JP2007507895A5 - - Google Patents

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Publication number
JP2007507895A5
JP2007507895A5 JP2006533962A JP2006533962A JP2007507895A5 JP 2007507895 A5 JP2007507895 A5 JP 2007507895A5 JP 2006533962 A JP2006533962 A JP 2006533962A JP 2006533962 A JP2006533962 A JP 2006533962A JP 2007507895 A5 JP2007507895 A5 JP 2007507895A5
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JP
Japan
Prior art keywords
electrolyte
light
semiconductor material
substrate
layer
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Application number
JP2006533962A
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English (en)
Japanese (ja)
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JP5748384B2 (ja
JP2007507895A (ja
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Priority claimed from US10/676,953 external-priority patent/US6972438B2/en
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Publication of JP2007507895A publication Critical patent/JP2007507895A/ja
Publication of JP2007507895A5 publication Critical patent/JP2007507895A5/ja
Application granted granted Critical
Publication of JP5748384B2 publication Critical patent/JP5748384B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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JP2006533962A 2003-09-30 2004-09-21 多孔質ＳｉＣ基板を有する発光ダイオードおよび製造方法 Expired - Lifetime JP5748384B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10/676,953 2003-09-30
US10/676,953 US6972438B2 (en) 2003-09-30 2003-09-30 Light emitting diode with porous SiC substrate and method for fabricating
PCT/US2004/031050 WO2005034254A1 (en) 2003-09-30 2004-09-21 Light emitting diode with porous sic substrate and method for fabricating

Publications (3)

Publication Number Publication Date
JP2007507895A JP2007507895A (ja) 2007-03-29
JP2007507895A5 true JP2007507895A5 (enExample) 2007-11-08
JP5748384B2 JP5748384B2 (ja) 2015-07-15

Family

ID=34422124

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006533962A Expired - Lifetime JP5748384B2 (ja) 2003-09-30 2004-09-21 多孔質ＳｉＣ基板を有する発光ダイオードおよび製造方法

Country Status (8)

Country Link
US (1) US6972438B2 (enExample)
EP (1) EP1668710B1 (enExample)
JP (1) JP5748384B2 (enExample)
KR (1) KR20060090813A (enExample)
CN (1) CN100470854C (enExample)
CA (1) CA2536154A1 (enExample)
TW (1) TW200518355A (enExample)
WO (1) WO2005034254A1 (enExample)

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US7829358B2 (en) 2008-02-08 2010-11-09 Illumitex, Inc. System and method for emitter layer shaping
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TW201034256A (en) 2008-12-11 2010-09-16 Illumitex Inc Systems and methods for packaging light-emitting diode devices
JP5330880B2 (ja) * 2009-03-27 2013-10-30 学校法人 名城大学 発光ダイオード素子及びその製造方法
US8476668B2 (en) 2009-04-06 2013-07-02 Cree, Inc. High voltage low current surface emitting LED
US9093293B2 (en) 2009-04-06 2015-07-28 Cree, Inc. High voltage low current surface emitting light emitting diode
US8585253B2 (en) 2009-08-20 2013-11-19 Illumitex, Inc. System and method for color mixing lens array
US8449128B2 (en) 2009-08-20 2013-05-28 Illumitex, Inc. System and method for a lens and phosphor layer
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US8329482B2 (en) 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US8455882B2 (en) 2010-10-15 2013-06-04 Cree, Inc. High efficiency LEDs
US9172018B2 (en) * 2010-11-19 2015-10-27 Koninklijke Philips N.V. Islanded carrier for light emitting device
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CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
US9299899B2 (en) 2013-07-23 2016-03-29 Grote Industries, Llc Flexible lighting device having unobtrusive conductive layers
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CN107078190B (zh) 2014-09-30 2020-09-08 耶鲁大学 用于GaN垂直微腔面发射激光器(VCSEL)的方法
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CN109564850A (zh) 2016-08-12 2019-04-02 耶鲁大学 通过在生长期间消除氮极性小面而在异质衬底上生长的无堆垛层错的半极性和非极性gan
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