KR101157676B1 - 이온 주입 시스템용 하이브리드 자기/정전 편향기 - Google Patents

이온 주입 시스템용 하이브리드 자기/정전 편향기 Download PDF

Info

Publication number
KR101157676B1
KR101157676B1 KR1020057023293A KR20057023293A KR101157676B1 KR 101157676 B1 KR101157676 B1 KR 101157676B1 KR 1020057023293 A KR1020057023293 A KR 1020057023293A KR 20057023293 A KR20057023293 A KR 20057023293A KR 101157676 B1 KR101157676 B1 KR 101157676B1
Authority
KR
South Korea
Prior art keywords
coils
magnetic
ion
ion beam
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020057023293A
Other languages
English (en)
Korean (ko)
Other versions
KR20060018240A (ko
Inventor
빅터 벤베니스테
로버트 래스멜
영장 황
Original Assignee
액셀리스 테크놀로지스, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 액셀리스 테크놀로지스, 인크. filed Critical 액셀리스 테크놀로지스, 인크.
Publication of KR20060018240A publication Critical patent/KR20060018240A/ko
Application granted granted Critical
Publication of KR101157676B1 publication Critical patent/KR101157676B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/05—Electron or ion-optical arrangements for separating electrons or ions according to their energy or mass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/147—Arrangements for directing or deflecting the discharge along a desired path
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/05—Arrangements for energy or mass analysis
    • H01J2237/057—Energy or mass filtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Drying Of Semiconductors (AREA)
KR1020057023293A 2003-06-13 2004-06-14 이온 주입 시스템용 하이브리드 자기/정전 편향기 Expired - Fee Related KR101157676B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/461,702 2003-06-13
US10/461,702 US6881966B2 (en) 2003-05-15 2003-06-13 Hybrid magnetic/electrostatic deflector for ion implantation systems
PCT/US2004/018788 WO2004114354A2 (en) 2003-06-13 2004-06-14 A hybrid magnetic/electrostatic deflector for ion implantation systems

Publications (2)

Publication Number Publication Date
KR20060018240A KR20060018240A (ko) 2006-02-28
KR101157676B1 true KR101157676B1 (ko) 2012-07-03

Family

ID=33538973

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020057023293A Expired - Fee Related KR101157676B1 (ko) 2003-06-13 2004-06-14 이온 주입 시스템용 하이브리드 자기/정전 편향기

Country Status (7)

Country Link
US (1) US6881966B2 (enExample)
EP (1) EP1634316B1 (enExample)
JP (2) JP4650748B2 (enExample)
KR (1) KR101157676B1 (enExample)
CN (2) CN100592459C (enExample)
TW (1) TWI314337B (enExample)
WO (1) WO2004114354A2 (enExample)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4901094B2 (ja) * 2004-11-30 2012-03-21 株式会社Ｓｅｎ ビーム照射装置
JP4964413B2 (ja) * 2004-11-30 2012-06-27 株式会社Ｓｅｎ イオンビーム／荷電粒子ビーム照射装置
JP5042451B2 (ja) * 2004-11-30 2012-10-03 株式会社Ｓｅｎ ビーム空間電荷中和装置及びこれを備えたイオン注入装置
US7598505B2 (en) * 2005-03-08 2009-10-06 Axcelis Technologies, Inc. Multichannel ion gun
US7361913B2 (en) * 2005-04-02 2008-04-22 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for glitch recovery in stationary-beam ion implantation process using fast ion beam control
US7674687B2 (en) * 2005-07-27 2010-03-09 Silicon Genesis Corporation Method and structure for fabricating multiple tiled regions onto a plate using a controlled cleaving process
US7675047B2 (en) * 2005-11-15 2010-03-09 Varian Semiconductor Equipment Associates, Inc. Technique for shaping a ribbon-shaped ion beam
US7800082B2 (en) * 2006-02-15 2010-09-21 Varian Semiconductor Equipment Associates, Inc. Electromagnet with active field containment
US7863157B2 (en) * 2006-03-17 2011-01-04 Silicon Genesis Corporation Method and structure for fabricating solar cells using a layer transfer process
JP2009532918A (ja) 2006-04-05 2009-09-10 シリコン ジェネシス コーポレーション レイヤトランスファプロセスを使用する太陽電池の製造方法および構造
TWI435378B (zh) * 2006-04-26 2014-04-21 Axcelis Tech Inc 劑量均勻性校正方法
JP4828305B2 (ja) * 2006-05-30 2011-11-30 株式会社Ｓｅｎ 静電式ビーム偏向走査装置及びビーム偏向走査方法
US8153513B2 (en) * 2006-07-25 2012-04-10 Silicon Genesis Corporation Method and system for continuous large-area scanning implantation process
US7227160B1 (en) * 2006-09-13 2007-06-05 Axcelis Technologies, Inc. Systems and methods for beam angle adjustment in ion implanters
US7507978B2 (en) * 2006-09-29 2009-03-24 Axcelis Technologies, Inc. Beam line architecture for ion implanter
US7750320B2 (en) * 2006-12-22 2010-07-06 Axcelis Technologies, Inc. System and method for two-dimensional beam scan across a workpiece of an ion implanter
US7586111B2 (en) * 2007-07-31 2009-09-08 Axcelis Technologies, Inc. Ion implanter having combined hybrid and double mechanical scan architecture
US20090206275A1 (en) * 2007-10-03 2009-08-20 Silcon Genesis Corporation Accelerator particle beam apparatus and method for low contaminate processing
US20100065761A1 (en) * 2008-09-17 2010-03-18 Axcelis Technologies, Inc. Adjustable deflection optics for ion implantation
US9443698B2 (en) * 2008-10-06 2016-09-13 Axcelis Technologies, Inc. Hybrid scanning for ion implantation
US8466431B2 (en) * 2009-02-12 2013-06-18 Varian Semiconductor Equipment Associates, Inc. Techniques for improving extracted ion beam quality using high-transparency electrodes
US8232532B2 (en) * 2009-06-23 2012-07-31 Hitachi Global Storage Technologies Netherlands B.V. Off-axis ion milling device for manufacture of magnetic recording media and method for using the same
CN101838797B (zh) * 2009-12-18 2012-07-04 上海凯世通半导体有限公司 离子注入方法
JP5500500B2 (ja) * 2010-03-11 2014-05-21 日新イオン機器株式会社 非対称なアインツェルレンズを有するビーム偏向器を備えたイオン注入装置
US8816281B2 (en) * 2011-03-28 2014-08-26 Tokyo Electron Limited Ion energy analyzer and methods of manufacturing the same
CN102751155B (zh) * 2011-04-22 2015-02-11 上海凯世通半导体有限公司 束流传输系统及其传输方法
JP5800286B2 (ja) * 2012-03-09 2015-10-28 日新イオン機器株式会社 イオン注入装置
US20150228445A1 (en) * 2014-02-13 2015-08-13 Varian Semiconductor Equipment Associates, Inc. Method and apparatus for three dimensional ion implantation
US9455116B2 (en) 2014-04-30 2016-09-27 Axcells Technologies, Inc. Angular scanning using angular energy filter
CN105895486A (zh) * 2014-12-18 2016-08-24 北京中科信电子装备有限公司 一种带电粒子束流偏转磁场结构及应用该结构的离子注入机
CN106653533B (zh) * 2015-11-04 2018-08-14 北京中科信电子装备有限公司 一种带电粒子束流磁场聚焦结构及应用该结构的离子注入机
JP6854628B2 (ja) * 2016-11-10 2021-04-07 東京エレクトロン株式会社 プラズマ溶射装置及び溶射制御方法
TWI795448B (zh) 2017-10-09 2023-03-11 美商艾克塞利斯科技公司 用於在角能量過濾器區域中穩定或移除射束線組件上所形成之膜的離子植入系統及方法
WO2020055894A1 (en) * 2018-09-10 2020-03-19 Exogenesis Corporation Method and apparatus to eliminate contaminants from an accelerated neutral atom beam to protect a beam target
CN109473344B (zh) * 2018-11-13 2021-08-03 上海华力微电子有限公司 一种离子注入的方法及设备
CA3272244A1 (en) 2019-07-19 2025-10-30 Shine Technologies, Llc Gas jet deflection in pressurized systems
CN112799120B (zh) * 2019-11-13 2024-03-22 中国科学院国家空间科学中心 一种离子和电子同步测量的双通道静电分析器

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10302707A (ja) * 1997-04-25 1998-11-13 Nissin Electric Co Ltd イオン注入装置
JP2001126656A (ja) * 1999-10-25 2001-05-11 Nissin Electric Co Ltd イオン注入装置
WO2002052609A2 (en) * 2000-12-27 2002-07-04 Proteros, Llc Compact beamline and ion implanter system using same

Family Cites Families (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2412939A1 (fr) * 1977-12-23 1979-07-20 Anvar Implanteur d'ions a fort courant
US4737644A (en) * 1985-10-30 1988-04-12 International Business Machines Corporation Conductive coated semiconductor electrostatic deflection plates
JPH0731996B2 (ja) * 1985-11-14 1995-04-10 日新電機株式会社 イオン注入装置
JP2706471B2 (ja) * 1987-09-30 1998-01-28 日本真空技術株式会社 静電掃引型イオン注入機用平行掃引装置
DE68922929T2 (de) * 1988-03-23 1996-02-22 Fujitsu Ltd., Kawasaki, Kanagawa Photokathoden-Bildprojektionsapparat für die Mustergestaltung auf einer Halbleitervorrichtung.
JPH02260356A (ja) * 1989-03-31 1990-10-23 Ulvac Corp イオン注入装置における平行走査系
GB9005204D0 (en) * 1990-03-08 1990-05-02 Superion Ltd Apparatus and methods relating to scanning ion beams
US5132544A (en) * 1990-08-29 1992-07-21 Nissin Electric Company Ltd. System for irradiating a surface with atomic and molecular ions using two dimensional magnetic scanning
US5311028A (en) * 1990-08-29 1994-05-10 Nissin Electric Co., Ltd. System and method for producing oscillating magnetic fields in working gaps useful for irradiating a surface with atomic and molecular ions
JPH04171647A (ja) * 1990-11-05 1992-06-18 Nec Corp イオン注入装置
JPH04171648A (ja) * 1990-11-05 1992-06-18 Nec Corp イオン注入装置
US5206516A (en) * 1991-04-29 1993-04-27 International Business Machines Corporation Low energy, steered ion beam deposition system having high current at low pressure
JPH0547339A (ja) * 1991-08-21 1993-02-26 Nec Corp イオン注入装置
JP3448352B2 (ja) * 1994-07-07 2003-09-22 株式会社日立製作所 半導体装置の製造方法
JP3358336B2 (ja) * 1994-10-14 2002-12-16 日新電機株式会社 イオン注入装置における注入条件異常検出方法
US5468955A (en) * 1994-12-20 1995-11-21 International Business Machines Corporation Neutral beam apparatus for in-situ production of reactants and kinetic energy transfer
JPH08212965A (ja) * 1995-01-31 1996-08-20 Ulvac Japan Ltd イオン注入装置
GB2344214B (en) 1995-11-08 2000-08-09 Applied Materials Inc An ion implanter with improved beam definition
JPH09213250A (ja) * 1996-01-30 1997-08-15 Jeol Ltd 荷電粒子ビームの偏向装置
US5693939A (en) * 1996-07-03 1997-12-02 Purser; Kenneth H. MeV neutral beam ion implanter
JP3635818B2 (ja) * 1996-10-03 2005-04-06 日新電機株式会社 イオン注入装置
JPH10199460A (ja) * 1997-01-09 1998-07-31 Jeol Ltd 集束イオンビーム装置
US5780863A (en) 1997-04-29 1998-07-14 Eaton Corporation Accelerator-decelerator electrostatic lens for variably focusing and mass resolving an ion beam in an ion implanter
JP3449198B2 (ja) * 1997-10-22 2003-09-22 日新電機株式会社 イオン注入装置
JPH11176372A (ja) * 1997-12-11 1999-07-02 Ulvac Corp イオン照射装置
JPH11283552A (ja) * 1998-03-31 1999-10-15 Tadamoto Tamai イオン注入装置、イオン注入方法、イオンビーム源、及び可変スリット機構
GB9813327D0 (en) * 1998-06-19 1998-08-19 Superion Ltd Apparatus and method relating to charged particles
DE69916241T2 (de) 1998-09-24 2005-04-14 Koninklijke Philips Electronics N.V. Ionenimplantierungsvorrichtung gestaltet zur ausfilterung von neutralen ionen aus dem ionenstrahl und methode
US6441382B1 (en) 1999-05-21 2002-08-27 Axcelis Technologies, Inc. Deceleration electrode configuration for ultra-low energy ion implanter
US6635880B1 (en) * 1999-10-05 2003-10-21 Varian Semiconductor Equipment Associates, Inc. High transmission, low energy beamline architecture for ion implanter
US6313428B1 (en) * 1999-10-12 2001-11-06 Advanced Ion Beam Technology, Inc. Apparatus and method for reducing space charge of ion beams and wafer charging
US6521895B1 (en) 1999-10-22 2003-02-18 Varian Semiconductor Equipment Associates, Inc. Wide dynamic range ion beam scanners
US6946667B2 (en) 2000-03-01 2005-09-20 Advanced Ion Beam Technology, Inc. Apparatus to decelerate and control ion beams to improve the total quality of ion implantation
US6489622B1 (en) 2000-03-01 2002-12-03 Advanced Ion Beam Technology, Inc. Apparatus for decelerating ion beams with minimal energy contamination
US6414329B1 (en) * 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide
JP3869680B2 (ja) 2001-05-29 2007-01-17 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオン注入装置
JP3941434B2 (ja) * 2001-08-09 2007-07-04 日新イオン機器株式会社 イオン注入装置およびその運転方法
JP3738734B2 (ja) * 2002-02-06 2006-01-25 日新電機株式会社 静電加速管およびそれを備えるイオン注入装置
EP2800144A1 (en) * 2013-05-03 2014-11-05 Saint-Gobain Glass France Back contact substrate for a photovoltaic cell or module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10302707A (ja) * 1997-04-25 1998-11-13 Nissin Electric Co Ltd イオン注入装置
JP2001126656A (ja) * 1999-10-25 2001-05-11 Nissin Electric Co Ltd イオン注入装置
WO2002052609A2 (en) * 2000-12-27 2002-07-04 Proteros, Llc Compact beamline and ion implanter system using same

Also Published As

Publication number Publication date
EP1634316A2 (en) 2006-03-15
CN100592459C (zh) 2010-02-24
US20040227105A1 (en) 2004-11-18
JP4645965B2 (ja) 2011-03-09
JP2009117393A (ja) 2009-05-28
WO2004114354A2 (en) 2004-12-29
WO2004114354A3 (en) 2005-03-17
JP4650748B2 (ja) 2011-03-16
EP1634316B1 (en) 2011-11-23
US6881966B2 (en) 2005-04-19
KR20060018240A (ko) 2006-02-28
TW200503042A (en) 2005-01-16
CN101777481A (zh) 2010-07-14
JP2007517358A (ja) 2007-06-28
CN1806309A (zh) 2006-07-19
CN101777481B (zh) 2012-06-27
TWI314337B (en) 2009-09-01

Similar Documents

Publication Publication Date Title
KR101157676B1 (ko) 이온 주입 시스템용 하이브리드 자기/정전 편향기
US6777696B1 (en) Deflecting acceleration/deceleration gap
JP5689415B2 (ja) イオン注入システムにおけるディセル後の磁気エネルギーフィルター
US6998625B1 (en) Ion implanter having two-stage deceleration beamline
US6489622B1 (en) Apparatus for decelerating ion beams with minimal energy contamination
JP2007516578A (ja) 低エネルギーイオンビーム伝送を改良したイオン注入装置
JP4831419B2 (ja) イオン注入システムにおいてプラズマを発生させるための薄膜形成用マグネトロン構造
JP2004508667A (ja) イオンビームの流れに乗った粒子の静電捕捉システム
US7022984B1 (en) Biased electrostatic deflector
JP4793696B2 (ja) イオン注入システムにおいて引き出されたイオンビームの選択的プレディスパージョンのための方法及び装置
KR20060090672A (ko) 질량 분리를 갖는 이온 빔 슬릿 추출
KR20120049883A (ko) 조절 가능한 루버드된 플라즈마 일렉트론 플루드 외피
US7459692B2 (en) Electron confinement inside magnet of ion implanter

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E601 Decision to refuse application
PE0601 Decision on rejection of patent

St.27 status event code: N-2-6-B10-B15-exm-PE0601

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

AMND Amendment
E13-X000 Pre-grant limitation requested

St.27 status event code: A-2-3-E10-E13-lim-X000

J201 Request for trial against refusal decision
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PJ0201 Trial against decision of rejection

St.27 status event code: A-3-3-V10-V11-apl-PJ0201

PB0901 Examination by re-examination before a trial

St.27 status event code: A-6-3-E10-E12-rex-PB0901

B701 Decision to grant
PB0701 Decision of registration after re-examination before a trial

St.27 status event code: A-3-4-F10-F13-rex-PB0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20160330

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20170330

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20180329

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20190327

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20240613

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20240613