CN102130220B - Photoelectric semiconductor device and manufacturing method thereof - Google Patents
Photoelectric semiconductor device and manufacturing method thereof Download PDFInfo
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- CN102130220B CN102130220B CN201010002187.0A CN201010002187A CN102130220B CN 102130220 B CN102130220 B CN 102130220B CN 201010002187 A CN201010002187 A CN 201010002187A CN 102130220 B CN102130220 B CN 102130220B
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Abstract
The invention discloses a photoelectric semiconductor device and a manufacturing method thereof. The photoelectric semiconductor device comprises a carrier and a photoelectric conversion structure, and a cavern structure is formed inside the photoelectric semiconductor device to ensure that the advancing direction of light emitted by the photoelectric conversion structure is changed in the cavern structure to be far away from the carrier and face the normal direction of the carrier.
Description
Technical field
The present invention relates to a kind of opto-semiconductor device and manufacture method thereof, particularly relate to a kind of opto-semiconductor device that there is pore space structure and go out to promote front light effect.
Background technology
Along with scientific and technological development, in life, the application of electronic product is more for extensively, towards more frivolous trend development.Wherein, if the function that has illumination in electronic product or show, selecting of light source will directly affect the size of product and the performance of brightness and demonstration.Due to light-emitting diode (light emitting diode, LED) have that volume is little, reaction speed is fast, low power consuming, reliability is high, colour gamut selectivity is high, environmental protection is without advantages such as mercury, has been widely used in the multiple use such as backlight of illumination, billboard and display.
Known light-emitting diode conventionally comprise substrate, N-shaped semiconductor layer, p-type semiconductor layer and be positioned at N-shaped semiconductor layer and p-type semiconductor layer between luminescent layer.Its principle of luminosity is that under suitable forward bias, luminescent layer is injected respectively in electronics and hole from N-shaped semiconductor layer and p-type semiconductor layer, and after combination, with the form of light, energy is discharged in luminescent layer.Thus, as long as provide respectively electronics and hole constantly from N-shaped semiconductor layer and p-type semiconductor layer, make the combination in its electronics and hole and luminous action continues to carry out, just can make the luminescent layer of light-emitting diode lasting luminous.
Most business-like light-emitting diodes are made up of three or five family's semiconductors, and wherein, the light-emitting diode that comprises nitride can send blue light or green glow, is often called as iii-nitride light emitting devices.The fluorescent material that it is suitable that the blue light that iii-nitride light emitting devices sends is arranged in pairs or groups can be modulated white light.But the light that luminescent layer is given birth to is isotropism (isotropy) transmitting, it is difficult for presenting the light field (light field) of collimation (collimation) or anisotropy (anisotropy) in essence.Therefore, how to provide one of subject of development that various light field become present stage light-emitting diode.
Summary of the invention
The object of the present invention is to provide a kind of opto-semiconductor device and manufacture method thereof, in technique, in opto-semiconductor device, form pore space structure, make the normal direction of its trend carrier to change light direction of advance, and then increase the amount of light of forward.
Another object of the present invention is to provide a kind of opto-semiconductor device and manufacture method thereof, pore space structure in opto-semiconductor device forms the air lens with optical scattering effect, preferably, for example be arranged in Fresnel lens (Fresnel lens), to increase forward amount of light.Opto-semiconductor device of the present invention can be according to the size of light-emitting diode, make the collocation of difform pore space structure, advance towards the normal direction of carrier as much as possible to impel light, reduce the loss that light produces between opto-semiconductor device and carrier, and then improve light extraction efficiency (light extraction efficiency).
For reaching above-mentioned purpose, the present invention discloses a kind of opto-semiconductor device, it comprises carrier, be arranged at the opto-electronic conversion structure on carrier, and at least one inner surface, carrier is definable normal direction on the face of opto-electronic conversion structure, at least one inner surface is formed in opto-semiconductor device, to define at least one pore space structure, and at least one pore space structure has refractive index, in the time that opto-electronic conversion structure can be carried out opto-electronic conversion and launch ray cast at least one pore space structure, light is suitable can be reflected in response to the refractive index of at least one pore space structure, and to advance away from carrier and trend normal direction.
The present invention more discloses a kind of method of manufacturing above-mentioned opto-semiconductor device, comprises the following step: carrier (a) is provided, and defines normal direction on the outer surface of carrier; (b) nitride layer of formation patterning, it has at least one inner surface, does not extend along normal direction; (c) form opto-electronic conversion structure on carrier; And (d) form at least one pore space structure in opto-semiconductor device, wherein, at least one pore space structure has refractive index, can reflect the light of photoelectricity transformational structure transmitting.
The present invention more discloses the another kind of method of manufacturing above-mentioned opto-semiconductor device, comprises the following step: (a) provide carrier; (b) extension forms opto-electronic conversion structure on carrier; (c) etching opto-electronic conversion structure is to form at least always perforation; And (d) at least one through hole, local anisotropy etching opto-semiconductor device.
For above-mentioned purpose, technical characterictic and advantage can be become apparent, below coordinate accompanying drawing to be elaborated with preferred embodiment.
Brief description of the drawings
Figure 1A is the vertical view of the opto-semiconductor device of first embodiment of the invention;
Figure 1B is that the opto-semiconductor device of first embodiment of the invention is along the generalized section along B-B ' hatching of Figure 1A;
The opto-semiconductor device that Fig. 1 C and Fig. 1 D are first embodiment of the invention is along the generalized section along C-C ' hatching of Figure 1A;
Fig. 2 A is the generalized section of the opto-semiconductor device of second embodiment of the invention;
Fig. 2 B～2E is the schematic diagram of the pore space structure in the opto-semiconductor device of second embodiment of the invention;
Fig. 3 A～3H is in fourth embodiment of the invention, the process schematic representation of opto-semiconductor device; And
Fig. 4 A～4G is in fifth embodiment of the invention, the process schematic representation of opto-semiconductor device.
Description of reference numerals
1: opto-semiconductor device 11: carrier
13: opto-electronic conversion structure 130: silicon dioxide layer
131:n type nitride layer 132: photoresist layer
133: multiple quantum trap 134: resistant layer
135:p type nitride layer 15: pore space structure
151: run through 17: resilient coating
19: transparent electrode layer 21:p type electrode
211:p type extension electrode 23:n type electrode
Embodiment
Below will explain opto-semiconductor device of the present invention through several embodiment, but, be only explaination the present invention about the explanation of embodiment, but not in order to limit the present invention.
Please refer to Figure 1A～1D, the first embodiment of the present invention discloses a kind of opto-semiconductor device, wherein, Figure 1A is the plan view from above of opto-semiconductor device 1, Figure 1B be the opto-semiconductor device 1 of Figure 1A along the generalized section of B-B ' hatching, and the opto-semiconductor device 1 that Fig. 1 C and Fig. 1 D are Figure 1A is along the generalized section of C-C ' hatching.
The opto-semiconductor device 1 of the present embodiment comprises carrier 11 and opto-electronic conversion structure 13.Preferably, carrier 11 is sapphire (Sapphire) substrate, and it is towards a side definable normal direction N of opto-electronic conversion structure 13.Opto-electronic conversion structure 13 is light-emitting diode, is arranged on carrier 11.In detail, opto-electronic conversion structure 13 comprises N-shaped nitride layer (n-nitride layer) 131, multiple quantum trap (multiplequantum well, MQW) 133 and p-type nitride layer (p-nitride layer) 135, preferably, N-shaped nitride layer 131 approaches carrier 11 and configures, multiple quantum trap 133 is formed between N-shaped nitride layer 131 and p-type nitride layer 135, when multiple quantum trap 133 is injected from N-shaped nitride layer 131 and p-type nitride layer 135 respectively in electronics and hole, in multiple quantum trap 133, after combination, with the form of light, energy is discharged, thus, opto-electronic conversion structure 13 can be carried out opto-electronic conversion with emission of light.
In addition, the inside of opto-semiconductor device 1 is also formed with pore space structure 15, and it can be defined by the surface, inside in opto-semiconductor device 1 respectively.Preferably, the hollow structure of pore space structure 15 for defining in technique.Pore space structure 15 has refractive index, in the time that light marches to pore space structure 15 in opto-semiconductor device 1, due to the difference of pore space structure 15 inside and outside Refractive Index of Materials (for example, the refractive index of gallium nitride is approximately between 2～3, the refractive index of air is 1), light will change direction at pore space structure 15 places, thus, can control light to advance away from the normal direction N of carrier 11 and trend.
In the present embodiment, pore space structure 15 is along normal direction N, and to run through the mode of opto-electronic conversion structure 13, etching is formed in opto-electronic conversion structure 13.Pore space structure 15, along the projection of normal direction N, is rendered as the combination in any of circle, annular, rectangle, rhombus or aforementioned selection.The distribution kenel that multiple pore space structures 15 presents along the projection of normal direction N can (for example, distribute with square type array distribution or annular array, as shown in Figure 1A) or irregular distribution for regular distribution.In specific embodiment, being spaced apart approximately 3 microns (μ be m) of adjacent two pore space structures 15.In application, the interval of pore space structure 15 can be according to the light path Demand Design in opto-electronic conversion structure 13, and this is not restricted.
Pore space structure 15 can be formed at any position in opto-semiconductor device 1, as between N-shaped nitride layer 131 and carrier 11 or in N-shaped nitride layer 131.In addition, opto-semiconductor device 1 can also comprise resilient coating 17, is arranged between opto-electronic conversion structure 13 and carrier 11.In opto-semiconductor device 1, can also comprise reflector (not shown), be arranged between multiple quantum trap 133 and carrier 11, recycle away from carrier 11 with the light reflection that multiple quantum trap 133 is produced.
Please again consult Figure 1A, p-type extension electrode 211 and N-shaped electrode 23 that opto-semiconductor device also comprises p-type electrode 21, is connected with p-type electrode, along with the increase of area, depend merely on electrode and electric current cannot be distributed in to top layer equably.Therefore opto-semiconductor device 1 can also be provided with transparent electrode layer 19, is formed in opto-electronic conversion structure 13, and transparent electrode layer 19 can increase lateral current, with improving luminous efficiency.Wherein, p-type electrode 21 is formed on transparent electrode layer 19 with p-type extension electrode 211.
As shown in Figure 2 A, it is the generalized section of the opto-semiconductor device 1 of the second embodiment to the second embodiment of the present invention.In the present embodiment, pore space structure 15 is formed in N-shaped nitride layer 131 in the epitaxy technique of opto-semiconductor device 1, and without imposing etching and processing.Pore space structure 15 shown in Fig. 2 A, the section of vertical normal direction N is rendered as triangle, or the section that also can design pore space structure 15 is semicircle, rectangle, trapezoidal or other shape, or the combination of various shapes; In addition, the pore space structure 15 of the present embodiment, along the projection of normal direction N, also can be various shapes, as shown in Fig. 2 B～2D, can be circle, rectangle or rhombus etc., can according in fact by light reflection to tending to need to being designed and selecting of normal direction N.
The pore space structure 15 of the present embodiment also presents distribution kenel along the projection of normal direction N, and the annular array shown in example square type array distribution or Fig. 2 E as shown in Figure 1A distributes.Pore space structure 15 shown in Fig. 2 E distributes along the concentric circles of normal direction N, makes pore space structure 15 be arranged in Fresnel lens (Fresnellens).
Please again consult Fig. 1 C, the third embodiment of the present invention discloses a kind of in order to manufacture the method for opto-semiconductor device of aforementioned the first embodiment.First, extension forms opto-electronic conversion structure 13 on carrier 11, comprises and sequentially forms N-shaped nitride layer 131, multiple quantum trap 133 and p-type nitride layer 135; Then, opto-electronic conversion structure 13 is carried out to dry ecthing, form through hole 151 to punch opto-electronic conversion structure 13.
Then, etching solution (for example oxalic acid (Oxalic acid)) is introduced in through hole 151, with local and etching opto-semiconductor device 13 anisotropically, to form pore space structure 15.A kind of preferred implementation is between carrier 11 and N-shaped nitride layer 131, form resilient coating 17, and through hole 151 to run through opto-electronic conversion structure 13 and resilient coating 17.Therefore apply oxalic acid in through hole 151 time, just can carry out to resilient coating 17 wet etching of side direction, utilize the etching mode of high etching selectivity, the bottom of N-shaped nitride layer 131 and resilient coating 17 are emptied, to form pore space structure 15.As shown in Fig. 1 D, if employing anisotropic etching, pore space structure 15 can be formed as inclined-plane, easily says it, utilize the etch-rate of etching solution to different materials, crystalline texture or crystalline quality, definable goes out the top angle of pore space structure 15 and corresponding size thereof.
The fourth embodiment of the present invention is as shown in Fig. 3 A～3H, and it manufactures the method for the opto-semiconductor device 1 of above-mentioned the second embodiment.First, as shown in Figure 3A, provide carrier 11, and on carrier 11, form nitride layer (for example N-shaped nitride layer 131), carrier 11 is preferably sapphire (Sapphire) substrate, and the outer surface of carrier 11 is suitable to define normal direction N.Then,, as shown in Fig. 3 B～3F, carry out patterning for N-shaped nitride layer 131.In detail, as shown in Figure 3 B, prior to forming photoresist layer 132 on N-shaped nitride layer 131, further consult Fig. 3 C, define photoresist layer 132 to form pattern with gold-tinted technique.Next, as shown in Figure 3 D, form resistant layer 134, for example silicon dioxide (SiO
2) layer, then as shown in Fig. 3 E, remove part photoresist layer 132 and on resistant layer 134, only reserve part resistant layer 134.As Fig. 3 F, continue and be not subject to for N-shaped nitride layer 131 part that resistant layer 134 covers, carry out anisotropic etching, for example carry out inductively coupled plasma (inductive coupling plasma, ICP) etching.
Then, apply the etching solutions such as oxalic acid, potassium hydroxide or phosphoric acid sulfuric acid solution, N-shaped nitride layer 131 is carried out to part and anisotropic wet etching.By above-mentioned steps, can form the N-shaped nitride layer 131 of patterning, it has at least one inner surface, and its off-normal direction N extends.Next, can select resistant layer 134 to remove.
Then, can continue other techniques to form opto-electronic conversion structure 13 on carrier 11, and retain pore space structure 15 in opto-semiconductor device 1.Wherein, pore space structure 15 has refractive index, the suitable air lens, the light of being launched to reflect/to reflect photoelectricity transformational structure 13 of can be used as.
The fifth embodiment of the present invention is as shown in Fig. 4 A～4G, it is the another kind of method of the opto-semiconductor device 1 of above-mentioned the second embodiment of manufacture, first, and as shown in Figure 4 A, carrier 11 (as sapphire substrate) is first provided, then on carrier 11, forms silicon dioxide (SiO
2) layer 130; Then, as shown in Figure 4 B, form the photoresist layer 132 of patterning on silicon dioxide layer 130, preferably, step is as shown in Figure 4 B to carry out hot melt back (thermalreflow) technique for the photoresist layer 132 of patterning, to form dome-shaped or approximate dome-type structure; As shown in Figure 4 C, carry out anisotropic etching for photoresist layer 132 and the silicon dioxide layer 130 of patterning, when making to remove photoresist layer 13, individual dome-like structures can be passed to silicon dioxide layer 130.Thus, form the silicon dioxide layer 130 of patterning.
As shown in Figure 4 D, form the silicon dioxide layer 130 of nitride layer (as comprising gallium nitride layer) with overlay pattern; Then as shown in Fig. 4 E and Fig. 4 F, carry out inductively coupled plasma (inductivecoupling plasma, ICP) etching, be able to local exposure with etching N-type nitride layer 131 to the silicon dioxide layer 130 of patterning, then the silicon dioxide layer 130 of patterning is carried out to buffer oxide etch (buffered oxide etch, BOE), form pore space structure 15 to empty and to remove the silicon dioxide layer 130 of patterning.Only the etching to silicon dioxide layer 130, does not limit by top and starts, and also can be undertaken by side.
Finally, as shown in Figure 4 G, continue extension to form opto-electronic conversion structure 13, and retain pore space structure 15 in opto-semiconductor device 1.
In aforementioned three～five embodiment, all can first form resilient coating 17 or reflector (not shown) on carrier 11.And after extension forms opto-electronic conversion structure 13, finally forming transparent electrode layer 19 in opto-electronic conversion structure 13, and form p-type electrode 21 and the p-type extension electrode 211 that is connected with p-type electrode 21 on transparent electrode layer 19, and form N-shaped electrode 23 in appropriate location.
In sum, opto-semiconductor device provided by the present invention and manufacture method thereof, can in opto-semiconductor device, form pore space structure, as the air lens of reflection ray, thus, the light that optoelectronic semiconductor structure is launched, the normal direction of the carrier that led, and then the forward light extraction efficiency of lifting opto-semiconductor device.
The above embodiments only, in order to exemplify enforcement aspect of the present invention and to explain technical characterictic of the present invention, are not used for limiting category of the present invention.Any those skilled in the art can unlabored change or the arrangement of identity property all belong to the scope that the present invention advocates, interest field of the present invention should be as the criterion with claim.
Claims (35)
1. an opto-semiconductor device, comprises:
Carrier, definition one normal direction;
Opto-electronic conversion structure, is arranged on this carrier, and this opto-electronic conversion structure can be carried out opto-electronic conversion with emission of light; And
At least one inner surface, is formed in this opto-semiconductor device, to define at least one pore space structure between this carrier and this opto-electronic conversion structure;
Wherein, this at least one pore space structure has refractive index, changes direction while making this light march to this at least one pore space structure, and advances towards this normal direction away from this carrier,
Wherein this at least one pore space structure is arranged in this opto-electronic conversion structure and is positioned at the lower surface of this opto-electronic conversion structure.
2. opto-semiconductor device as claimed in claim 1, wherein this at least one pore space structure, along the projection of this normal direction, is rendered as one of them of circle, annular, rectangle and rhombus.
3. opto-semiconductor device as claimed in claim 2, the wherein section of vertical this normal direction of this at least one pore space structure, is rendered as triangle, semicircle, rectangle and trapezoidal one of them.
4. opto-semiconductor device as claimed in claim 1 comprises multiple pore space structures, and these pore space structures present a distribution kenel along the projection of this normal direction.
5. opto-semiconductor device as claimed in claim 4, wherein this distribution kenel is one of them that square type array distribution and annular array distribute.
6. opto-semiconductor device as claimed in claim 5, wherein this annular array is distributed as concentric distribution, makes these pore space structures be arranged in Fresnel lens.
7. opto-semiconductor device as claimed in claim 1, wherein this at least one pore space structure, along this normal direction, runs through this opto-electronic conversion structure.
8. opto-semiconductor device as claimed in claim 1, wherein this opto-electronic conversion structure comprise N-shaped nitride layer, p-type nitride layer and be positioned at this N-shaped nitride layer and this p-type nitride layer between multiple quantum trap.
9. opto-semiconductor device as claimed in claim 8, wherein this N-shaped nitride layer of this opto-electronic conversion structure approaches this carrier.
10. opto-semiconductor device as claimed in claim 9, also comprises resilient coating, is arranged between this opto-electronic conversion structure and this carrier.
11. opto-semiconductor devices as claimed in claim 8, wherein, this at least one pore space structure is formed in this N-shaped nitride layer.
12. opto-semiconductor devices as claimed in claim 8, wherein, this at least one pore space structure is formed between this N-shaped nitride layer and this carrier.
13. opto-semiconductor devices as claimed in claim 8, also comprise reflector, are arranged between this multiple quantum trap and this carrier.
14. opto-semiconductor devices as claimed in claim 1, also comprise transparent electrode layer, are formed in this opto-electronic conversion structure.
15. opto-semiconductor devices as claimed in claim 14, the p-type extension electrode that also comprises p-type electrode and be connected with this p-type electrode, is formed on this transparent electrode layer.
16. opto-semiconductor devices as claimed in claim 1, wherein this carrier is sapphire substrate, and this opto-electronic conversion structure is light-emitting diode.
Manufacture the method for opto-semiconductor device, comprise the following step for 17. 1 kinds:
Provide carrier, definition one normal direction;
Form the nitride layer of patterning, it has at least one inner surface, departs from this normal direction and extends;
Form opto-electronic conversion structure on this carrier; And
Form at least one pore space structure between this carrier and this opto-electronic conversion structure, wherein, this at least one pore space structure has refractive index, can reflect the light of this opto-electronic conversion structure transmitting,
Wherein this at least one pore space structure is arranged in this opto-electronic conversion structure and is positioned at the lower surface of this opto-electronic conversion structure.
18. methods as claimed in claim 17, the wherein step of the nitride layer of this formation patterning, comprises:
Form nitride layer;
This nitride layer of patterning; And
This nitride layer of anisotropic etching partly.
19. methods as claimed in claim 18, wherein the step of this this nitride layer of patterning comprises:
Form photoresist layer on this nitride layer;
Define this photoresist layer to form pattern;
Form resistant layer;
Remove this photoresist layer and on this resistant layer; And
This nitride layer of anisotropic etching.
20. methods as claimed in claim 19, the wherein step of this this nitride layer of anisotropic etching, for carrying out inductively coupled plasma etching.
21. methods as claimed in claim 19, wherein this carrier is that sapphire substrate, this opto-electronic conversion structure are that light-emitting diode, this nitride layer comprise gallium nitride layer and this resistant layer is silicon dioxide layer.
22. methods as claimed in claim 18, wherein this step of this nitride layer of anisotropic etching partly, for applying oxalic acid, potassium hydroxide or phosphoric acid sulfuric acid solution, carries out wet etching to this nitride layer.
23. methods as claimed in claim 19, wherein this,, partly after the step of this nitride layer of anisotropic etching, also comprises the step that removes this resistant layer.
24. methods as claimed in claim 17, the wherein step of the nitride layer of this formation patterning, comprises:
Form the silicon dioxide layer of patterning;
Form nitride layer to cover the silicon dioxide layer of this patterning; And
Remove the silicon dioxide layer of this patterning.
25. methods as claimed in claim 24, wherein remove the step of the silicon dioxide layer of this patterning, comprise the following step:
This nitride layer of etching is to local exposure of silicon dioxide layer of this patterning; And
The silicon dioxide layer of this patterning is carried out to buffer oxide etch.
26. methods as claimed in claim 24, the wherein step of the silicon dioxide layer of this formation patterning, comprises:
Form silicon dioxide layer on this carrier;
Form the photoresist layer of patterning on this silicon dioxide layer;
The photoresist layer of hot this patterning of melt back; And
The photoresist layer of this patterning of anisotropic etching and this silicon dioxide layer.
27. methods as claimed in claim 26, the wherein photoresist layer of this this patterning of anisotropic etching and the step of this silicon dioxide layer, for carrying out inductively coupled plasma etching.
28. methods as claimed in claim 24, wherein this carrier is that sapphire substrate, this opto-electronic conversion structure are that light-emitting diode and this nitride layer comprise gallium nitride layer.
29. methods as claimed in claim 17, wherein, before the step of the nitride layer of this formation patterning, also comprise:
Form resilient coating on this carrier.
30. methods as claimed in claim 17, also comprise the following step:
Form transparent electrode layer in this opto-electronic conversion structure; And
The p-type extension electrode that forms p-type electrode and be connected with this p-type electrode is on this transparent electrode layer.
Manufacture the method for opto-semiconductor device, comprise the following step for 31. 1 kinds:
Carrier is provided;
Extension forms opto-electronic conversion structure on this carrier;
This opto-electronic conversion structure of etching is to form at least always perforation; And
In this at least one through hole, this opto-semiconductor device of local anisotropy etching, to form at least one pore space structure in this opto-semiconductor device between this carrier and this opto-electronic conversion structure,
Wherein this at least one pore space structure is arranged in this opto-electronic conversion structure and is positioned at the lower surface of this opto-electronic conversion structure.
32. methods as claimed in claim 31, wherein this extension forms before the step of opto-electronic conversion structure, also comprises:
Form resilient coating on this carrier.
33. methods as claimed in claim 32, the wherein etched step of this local anisotropy, is in this at least one through hole, to apply oxalic acid so that this resilient coating is carried out to wet etching.
34. methods as claimed in claim 31, wherein this extension forms the step of opto-electronic conversion structure on this carrier, comprises:
Form N-shaped nitride layer, P type nitride layer and be positioned at this N-shaped nitride layer and this p-type nitride layer between multiple quantum trap; And
Form transparent electrode layer in opto-electronic conversion structure.
35. methods as claimed in claim 34, also comprise:
The p-type extension electrode that forms p-type electrode and be connected with this p-type electrode is on this transparent electrode layer.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6258618B1 (en) * | 1998-09-11 | 2001-07-10 | Lumileds Lighting, Us, Llc | Light emitting device having a finely-patterned reflective contact |
| CN1552103A (en) * | 2001-02-01 | 2004-12-01 | ���﹫˾ | Light emitting diodes including modifications for light extraction and manufacturing methods therefor |
| WO2009038324A3 (en) * | 2007-09-18 | 2009-05-14 | Nat Univ Chungbuk Ind Acad | Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6258618B1 (en) * | 1998-09-11 | 2001-07-10 | Lumileds Lighting, Us, Llc | Light emitting device having a finely-patterned reflective contact |
| CN1552103A (en) * | 2001-02-01 | 2004-12-01 | ���﹫˾ | Light emitting diodes including modifications for light extraction and manufacturing methods therefor |
| WO2009038324A3 (en) * | 2007-09-18 | 2009-05-14 | Nat Univ Chungbuk Ind Acad | Porous pattern semiconductor structure and semiconductor device and manufacturing method thereof |
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