WO2002052609A3 - Compact beamline and ion implanter system using same - Google Patents
Compact beamline and ion implanter system using same Download PDFInfo
- Publication number
- WO2002052609A3 WO2002052609A3 PCT/US2001/050844 US0150844W WO02052609A3 WO 2002052609 A3 WO2002052609 A3 WO 2002052609A3 US 0150844 W US0150844 W US 0150844W WO 02052609 A3 WO02052609 A3 WO 02052609A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- column
- beamline
- acceleration
- electrodes
- same
- Prior art date
Links
- 230000001133 acceleration Effects 0.000 abstract 6
- 238000010884 ion-beam technique Methods 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
- H01J37/1472—Deflecting along given lines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2002231340A AU2002231340A1 (en) | 2000-12-27 | 2001-12-27 | Compact beamline and ion implanter system using same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US25835200P | 2000-12-27 | 2000-12-27 | |
US60/258,352 | 2000-12-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2002052609A2 WO2002052609A2 (en) | 2002-07-04 |
WO2002052609A3 true WO2002052609A3 (en) | 2003-02-06 |
Family
ID=22980196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2001/050844 WO2002052609A2 (en) | 2000-12-27 | 2001-12-27 | Compact beamline and ion implanter system using same |
Country Status (2)
Country | Link |
---|---|
AU (1) | AU2002231340A1 (en) |
WO (1) | WO2002052609A2 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3738734B2 (en) | 2002-02-06 | 2006-01-25 | 日新電機株式会社 | Electrostatic accelerator tube and ion implantation apparatus including the same |
US6777696B1 (en) * | 2003-02-21 | 2004-08-17 | Axcelis Technologies, Inc. | Deflecting acceleration/deceleration gap |
US6881966B2 (en) * | 2003-05-15 | 2005-04-19 | Axcelis Technologies, Inc. | Hybrid magnetic/electrostatic deflector for ion implantation systems |
US7619228B2 (en) | 2006-09-29 | 2009-11-17 | Varian Semiconductor Equipment Associates, Inc. | Technique for improved ion beam transport |
US20100065761A1 (en) * | 2008-09-17 | 2010-03-18 | Axcelis Technologies, Inc. | Adjustable deflection optics for ion implantation |
US8129695B2 (en) * | 2009-12-28 | 2012-03-06 | Varian Semiconductor Equipment Associates, Inc. | System and method for controlling deflection of a charged particle beam within a graded electrostatic lens |
US8519353B2 (en) | 2010-12-29 | 2013-08-27 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for controlling an asymmetric electrostatic lens about a central ray trajectory of an ion beam |
US8378313B2 (en) * | 2011-03-31 | 2013-02-19 | Axcelis Technologies, Inc. | Uniformity of a scanned ion beam |
JP6257411B2 (en) * | 2014-03-27 | 2018-01-10 | 住友重機械イオンテクノロジー株式会社 | Ion implantation apparatus, final energy filter, and ion implantation method |
-
2001
- 2001-12-27 AU AU2002231340A patent/AU2002231340A1/en not_active Abandoned
- 2001-12-27 WO PCT/US2001/050844 patent/WO2002052609A2/en not_active Application Discontinuation
Non-Patent Citations (1)
Title |
---|
No relevant documents disclosed * |
Also Published As
Publication number | Publication date |
---|---|
AU2002231340A1 (en) | 2002-07-08 |
WO2002052609A2 (en) | 2002-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100681968B1 (en) | Methods and apparatus for adjusting beam parallelism in ion implanters | |
WO1989004586A3 (en) | Method and apparatus for generating particle beams | |
EP1774559B1 (en) | Electrostatic lens for ion beams | |
CN1256751C (en) | High efficiency scanning in ion implanters | |
EP1253620A3 (en) | Ion beam scanning method and apparatus | |
ATE443922T1 (en) | ELECTRON-OPTICAL ARRANGEMENT, METHOD FOR PRODUCING THE SAME, CHARGED PARTICLE BEAM EXPOSURE APPARATUS AND METHOD FOR PRODUCING THE ASSOCIATED DEVICE | |
KR20010052514A (en) | Acceleration and analysis architecture for ion implanter | |
EP0630042A3 (en) | Method of high mass resolution scanning of an ion trap spectrometer. | |
WO2002052609A3 (en) | Compact beamline and ion implanter system using same | |
EP2043131A3 (en) | Minute sample processing method | |
WO2004077479A3 (en) | Deflecting acceleration/deceleration gap | |
US6326631B1 (en) | Ion implantation device arranged to select neutral ions from the ion beam | |
EP0965818A3 (en) | Rotary laser irradiating apparatus | |
US5099130A (en) | Apparatus and methods relating to scanning ion beams | |
CA2099685A1 (en) | Focused Ion Beam Implantation Apparatus | |
JPS57182956A (en) | Ion-implantation device | |
JP2002525820A5 (en) | ||
EP0377298A3 (en) | Uniform cross section ion beam system | |
WO1995027994A3 (en) | Particle-optical apparatus comprising a detector for secondary electrons | |
JPS61240553A (en) | Device for drawing picture by the use of ion beam | |
EP0262855A3 (en) | Production of pulsed electron beams | |
WO2000075954A3 (en) | Apparatus and method for forming a charged particle beam of arbitrary shape | |
EP1699067A3 (en) | Method of controlling an ion beam | |
EP0486149A3 (en) | Method and apparatus for reducing tilt angle variations in an ion implanter | |
JPH07105901A (en) | Ion implanting device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
AK | Designated states |
Kind code of ref document: A3 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ PL PT RO RU SD SE SG SI SK SL TJ TM TR TT TZ UA UG US UZ VN YU ZA ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A3 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE CH CY DE DK ES FI FR GB GR IE IT LU MC NL PT SE TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
REG | Reference to national code |
Ref country code: DE Ref legal event code: 8642 |
|
122 | Ep: pct application non-entry in european phase | ||
NENP | Non-entry into the national phase in: |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |