JP2007514185A - レジスト内でのパーツのサイズ変動 - Google Patents

レジスト内でのパーツのサイズ変動 Download PDF

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Publication number
JP2007514185A
JP2007514185A JP2006539748A JP2006539748A JP2007514185A JP 2007514185 A JP2007514185 A JP 2007514185A JP 2006539748 A JP2006539748 A JP 2006539748A JP 2006539748 A JP2006539748 A JP 2006539748A JP 2007514185 A JP2007514185 A JP 2007514185A
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JP
Japan
Prior art keywords
pattern
substrate
providing
aperture
size
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Pending
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JP2006539748A
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English (en)
Japanese (ja)
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JP2007514185A5 (enExample
Inventor
ファビンスキ，ロバート，ピエール
スンマ，ジョーゼフ，アール
Original Assignee
イーストマン コダック カンパニー
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Application filed by イーストマン コダック カンパニー filed Critical イーストマン コダック カンパニー
Publication of JP2007514185A publication Critical patent/JP2007514185A/ja
Publication of JP2007514185A5 publication Critical patent/JP2007514185A5/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
    • G03F7/203—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure comprising an imagewise exposure to electromagnetic radiation or corpuscular radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Electromagnetism (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2006539748A 2003-11-12 2004-11-09 レジスト内でのパーツのサイズ変動 Pending JP2007514185A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/706,200 US6870168B1 (en) 2003-11-12 2003-11-12 Varying feature size in resist across the chip without the artifact of “grid-snapping” from the mask writing tool
PCT/US2004/037354 WO2005047976A2 (en) 2003-11-12 2004-11-09 Varying feature size in resist

Publications (2)

Publication Number Publication Date
JP2007514185A true JP2007514185A (ja) 2007-05-31
JP2007514185A5 JP2007514185A5 (enExample) 2007-11-29

Family

ID=34274830

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006539748A Pending JP2007514185A (ja) 2003-11-12 2004-11-09 レジスト内でのパーツのサイズ変動

Country Status (5)

Country Link
US (1) US6870168B1 (enExample)
EP (1) EP1682941B1 (enExample)
JP (1) JP2007514185A (enExample)
DE (1) DE602004014013D1 (enExample)
WO (1) WO2005047976A2 (enExample)

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102738A (ja) * 1984-10-26 1986-05-21 Fujitsu Ltd レジスト膜パタ−ンの形成方法
JPH01258419A (ja) * 1988-04-08 1989-10-16 Hitachi Ltd パターン形成方法
JP2000114156A (ja) * 1998-10-09 2000-04-21 Toshiba Corp 露光装置および露光方法
JP2000133563A (ja) * 1998-10-22 2000-05-12 Nikon Corp 露光方法及び露光装置
JP2002204389A (ja) * 2000-11-07 2002-07-19 Eastman Kodak Co 露出制御方法
JP2003524347A (ja) * 2000-02-23 2003-08-12 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 高ダイナミックレンジ画像を獲得する方法及び装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4538105A (en) * 1981-12-07 1985-08-27 The Perkin-Elmer Corporation Overlay test wafer
US5103101A (en) 1991-03-04 1992-04-07 Etec Systems, Inc. Multiphase printing for E-beam lithography
US5773836A (en) 1996-10-28 1998-06-30 International Business Machines Corporation Method for correcting placement errors in a lithography system
US5905020A (en) 1996-12-20 1999-05-18 Intel Corporation Method and apparatus for reducing the critical dimension difference of features printed on a substrate
US6278123B1 (en) 1999-04-07 2001-08-21 Intel Corporation Reducing the critical dimension difference of features printed on a substrate
JP3635979B2 (ja) * 1999-04-09 2005-04-06 セイコーエプソン株式会社 照明光学系および投写型表示装置
US6335151B1 (en) * 1999-06-18 2002-01-01 International Business Machines Corporation Micro-surface fabrication process
US6331711B1 (en) 1999-08-06 2001-12-18 Etec Systems, Inc. Correction for systematic, low spatial frequency critical dimension variations in lithography
US6322934B1 (en) * 1999-09-30 2001-11-27 Lucent Technologies Inc. Method for making integrated circuits including features with a relatively small critical dimension
US20020045105A1 (en) * 2000-07-05 2002-04-18 Brown David R. High quality lithographic processing
TWI237849B (en) * 2001-11-19 2005-08-11 Nanya Technology Corp Method of utilizing multi-exposure to form isolated lines

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102738A (ja) * 1984-10-26 1986-05-21 Fujitsu Ltd レジスト膜パタ−ンの形成方法
JPH01258419A (ja) * 1988-04-08 1989-10-16 Hitachi Ltd パターン形成方法
JP2000114156A (ja) * 1998-10-09 2000-04-21 Toshiba Corp 露光装置および露光方法
JP2000133563A (ja) * 1998-10-22 2000-05-12 Nikon Corp 露光方法及び露光装置
JP2003524347A (ja) * 2000-02-23 2003-08-12 ザ トラスティーズ オブ コロンビア ユニヴァーシティ イン ザ シティ オブ ニューヨーク 高ダイナミックレンジ画像を獲得する方法及び装置
JP2002204389A (ja) * 2000-11-07 2002-07-19 Eastman Kodak Co 露出制御方法

Also Published As

Publication number Publication date
EP1682941A2 (en) 2006-07-26
DE602004014013D1 (de) 2008-07-03
WO2005047976A3 (en) 2006-03-30
WO2005047976A2 (en) 2005-05-26
EP1682941B1 (en) 2008-05-21
US6870168B1 (en) 2005-03-22

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