WO2009038324A3 - Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof - Google Patents

Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof Download PDF

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Publication number
WO2009038324A3
WO2009038324A3 PCT/KR2008/005464 KR2008005464W WO2009038324A3 WO 2009038324 A3 WO2009038324 A3 WO 2009038324A3 KR 2008005464 W KR2008005464 W KR 2008005464W WO 2009038324 A3 WO2009038324 A3 WO 2009038324A3
Authority
WO
WIPO (PCT)
Prior art keywords
porous structure
semiconductor
manufacturing
semiconductor layer
light
Prior art date
Application number
PCT/KR2008/005464
Other languages
French (fr)
Other versions
WO2009038324A2 (en
Inventor
Yong Hoon Cho
Original Assignee
Nat Univ Chungbuk Ind Acad
Korea Advanced Inst Sci & Tech
Yong Hoon Cho
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070106761A external-priority patent/KR100946213B1/en
Application filed by Nat Univ Chungbuk Ind Acad, Korea Advanced Inst Sci & Tech, Yong Hoon Cho filed Critical Nat Univ Chungbuk Ind Acad
Publication of WO2009038324A2 publication Critical patent/WO2009038324A2/en
Publication of WO2009038324A3 publication Critical patent/WO2009038324A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Led Devices (AREA)

Abstract

A semiconductor structure, device, and method of manufacturing the same are provided. The manufacturing method includes etching a substrate or the surface of a semiconductor layer formed on the substrate using a wet chemical etching method or a wet photoelectrochemical etching method to form a porous structure, and re-forming a desired semiconductor layer on the porous structure, so that reduced defect density of the re-formed semiconductor layer enables the porous structure to have improved performance and characteristics. Also, the method includes forming a porous structure on a semiconductor emission layer to increase light extraction efficiency of the semiconductor emission layer, and combining a fluorescent or light-emitting material with an internal or peripheral part of the formed porous structure to efficiently emit various colors of light.
PCT/KR2008/005464 2007-09-18 2008-09-17 Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof WO2009038324A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR20070094991 2007-09-18
KR10-2007-0094991 2007-09-18
KR10-2007-0106761 2007-10-23
KR1020070106761A KR100946213B1 (en) 2007-09-18 2007-10-23 Porous semiconductor structure and semiconductor device and manufacturing method thereof

Publications (2)

Publication Number Publication Date
WO2009038324A2 WO2009038324A2 (en) 2009-03-26
WO2009038324A3 true WO2009038324A3 (en) 2009-05-14

Family

ID=40468584

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/005464 WO2009038324A2 (en) 2007-09-18 2008-09-17 Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof

Country Status (1)

Country Link
WO (1) WO2009038324A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130220A (en) * 2010-01-13 2011-07-20 晶元光电股份有限公司 Photoelectric semiconductor device and manufacturing method thereof

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7928448B2 (en) 2007-12-04 2011-04-19 Philips Lumileds Lighting Company, Llc III-nitride light emitting device including porous semiconductor layer
WO2010112980A1 (en) * 2009-04-02 2010-10-07 Philips Lumileds Lighting Company, Llc Iii-nitride light emitting device including porous semiconductor layer
US9012253B2 (en) 2009-12-16 2015-04-21 Micron Technology, Inc. Gallium nitride wafer substrate for solid state lighting devices, and associated systems and methods
KR101038923B1 (en) * 2010-02-02 2011-06-03 전북대학교산학협력단 Light emitting diode having improved light emission efficiency and method for fabricating the same
WO2021148808A1 (en) * 2020-01-22 2021-07-29 Poro Technologies Ltd Red led and method of manufacture

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0846245A (en) * 1994-07-27 1996-02-16 Sharp Corp Forming method of porous silicon light-emitting layer
JP2002050586A (en) * 2000-08-03 2002-02-15 Hitachi Cable Ltd Method for manufacturing semiconductor crystal
JP2003046199A (en) * 2001-07-27 2003-02-14 Canon Inc Method for manufacturing ii-vi group device using porous film and its structure
KR100695117B1 (en) * 2005-10-25 2007-03-14 삼성코닝 주식회사 Fabrication method of gan

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0846245A (en) * 1994-07-27 1996-02-16 Sharp Corp Forming method of porous silicon light-emitting layer
JP2002050586A (en) * 2000-08-03 2002-02-15 Hitachi Cable Ltd Method for manufacturing semiconductor crystal
JP2003046199A (en) * 2001-07-27 2003-02-14 Canon Inc Method for manufacturing ii-vi group device using porous film and its structure
KR100695117B1 (en) * 2005-10-25 2007-03-14 삼성코닝 주식회사 Fabrication method of gan

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102130220A (en) * 2010-01-13 2011-07-20 晶元光电股份有限公司 Photoelectric semiconductor device and manufacturing method thereof
CN102130220B (en) * 2010-01-13 2014-12-10 晶元光电股份有限公司 Photoelectric semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
WO2009038324A2 (en) 2009-03-26

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