AU2002231340A1 - Compact beamline and ion implanter system using same - Google Patents

Compact beamline and ion implanter system using same

Info

Publication number
AU2002231340A1
AU2002231340A1 AU2002231340A AU2002231340A AU2002231340A1 AU 2002231340 A1 AU2002231340 A1 AU 2002231340A1 AU 2002231340 A AU2002231340 A AU 2002231340A AU 2002231340 A AU2002231340 A AU 2002231340A AU 2002231340 A1 AU2002231340 A1 AU 2002231340A1
Authority
AU
Australia
Prior art keywords
same
ion implanter
implanter system
beamline
compact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002231340A
Inventor
Donald W. Berrian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Proteros LLC
Original Assignee
Proteros LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Proteros LLC filed Critical Proteros LLC
Publication of AU2002231340A1 publication Critical patent/AU2002231340A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H01J37/1472—Deflecting along given lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
AU2002231340A 2000-12-27 2001-12-27 Compact beamline and ion implanter system using same Abandoned AU2002231340A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25835200P 2000-12-27 2000-12-27
US60/258,352 2000-12-27
PCT/US2001/050844 WO2002052609A2 (en) 2000-12-27 2001-12-27 Compact beamline and ion implanter system using same

Publications (1)

Publication Number Publication Date
AU2002231340A1 true AU2002231340A1 (en) 2002-07-08

Family

ID=22980196

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002231340A Abandoned AU2002231340A1 (en) 2000-12-27 2001-12-27 Compact beamline and ion implanter system using same

Country Status (2)

Country Link
AU (1) AU2002231340A1 (en)
WO (1) WO2002052609A2 (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3738734B2 (en) 2002-02-06 2006-01-25 日新電機株式会社 Electrostatic accelerator tube and ion implantation apparatus including the same
US6777696B1 (en) 2003-02-21 2004-08-17 Axcelis Technologies, Inc. Deflecting acceleration/deceleration gap
US6881966B2 (en) * 2003-05-15 2005-04-19 Axcelis Technologies, Inc. Hybrid magnetic/electrostatic deflector for ion implantation systems
US7619228B2 (en) 2006-09-29 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for improved ion beam transport
US20100065761A1 (en) * 2008-09-17 2010-03-18 Axcelis Technologies, Inc. Adjustable deflection optics for ion implantation
US8129695B2 (en) * 2009-12-28 2012-03-06 Varian Semiconductor Equipment Associates, Inc. System and method for controlling deflection of a charged particle beam within a graded electrostatic lens
US8519353B2 (en) 2010-12-29 2013-08-27 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for controlling an asymmetric electrostatic lens about a central ray trajectory of an ion beam
US8378313B2 (en) * 2011-03-31 2013-02-19 Axcelis Technologies, Inc. Uniformity of a scanned ion beam
JP6257411B2 (en) * 2014-03-27 2018-01-10 住友重機械イオンテクノロジー株式会社 Ion implantation apparatus, final energy filter, and ion implantation method

Also Published As

Publication number Publication date
WO2002052609A2 (en) 2002-07-04
WO2002052609A3 (en) 2003-02-06

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase