JP2007514306A - 被処理物を受けるための支持体及び支持体の製造方法 - Google Patents
被処理物を受けるための支持体及び支持体の製造方法 Download PDFInfo
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- JP2007514306A JP2007514306A JP2006543450A JP2006543450A JP2007514306A JP 2007514306 A JP2007514306 A JP 2007514306A JP 2006543450 A JP2006543450 A JP 2006543450A JP 2006543450 A JP2006543450 A JP 2006543450A JP 2007514306 A JP2007514306 A JP 2007514306A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/249921—Web or sheet containing structurally defined element or component
- Y10T428/249924—Noninterengaged fiber-containing paper-free web or sheet which is not of specified porosity
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
【選択図】 図1
Description
特に支持体は気相浸透及び/又は液体含浸により安定化されている。その場合骨格はフェルト、不織布及び/又は織物層からなることができる。
即ち
−炭素及び/又は炭化ケイ素で骨格を作り、
−基質をなす少なくとも1つの熱分解炭素及び/又は炭化ケイ素層で骨格を安定化し、
こうして安定化された骨格又は骨格の断片を支持体として使用することを特徴とする。
Claims (19)
- 炭素を含み、ガス出口又は通過口を形成するために多孔質に形成されている、被処理物、例えば半導体部品の基板を受けるための支持体(10)において、支持体(10)が炭素繊維及び/又は炭化ケイ素繊維(18、20)の骨格又は骨格断片からなり、繊維が炭素及び/又は炭化ケイ素基質に埋め込まれており、支持体が5%≦p≦95%の有孔率p及び0.1g/cm3≦ρ≦3.0g/cm3の密度ρを有することを特徴とする支持体。
- 骨格がカーボンフェルト、不織布及び/又は織物層からなることを特徴とする請求項1に記載の支持体。
- 繊維(18、20)が基質として単数又は複数の炭素層、例えば熱分解炭素層及び/又は炭化ケイ素層(26、28)を備えていることを特徴とする請求項1に記載の支持体。
- 基質が外側に炭化ケイ素層を有することを特徴とする上記請求項の少なくとも1つに記載の支持体。
- 基質が炭素から炭化ケイ素へ段階的に移行する層系を有することを特徴とする上記請求項の少なくとも1つに記載の支持体。
- 支持体(10)の熱伝導率wが0.10W/mK≦w≦100W/mK、特に3W/mK≦w≦30W/mKであることを特徴とする上記請求項の少なくとも1つに記載の支持体。
- 支持体が1.50g/cm3から1.9g/cm3までの範囲の総密度を有し、そのうち繊維分が0.098g/cm3から0.2g/cm3までの範囲、及び/又は熱分解炭素分が0.4g/cm3から0.8g/cm3までの範囲、及び/又はSiC分が0.8g/cm3から1.0g/cm3までの範囲にあることを特徴とする上記請求項の少なくとも1つに記載の支持体。
- 骨格と基質の重量比が約1:13から1:17までの範囲にあることを特徴とする上記請求項の少なくとも1つに記載の支持体。
- ガス出口又は通過口を形成する多孔質の炭素を使用して支持体を形成する、被処理物、とりわけ半導体部品の基板例えばウエハを受けるための支持体の製造方法において、次の手順
即ち
−炭素及び/又は炭化ケイ素繊維で骨格を作り、
−基質をなす少なくとも1つの熱分解炭素及び/又は炭化ケイ素層で骨格を安定化し、
こうして安定化した骨格又は骨格断片を支持体として使用することを特徴とする方法。 - 繊維を気相浸透(CVI)及び/又は液体含浸により安定化することを特徴とする請求項9に記載の方法。
- 骨格として、安定化したフェルト又は不織布又は安定化した織物層を使用することを特徴とする請求項9又は10に記載の方法。
- 繊維をもっぱら炭素により、又はもっぱら炭化ケイ素により安定化することを特徴とする請求項9ないし11の少なくとも1つに記載の方法。
- 炭素及び/又は炭化ケイ素からなる単数又は複数の層の層列で繊維を安定化することを特徴とする請求項9ないし12の少なくとも1つに記載の方法。
- 炭素から炭化ケイ素へ移行する段階的な層系で繊維を安定化することを特徴とする請求項9ないし13の少なくとも1つに記載の方法。
- 外層として炭化ケイ素層が形成されるようにして、骨格を安定化することを特徴とする請求項9ないし14の少なくとも1つに記載の方法。
- 骨格の組成及び/又は気相浸透又は液体含浸の持続時間によって、支持体の密度、熱伝導率及び/又は有孔率を調整することを特徴とする請求項9ないし15の少なくとも1つに記載の方法。
- 支持体を5%≦p≦95%、特に10%≦p≦95%の有孔率pに調整することを特徴とする少なくとも請求項9に記載の方法。
- 支持体を0.1g/cm3≦ρ≦3.0g/cm3の密度ρに調整することを特徴とする少なくとも請求項9に記載の方法。
- 下記の手順、
即ち
−熱分解炭素からなる単数又は複数の層を炭素及び/又は炭化ケイ素繊維からなる骨格に被着し、
−被覆された骨格から支持体を切り取り、
−切り取った支持体を高温清浄化し、
−炭化ケイ素からなる単数又は複数の層を、熱分解炭素で被覆された骨格に被着する
ことを特徴とする請求項9ないし17の少なくとも1つに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE10357698.3 | 2003-12-09 | ||
DE2003157698 DE10357698A1 (de) | 2003-12-09 | 2003-12-09 | Träger für zu behandelnde Gegenstände sowie Verfahren zur Herstellung eines solchen |
PCT/EP2004/013838 WO2005059992A1 (de) | 2003-12-09 | 2004-12-06 | Träger zur aufnahme eines gegenstandes sowie verfahren zur herstellung eines trägers |
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JP2007514306A true JP2007514306A (ja) | 2007-05-31 |
JP2007514306A5 JP2007514306A5 (ja) | 2008-01-24 |
JP5052137B2 JP5052137B2 (ja) | 2012-10-17 |
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JP2006543450A Active JP5052137B2 (ja) | 2003-12-09 | 2004-12-06 | 被処理物を受けるための支持体及び支持体の製造方法 |
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US (1) | US7919143B2 (ja) |
EP (1) | EP1692718B1 (ja) |
JP (1) | JP5052137B2 (ja) |
KR (1) | KR101148897B1 (ja) |
CN (1) | CN100446213C (ja) |
DE (2) | DE10357698A1 (ja) |
TW (1) | TWI442508B (ja) |
WO (1) | WO2005059992A1 (ja) |
Cited By (3)
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JP2006173631A (ja) * | 2004-12-16 | 2006-06-29 | Siltronic Ag | 被覆された半導体ウェハ及び半導体ウェハを製造する方法及び装置 |
JP2016535430A (ja) * | 2013-09-26 | 2016-11-10 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 炭素繊維リングサセプタ |
JP2022541373A (ja) * | 2019-06-06 | 2022-09-26 | ピコサン オーワイ | 多孔質インレット |
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- 2004-12-06 CN CNB2004800367829A patent/CN100446213C/zh active Active
- 2004-12-06 JP JP2006543450A patent/JP5052137B2/ja active Active
- 2004-12-06 DE DE200450003727 patent/DE502004003727D1/de active Active
- 2004-12-06 EP EP04820417A patent/EP1692718B1/de active Active
- 2004-12-06 WO PCT/EP2004/013838 patent/WO2005059992A1/de active IP Right Grant
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006173631A (ja) * | 2004-12-16 | 2006-06-29 | Siltronic Ag | 被覆された半導体ウェハ及び半導体ウェハを製造する方法及び装置 |
JP2016535430A (ja) * | 2013-09-26 | 2016-11-10 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 炭素繊維リングサセプタ |
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Also Published As
Publication number | Publication date |
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US20070110975A1 (en) | 2007-05-17 |
EP1692718B1 (de) | 2007-05-02 |
KR20060126536A (ko) | 2006-12-07 |
DE10357698A1 (de) | 2005-07-14 |
EP1692718A1 (de) | 2006-08-23 |
WO2005059992A1 (de) | 2005-06-30 |
CN100446213C (zh) | 2008-12-24 |
JP5052137B2 (ja) | 2012-10-17 |
DE502004003727D1 (de) | 2007-06-14 |
TW200525686A (en) | 2005-08-01 |
KR101148897B1 (ko) | 2012-05-29 |
US7919143B2 (en) | 2011-04-05 |
CN1890792A (zh) | 2007-01-03 |
TWI442508B (zh) | 2014-06-21 |
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