TWI314337B - A magnetic deflector for a ribbon-shaped beam or a scanned pencil-shaped beam ,a system of an ion implantation and a hybrid deflector for ion implantation,and a method of deflecting an ion beam prior to implantation into a workpiece in order to reduce - Google Patents
A magnetic deflector for a ribbon-shaped beam or a scanned pencil-shaped beam ,a system of an ion implantation and a hybrid deflector for ion implantation,and a method of deflecting an ion beam prior to implantation into a workpiece in order to reduce Download PDFInfo
- Publication number
- TWI314337B TWI314337B TW093116808A TW93116808A TWI314337B TW I314337 B TWI314337 B TW I314337B TW 093116808 A TW093116808 A TW 093116808A TW 93116808 A TW93116808 A TW 93116808A TW I314337 B TWI314337 B TW I314337B
- Authority
- TW
- Taiwan
- Prior art keywords
- coils
- magnetic
- ion
- coil
- deflector
- Prior art date
Links
- 238000010884 ion-beam technique Methods 0.000 title claims description 71
- 238000000034 method Methods 0.000 title claims description 22
- 238000005468 ion implantation Methods 0.000 title claims description 11
- 238000002513 implantation Methods 0.000 title description 4
- 150000002500 ions Chemical class 0.000 claims description 47
- 230000005686 electrostatic field Effects 0.000 claims description 10
- 230000005611 electricity Effects 0.000 claims description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 8
- 239000004020 conductor Substances 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 4
- 230000005591 charge neutralization Effects 0.000 claims description 4
- 229910052742 iron Inorganic materials 0.000 claims description 4
- 230000003068 static effect Effects 0.000 claims description 4
- 238000010408 sweeping Methods 0.000 claims description 3
- 238000012937 correction Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 238000012546 transfer Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 claims 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims 2
- 238000004804 winding Methods 0.000 claims 2
- 229910052786 argon Inorganic materials 0.000 claims 1
- 235000021028 berry Nutrition 0.000 claims 1
- 239000006185 dispersion Substances 0.000 claims 1
- 229910052704 radon Inorganic materials 0.000 claims 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 claims 1
- 238000010792 warming Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 17
- 230000007935 neutral effect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- 238000004458 analytical method Methods 0.000 description 8
- 239000007943 implant Substances 0.000 description 8
- 239000000356 contaminant Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 206010037844 rash Diseases 0.000 description 5
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
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- 230000002829 reductive effect Effects 0.000 description 3
- 241000894007 species Species 0.000 description 3
- 206010011469 Crying Diseases 0.000 description 2
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 230000006399 behavior Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 238000006386 neutralization reaction Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 235000002566 Capsicum Nutrition 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 241000196324 Embryophyta Species 0.000 description 1
- 229910000592 Ferroniobium Inorganic materials 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- 239000006002 Pepper Substances 0.000 description 1
- 235000016761 Piper aduncum Nutrition 0.000 description 1
- 235000017804 Piper guineense Nutrition 0.000 description 1
- 244000203593 Piper nigrum Species 0.000 description 1
- 235000008184 Piper nigrum Nutrition 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
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- ZFGFKQDDQUAJQP-UHFFFAOYSA-N iron niobium Chemical compound [Fe].[Fe].[Nb] ZFGFKQDDQUAJQP-UHFFFAOYSA-N 0.000 description 1
- 210000004185 liver Anatomy 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
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- 230000002441 reversible effect Effects 0.000 description 1
- 235000015170 shellfish Nutrition 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/05—Arrangements for energy or mass analysis
- H01J2237/057—Energy or mass filtering
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Electron Sources, Ion Sources (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/461,702 US6881966B2 (en) | 2003-05-15 | 2003-06-13 | Hybrid magnetic/electrostatic deflector for ion implantation systems |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200503042A TW200503042A (en) | 2005-01-16 |
| TWI314337B true TWI314337B (en) | 2009-09-01 |
Family
ID=33538973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093116808A TWI314337B (en) | 2003-06-13 | 2004-06-11 | A magnetic deflector for a ribbon-shaped beam or a scanned pencil-shaped beam ,a system of an ion implantation and a hybrid deflector for ion implantation,and a method of deflecting an ion beam prior to implantation into a workpiece in order to reduce |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6881966B2 (enExample) |
| EP (1) | EP1634316B1 (enExample) |
| JP (2) | JP4650748B2 (enExample) |
| KR (1) | KR101157676B1 (enExample) |
| CN (2) | CN100592459C (enExample) |
| TW (1) | TWI314337B (enExample) |
| WO (1) | WO2004114354A2 (enExample) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4901094B2 (ja) * | 2004-11-30 | 2012-03-21 | 株式会社Ｓｅｎ | ビーム照射装置 |
| JP4964413B2 (ja) * | 2004-11-30 | 2012-06-27 | 株式会社Ｓｅｎ | イオンビーム／荷電粒子ビーム照射装置 |
| JP5042451B2 (ja) * | 2004-11-30 | 2012-10-03 | 株式会社Ｓｅｎ | ビーム空間電荷中和装置及びこれを備えたイオン注入装置 |
| US7598505B2 (en) * | 2005-03-08 | 2009-10-06 | Axcelis Technologies, Inc. | Multichannel ion gun |
| US7361913B2 (en) * | 2005-04-02 | 2008-04-22 | Varian Semiconductor Equipment Associates, Inc. | Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control |
| US7674687B2 (en) * | 2005-07-27 | 2010-03-09 | Silicon Genesis Corporation | Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process |
| US7675047B2 (en) * | 2005-11-15 | 2010-03-09 | Varian Semiconductor Equipment Associates, Inc. | Technique for shaping a ribbon-shaped ion beam |
| US7800082B2 (en) * | 2006-02-15 | 2010-09-21 | Varian Semiconductor Equipment Associates, Inc. | Electromagnet with active field containment |
| US7863157B2 (en) * | 2006-03-17 | 2011-01-04 | Silicon Genesis Corporation | Method and structure for fabricating solar cells using a layer transfer process |
| JP2009532918A (ja) | 2006-04-05 | 2009-09-10 | シリコン ジェネシス コーポレーション | レイヤトランスファプロセスを使用する太陽電池の製造方法および構造 |
| TWI435378B (zh) * | 2006-04-26 | 2014-04-21 | Axcelis Tech Inc | 劑量均勻性校正方法 |
| JP4828305B2 (ja) * | 2006-05-30 | 2011-11-30 | 株式会社Ｓｅｎ | 静電式ビーム偏向走査装置及びビーム偏向走査方法 |
| US8153513B2 (en) * | 2006-07-25 | 2012-04-10 | Silicon Genesis Corporation | Method and system for continuous large-area scanning implantation process |
| US7227160B1 (en) * | 2006-09-13 | 2007-06-05 | Axcelis Technologies, Inc. | Systems and methods for beam angle adjustment in ion implanters |
| US7507978B2 (en) * | 2006-09-29 | 2009-03-24 | Axcelis Technologies, Inc. | Beam line architecture for ion implanter |
| US7750320B2 (en) * | 2006-12-22 | 2010-07-06 | Axcelis Technologies, Inc. | System and method for two-dimensional beam scan across a workpiece of an ion implanter |
| US7586111B2 (en) * | 2007-07-31 | 2009-09-08 | Axcelis Technologies, Inc. | Ion implanter having combined hybrid and double mechanical scan architecture |
| US20090206275A1 (en) * | 2007-10-03 | 2009-08-20 | Silcon Genesis Corporation | Accelerator particle beam apparatus and method for low contaminate processing |
| US20100065761A1 (en) * | 2008-09-17 | 2010-03-18 | Axcelis Technologies, Inc. | Adjustable deflection optics for ion implantation |
| US9443698B2 (en) * | 2008-10-06 | 2016-09-13 | Axcelis Technologies, Inc. | Hybrid scanning for ion implantation |
| US8466431B2 (en) * | 2009-02-12 | 2013-06-18 | Varian Semiconductor Equipment Associates, Inc. | Techniques for improving extracted ion beam quality using high-transparency electrodes |
| US8232532B2 (en) * | 2009-06-23 | 2012-07-31 | Hitachi Global Storage Technologies Netherlands B.V. | Off-axis ion milling device for manufacture of magnetic recording media and method for using the same |
| CN101838797B (zh) * | 2009-12-18 | 2012-07-04 | 上海凯世通半导体有限公司 | 离子注入方法 |
| JP5500500B2 (ja) * | 2010-03-11 | 2014-05-21 | 日新イオン機器株式会社 | 非対称なアインツェルレンズを有するビーム偏向器を備えたイオン注入装置 |
| US8816281B2 (en) * | 2011-03-28 | 2014-08-26 | Tokyo Electron Limited | Ion energy analyzer and methods of manufacturing the same |
| CN102751155B (zh) * | 2011-04-22 | 2015-02-11 | 上海凯世通半导体有限公司 | 束流传输系统及其传输方法 |
| JP5800286B2 (ja) * | 2012-03-09 | 2015-10-28 | 日新イオン機器株式会社 | イオン注入装置 |
| US20150228445A1 (en) * | 2014-02-13 | 2015-08-13 | Varian Semiconductor Equipment Associates, Inc. | Method and apparatus for three dimensional ion implantation |
| US9455116B2 (en) | 2014-04-30 | 2016-09-27 | Axcells Technologies, Inc. | Angular scanning using angular energy filter |
| CN105895486A (zh) * | 2014-12-18 | 2016-08-24 | 北京中科信电子装备有限公司 | 一种带电粒子束流偏转磁场结构及应用该结构的离子注入机 |
| CN106653533B (zh) * | 2015-11-04 | 2018-08-14 | 北京中科信电子装备有限公司 | 一种带电粒子束流磁场聚焦结构及应用该结构的离子注入机 |
| JP6854628B2 (ja) * | 2016-11-10 | 2021-04-07 | 東京エレクトロン株式会社 | プラズマ溶射装置及び溶射制御方法 |
| TWI795448B (zh) | 2017-10-09 | 2023-03-11 | 美商艾克塞利斯科技公司 | 用於在角能量過濾器區域中穩定或移除射束線組件上所形成之膜的離子植入系統及方法 |
| WO2020055894A1 (en) * | 2018-09-10 | 2020-03-19 | Exogenesis Corporation | Method and apparatus to eliminate contaminants from an accelerated neutral atom beam to protect a beam target |
| CN109473344B (zh) * | 2018-11-13 | 2021-08-03 | 上海华力微电子有限公司 | 一种离子注入的方法及设备 |
| CA3272244A1 (en) | 2019-07-19 | 2025-10-30 | Shine Technologies, Llc | Gas jet deflection in pressurized systems |
| CN112799120B (zh) * | 2019-11-13 | 2024-03-22 | 中国科学院国家空间科学中心 | 一种离子和电子同步测量的双通道静电分析器 |
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| DE68922929T2 (de) * | 1988-03-23 | 1996-02-22 | Fujitsu Ltd., Kawasaki, Kanagawa | Photokathoden-Bildprojektionsapparat für die Mustergestaltung auf einer Halbleitervorrichtung. |
| JPH02260356A (ja) * | 1989-03-31 | 1990-10-23 | Ulvac Corp | イオン注入装置における平行走査系 |
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| EP2800144A1 (en) * | 2013-05-03 | 2014-11-05 | Saint-Gobain Glass France | Back contact substrate for a photovoltaic cell or module |
-
2003
- 2003-06-13 US US10/461,702 patent/US6881966B2/en not_active Expired - Lifetime
-
2004
- 2004-06-11 TW TW093116808A patent/TWI314337B/zh not_active IP Right Cessation
- 2004-06-14 EP EP04755134A patent/EP1634316B1/en not_active Expired - Lifetime
- 2004-06-14 KR KR1020057023293A patent/KR101157676B1/ko not_active Expired - Fee Related
- 2004-06-14 CN CN200480016510A patent/CN100592459C/zh not_active Expired - Fee Related
- 2004-06-14 CN CN2009102668721A patent/CN101777481B/zh not_active Expired - Fee Related
- 2004-06-14 JP JP2006533770A patent/JP4650748B2/ja not_active Expired - Lifetime
- 2004-06-14 WO PCT/US2004/018788 patent/WO2004114354A2/en not_active Ceased
-
2009
- 2009-02-27 JP JP2009046436A patent/JP4645965B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR101157676B1 (ko) | 2012-07-03 |
| EP1634316A2 (en) | 2006-03-15 |
| CN100592459C (zh) | 2010-02-24 |
| US20040227105A1 (en) | 2004-11-18 |
| JP4645965B2 (ja) | 2011-03-09 |
| JP2009117393A (ja) | 2009-05-28 |
| WO2004114354A2 (en) | 2004-12-29 |
| WO2004114354A3 (en) | 2005-03-17 |
| JP4650748B2 (ja) | 2011-03-16 |
| EP1634316B1 (en) | 2011-11-23 |
| US6881966B2 (en) | 2005-04-19 |
| KR20060018240A (ko) | 2006-02-28 |
| TW200503042A (en) | 2005-01-16 |
| CN101777481A (zh) | 2010-07-14 |
| JP2007517358A (ja) | 2007-06-28 |
| CN1806309A (zh) | 2006-07-19 |
| CN101777481B (zh) | 2012-06-27 |
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