion beam quality using high-transparency electrodes
US8232532B2 (en) * 2009-06-23 2012-07-31 Hitachi Global Storage Technologies Netherlands B.V. Off-axis ion milling device for manufacture of magnetic recording media and method for using the same
CN101838797B (zh) * 2009-12-18 2012-07-04 上海凯世通半导体有限公司 离子注入方法
JP5500500B2 (ja) * 2010-03-11 2014-05-21 日新イオン機器株式会社 非対称なアインツェルレンズを有するビーム偏向器を備えたイオン注入装置
US8816281B2 (en) 2011-03-28 2014-08-26 Tokyo Electron Limited Ion energy analyzer and methods of manufacturing the same
CN102751155B (zh) * 2011-04-22 2015-02-11 上海凯世通半导体有限公司 束流传输系统及其传输方法
JP5800286B2 (ja) * 2012-03-09 2015-10-28 日新イオン機器株式会社 イオン注入装置
US20150228445A1 (en) * 2014-02-13 2015-08-13 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for three dimensional ion implantation
US9455116B2 (en) 2014-04-30 2016-09-27 Axcells Technologies, Inc. Angular scanning using angular energy filter
CN105895486A (zh) * 2014-12-18 2016-08-24 北京中科信电子装备有限公司 一种带电粒子束流偏转磁场结构及应用该结构的离子注入机
CN106653533B (zh) * 2015-11-04 2018-08-14 北京中科信电子装备有限公司 一种带电粒子束流磁场聚焦结构及应用该结构的离子注入机
JP6854628B2 (ja) * 2016-11-10 2021-04-07 東京エレクトロン株式会社 プラズマ溶射装置及び溶射制御方法
TWI795448B (zh) 2017-10-09 2023-03-11 美商艾克塞利斯科技公司 用於在角能量過濾器區域中穩定或移除射束線組件上所形成之膜的離子植入系統及方法
US11101134B2 (en) * 2018-09-10 2021-08-24 Exogenesis Corporation Method and apparatus to eliminate contaminant particles from an accelerated neutral atom beam and thereby protect a beam target
CN109473344B (zh) * 2018-11-13 2021-08-03 上海华力微电子有限公司 一种离子注入的方法及设备
CN114145078B (zh) 2019-07-19 2025-03-21 阳光技术有限责任公司 采用气体偏转器板的制造物品、系统和方法
CN112799120B (zh) * 2019-11-13 2024-03-22 中国科学院国家空间科学中心 一种离子和电子同步测量的双通道静电分析器

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CN1405836A (zh) * 2001-08-09 2003-03-26 日新电机株式会社 在靶上注入离子的装置及其方法

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Also Published As

Publication number Publication date
EP1634316A2 (en) 2006-03-15
KR20060018240A (ko) 2006-02-28
WO2004114354A2 (en) 2004-12-29
TW200503042A (en) 2005-01-16
CN101777481A (zh) 2010-07-14
US20040227105A1 (en) 2004-11-18
EP1634316B1 (en) 2011-11-23
CN100592459C (zh) 2010-02-24
CN1806309A (zh) 2006-07-19
JP2009117393A (ja) 2009-05-28
US6881966B2 (en) 2005-04-19
WO2004114354A3 (en) 2005-03-17
JP4650748B2 (ja) 2011-03-16
TWI314337B (en) 2009-09-01
KR101157676B1 (ko) 2012-07-03
JP4645965B2 (ja) 2011-03-09
JP2007517358A (ja) 2007-06-28

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