WO2009038324A3 - Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof - Google Patents
Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof Download PDFInfo
- Publication number
- WO2009038324A3 WO2009038324A3 PCT/KR2008/005464 KR2008005464W WO2009038324A3 WO 2009038324 A3 WO2009038324 A3 WO 2009038324A3 KR 2008005464 W KR2008005464 W KR 2008005464W WO 2009038324 A3 WO2009038324 A3 WO 2009038324A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- porous structure
- semiconductor
- manufacturing
- semiconductor layer
- light
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000003086 colorant Substances 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000000605 extraction Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 230000002093 peripheral effect Effects 0.000 abstract 1
- 238000003631 wet chemical etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Led Devices (AREA)
Abstract
A semiconductor structure, device, and method of manufacturing the same are provided. The manufacturing method includes etching a substrate or the surface of a semiconductor layer formed on the substrate using a wet chemical etching method or a wet photoelectrochemical etching method to form a porous structure, and re-forming a desired semiconductor layer on the porous structure, so that reduced defect density of the re-formed semiconductor layer enables the porous structure to have improved performance and characteristics. Also, the method includes forming a porous structure on a semiconductor emission layer to increase light extraction efficiency of the semiconductor emission layer, and combining a fluorescent or light-emitting material with an internal or peripheral part of the formed porous structure to efficiently emit various colors of light.
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20070094991 | 2007-09-18 | ||
KR10-2007-0094991 | 2007-09-18 | ||
KR10-2007-0106761 | 2007-10-23 | ||
KR1020070106761A KR100946213B1 (en) | 2007-09-18 | 2007-10-23 | Porous semiconductor structure and semiconductor device and manufacturing method thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2009038324A2 WO2009038324A2 (en) | 2009-03-26 |
WO2009038324A3 true WO2009038324A3 (en) | 2009-05-14 |
Family
ID=40468584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2008/005464 WO2009038324A2 (en) | 2007-09-18 | 2008-09-17 | Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof |
Country Status (1)
Country | Link |
---|---|
WO (1) | WO2009038324A2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102130220A (en) * | 2010-01-13 | 2011-07-20 | 晶元光电股份有限公司 | Photoelectric semiconductor device and manufacturing method thereof |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7928448B2 (en) | 2007-12-04 | 2011-04-19 | Philips Lumileds Lighting Company, Llc | III-nitride light emitting device including porous semiconductor layer |
WO2010112980A1 (en) * | 2009-04-02 | 2010-10-07 | Philips Lumileds Lighting Company, Llc | Iii-nitride light emitting device including porous semiconductor layer |
US9012253B2 (en) | 2009-12-16 | 2015-04-21 | Micron Technology, Inc. | Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods |
KR101038923B1 (en) * | 2010-02-02 | 2011-06-03 | 전북대학교산학협력단 | Light emitting diode having improved light emission efficiency and method for fabricating the same |
WO2021148808A1 (en) * | 2020-01-22 | 2021-07-29 | Poro Technologies Ltd | Red led and method of manufacture |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0846245A (en) * | 1994-07-27 | 1996-02-16 | Sharp Corp | Forming method of porous silicon light-emitting layer |
JP2002050586A (en) * | 2000-08-03 | 2002-02-15 | Hitachi Cable Ltd | Method for manufacturing semiconductor crystal |
JP2003046199A (en) * | 2001-07-27 | 2003-02-14 | Canon Inc | Method for manufacturing ii-vi group device using porous film and its structure |
KR100695117B1 (en) * | 2005-10-25 | 2007-03-14 | 삼성코닝 주식회사 | Fabrication method of gan |
-
2008
- 2008-09-17 WO PCT/KR2008/005464 patent/WO2009038324A2/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0846245A (en) * | 1994-07-27 | 1996-02-16 | Sharp Corp | Forming method of porous silicon light-emitting layer |
JP2002050586A (en) * | 2000-08-03 | 2002-02-15 | Hitachi Cable Ltd | Method for manufacturing semiconductor crystal |
JP2003046199A (en) * | 2001-07-27 | 2003-02-14 | Canon Inc | Method for manufacturing ii-vi group device using porous film and its structure |
KR100695117B1 (en) * | 2005-10-25 | 2007-03-14 | 삼성코닝 주식회사 | Fabrication method of gan |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102130220A (en) * | 2010-01-13 | 2011-07-20 | 晶元光电股份有限公司 | Photoelectric semiconductor device and manufacturing method thereof |
CN102130220B (en) * | 2010-01-13 | 2014-12-10 | 晶元光电股份有限公司 | Photoelectric semiconductor device and manufacturing method thereof |
Also Published As
Publication number | Publication date |
---|---|
WO2009038324A2 (en) | 2009-03-26 |
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