JP2007500948A5 - - Google Patents

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Publication number
JP2007500948A5
JP2007500948A5 JP2006532135A JP2006532135A JP2007500948A5 JP 2007500948 A5 JP2007500948 A5 JP 2007500948A5 JP 2006532135 A JP2006532135 A JP 2006532135A JP 2006532135 A JP2006532135 A JP 2006532135A JP 2007500948 A5 JP2007500948 A5 JP 2007500948A5
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JP
Japan
Prior art keywords
charged particle
beamlet
lens
array
diaphragm
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JP2006532135A
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English (en)
Japanese (ja)
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JP4949843B2 (ja
JP2007500948A (ja
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Priority claimed from PCT/NL2004/000381 external-priority patent/WO2004107050A2/en
Publication of JP2007500948A publication Critical patent/JP2007500948A/ja
Publication of JP2007500948A5 publication Critical patent/JP2007500948A5/ja
Application granted granted Critical
Publication of JP4949843B2 publication Critical patent/JP4949843B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2006532135A 2003-05-28 2004-05-27 荷電粒子ビームレット露光システム Expired - Fee Related JP4949843B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28
US60/473,810 2003-05-28
PCT/NL2004/000381 WO2004107050A2 (en) 2003-05-28 2004-05-27 Charged particle beamlet exposure system

Publications (3)

Publication Number Publication Date
JP2007500948A JP2007500948A (ja) 2007-01-18
JP2007500948A5 true JP2007500948A5 (https=) 2007-07-12
JP4949843B2 JP4949843B2 (ja) 2012-06-13

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ID=33490650

Family Applications (1)

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JP2006532135A Expired - Fee Related JP4949843B2 (ja) 2003-05-28 2004-05-27 荷電粒子ビームレット露光システム

Country Status (8)

Country Link
US (1) US7084414B2 (https=)
EP (2) EP1627412B1 (https=)
JP (1) JP4949843B2 (https=)
KR (2) KR101175523B1 (https=)
CN (1) CN100543920C (https=)
AT (2) ATE524822T1 (https=)
DE (1) DE602004005704T2 (https=)
WO (1) WO2004107050A2 (https=)

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US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
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US8586949B2 (en) 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
US8884255B2 (en) 2010-11-13 2014-11-11 Mapper Lithography Ip B.V. Data path for lithography apparatus
WO2012062934A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle beam modulator
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TWI514089B (zh) 2011-04-28 2015-12-21 瑪波微影Ｉｐ公司 在微影系統中用於轉移基板的設備
US9703213B2 (en) * 2011-09-12 2017-07-11 Mapper Lithography Ip B.V. Substrate processing apparatus
TW201330705A (zh) 2011-09-28 2013-07-16 Mapper Lithography Ip Bv 電漿產生器
CN104272427B (zh) * 2012-03-08 2017-05-17 迈普尔平版印刷Ip有限公司 具有对准传感器和射束测量传感器的带电粒子光刻系统
CN106933063B (zh) 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
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KR101945964B1 (ko) 2012-05-14 2019-02-11 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법
CN104428866A (zh) 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
NL2010760C2 (en) 2013-05-03 2014-11-04 Mapper Lithography Ip Bv Beam grid layout.
EP2816585A1 (en) * 2013-06-17 2014-12-24 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam system and method of operating thereof
WO2015024956A1 (en) 2013-08-23 2015-02-26 Mapper Lithography Ip B.V. Drying device for use in a lithography system
CN108962708A (zh) 2013-11-14 2018-12-07 迈普尔平版印刷Ip有限公司 电极堆栈布置
TWI661457B (zh) 2013-12-30 2019-06-01 荷蘭商Ａｓｍｌ荷蘭公司 陰極配置、電子槍以及包含此電子槍的微影系統
KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
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US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
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