CN100592459C - 用于离子注入系统的混合型磁性/静电偏转器 - Google Patents

用于离子注入系统的混合型磁性/静电偏转器 Download PDF

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Publication number
CN100592459C
CN100592459C CN200480016510A CN200480016510A CN100592459C CN 100592459 C CN100592459 C CN 100592459C CN 200480016510 A CN200480016510 A CN 200480016510A CN 200480016510 A CN200480016510 A CN 200480016510A CN 100592459 C CN100592459 C CN 100592459C
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CN
China
Prior art keywords
magnetic
ion beam
deflection module
electrostatic
energy
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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CN200480016510A
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English (en)
Chinese (zh)
Other versions
CN1806309A (zh
Inventor
V·班威尼斯特
R·拉斯梅尔
黄扬强
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Axcelis Technologies Inc
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Axcelis Technologies Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)
CN200480016510A 2003-06-13 2004-06-14 用于离子注入系统的混合型磁性/静电偏转器 Expired - Fee Related CN100592459C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/461,702 2003-06-13
US10/461,702 US6881966B2 (en) 2003-05-15 2003-06-13 Hybrid magnetic/electrostatic deflector for ion implantation systems

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN2009102668721A Division CN101777481B (zh) 2003-06-13 2004-06-14 用于离子注入系统的混合型磁性/静电偏转器

Publications (2)

Publication Number Publication Date
CN1806309A CN1806309A (zh) 2006-07-19
CN100592459C true CN100592459C (zh) 2010-02-24

Family

ID=33538973

Family Applications (2)

Application Number Title Priority Date Filing Date
CN200480016510A Expired - Fee Related CN100592459C (zh) 2003-06-13 2004-06-14 用于离子注入系统的混合型磁性/静电偏转器
CN2009102668721A Expired - Fee Related CN101777481B (zh) 2003-06-13 2004-06-14 用于离子注入系统的混合型磁性/静电偏转器

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CN2009102668721A Expired - Fee Related CN101777481B (zh) 2003-06-13 2004-06-14 用于离子注入系统的混合型磁性/静电偏转器

Country Status (7)

Country Link
US (1) US6881966B2 (enExample)
EP (1) EP1634316B1 (enExample)
JP (2) JP4650748B2 (enExample)
KR (1) KR101157676B1 (enExample)
CN (2) CN100592459C (enExample)
TW (1) TWI314337B (enExample)
WO (1) WO2004114354A2 (enExample)

Cited By (1)

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CN109473344A (zh) * 2018-11-13 2019-03-15 上海华力微电子有限公司 一种离子注入的方法及设备

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JP5042451B2 (ja) * 2004-11-30 2012-10-03 株式会社Ｓｅｎ ビーム空間電荷中和装置及びこれを備えたイオン注入装置
US7598505B2 (en) * 2005-03-08 2009-10-06 Axcelis Technologies, Inc. Multichannel ion gun
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US7675047B2 (en) * 2005-11-15 2010-03-09 Varian Semiconductor Equipment Associates, Inc. Technique for shaping a ribbon-shaped ion beam
US7800082B2 (en) * 2006-02-15 2010-09-21 Varian Semiconductor Equipment Associates, Inc. Electromagnet with active field containment
US7863157B2 (en) * 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
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US9443698B2 (en) * 2008-10-06 2016-09-13 Axcelis Technologies, Inc. Hybrid scanning for ion implantation
US8466431B2 (en) * 2009-02-12 2013-06-18 Varian Semiconductor Equipment Associates, Inc. Techniques for improving extracted ion beam quality using high-transparency electrodes
US8232532B2 (en) * 2009-06-23 2012-07-31 Hitachi Global Storage Technologies Netherlands B.V. Off-axis ion milling device for manufacture of magnetic recording media and method for using the same
CN101838797B (zh) * 2009-12-18 2012-07-04 上海凯世通半导体有限公司 离子注入方法
JP5500500B2 (ja) * 2010-03-11 2014-05-21 日新イオン機器株式会社 非対称なアインツェルレンズを有するビーム偏向器を備えたイオン注入装置
US8816281B2 (en) * 2011-03-28 2014-08-26 Tokyo Electron Limited Ion energy analyzer and methods of manufacturing the same
CN102751155B (zh) * 2011-04-22 2015-02-11 上海凯世通半导体有限公司 束流传输系统及其传输方法
JP5800286B2 (ja) * 2012-03-09 2015-10-28 日新イオン機器株式会社 イオン注入装置
US20150228445A1 (en) * 2014-02-13 2015-08-13 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for three dimensional ion implantation
US9455116B2 (en) 2014-04-30 2016-09-27 Axcells Technologies, Inc. Angular scanning using angular energy filter
CN105895486A (zh) * 2014-12-18 2016-08-24 北京中科信电子装备有限公司 一种带电粒子束流偏转磁场结构及应用该结构的离子注入机
CN106653533B (zh) * 2015-11-04 2018-08-14 北京中科信电子装备有限公司 一种带电粒子束流磁场聚焦结构及应用该结构的离子注入机
JP6854628B2 (ja) * 2016-11-10 2021-04-07 東京エレクトロン株式会社 プラズマ溶射装置及び溶射制御方法
TWI795448B (zh) 2017-10-09 2023-03-11 美商艾克塞利斯科技公司 用於在角能量過濾器區域中穩定或移除射束線組件上所形成之膜的離子植入系統及方法
WO2020055894A1 (en) * 2018-09-10 2020-03-19 Exogenesis Corporation Method and apparatus to eliminate contaminants from an accelerated neutral atom beam to protect a beam target
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CN112799120B (zh) * 2019-11-13 2024-03-22 中国科学院国家空间科学中心 一种离子和电子同步测量的双通道静电分析器

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CN1405836A (zh) * 2001-08-09 2003-03-26 日新电机株式会社 在靶上注入离子的装置及其方法

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US5206516A (en) * 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
GB2336029A (en) * 1998-03-31 1999-10-06 Tadamoto Tamai Ion implantation, ion source and variable slit mechanism
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109473344A (zh) * 2018-11-13 2019-03-15 上海华力微电子有限公司 一种离子注入的方法及设备
CN109473344B (zh) * 2018-11-13 2021-08-03 上海华力微电子有限公司 一种离子注入的方法及设备

Also Published As

Publication number Publication date
KR101157676B1 (ko) 2012-07-03
EP1634316A2 (en) 2006-03-15
US20040227105A1 (en) 2004-11-18
JP4645965B2 (ja) 2011-03-09
JP2009117393A (ja) 2009-05-28
WO2004114354A2 (en) 2004-12-29
WO2004114354A3 (en) 2005-03-17
JP4650748B2 (ja) 2011-03-16
EP1634316B1 (en) 2011-11-23
US6881966B2 (en) 2005-04-19
KR20060018240A (ko) 2006-02-28
TW200503042A (en) 2005-01-16
CN101777481A (zh) 2010-07-14
JP2007517358A (ja) 2007-06-28
CN1806309A (zh) 2006-07-19
CN101777481B (zh) 2012-06-27
TWI314337B (en) 2009-09-01

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