KR101175523B1 - 대전 입자 빔렛 노광 시스템 - Google Patents

대전 입자 빔렛 노광 시스템 Download PDF

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Publication number
KR101175523B1
KR101175523B1 KR1020127003554A KR20127003554A KR101175523B1 KR 101175523 B1 KR101175523 B1 KR 101175523B1 KR 1020127003554 A KR1020127003554 A KR 1020127003554A KR 20127003554 A KR20127003554 A KR 20127003554A KR 101175523 B1 KR101175523 B1 KR 101175523B1
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KR
South Korea
Prior art keywords
charged particle
opening
beamlet
lens
array
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1020127003554A
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English (en)
Korean (ko)
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KR20120025629A (ko
Inventor
피터 크루이트
마르코 잔-자코 빌란트
Original Assignee
마퍼 리쏘그라피 아이피 비.브이.
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Publication of KR20120025629A publication Critical patent/KR20120025629A/ko
Application granted granted Critical
Publication of KR101175523B1 publication Critical patent/KR101175523B1/ko
Assigned to 에이에스엠엘 네델란즈 비.브이. reassignment 에이에스엠엘 네델란즈 비.브이. 권리의 전부이전등록 Assignors: 마퍼 리쏘그라피 아이피 비.브이.
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
KR1020127003554A 2003-05-28 2004-05-27 대전 입자 빔렛 노광 시스템 Expired - Lifetime KR101175523B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28
US60/473,810 2003-05-28
PCT/NL2004/000381 WO2004107050A2 (en) 2003-05-28 2004-05-27 Charged particle beamlet exposure system

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020057022719A Division KR101168200B1 (ko) 2003-05-28 2004-05-27 대전 입자 빔렛 노광 시스템

Publications (2)

Publication Number Publication Date
KR20120025629A KR20120025629A (ko) 2012-03-15
KR101175523B1 true KR101175523B1 (ko) 2012-08-21

Family

ID=33490650

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127003554A Expired - Lifetime KR101175523B1 (ko) 2003-05-28 2004-05-27 대전 입자 빔렛 노광 시스템
KR1020057022719A Expired - Lifetime KR101168200B1 (ko) 2003-05-28 2004-05-27 대전 입자 빔렛 노광 시스템

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020057022719A Expired - Lifetime KR101168200B1 (ko) 2003-05-28 2004-05-27 대전 입자 빔렛 노광 시스템

Country Status (8)

Country Link
US (1) US7084414B2 (https=)
EP (2) EP1627412B1 (https=)
JP (1) JP4949843B2 (https=)
KR (2) KR101175523B1 (https=)
CN (1) CN100543920C (https=)
AT (2) ATE524822T1 (https=)
DE (1) DE602004005704T2 (https=)
WO (1) WO2004107050A2 (https=)

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US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
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Also Published As

Publication number Publication date
ATE524822T1 (de) 2011-09-15
CN100543920C (zh) 2009-09-23
JP4949843B2 (ja) 2012-06-13
US7084414B2 (en) 2006-08-01
JP2007500948A (ja) 2007-01-18
CN1795529A (zh) 2006-06-28
US20050161621A1 (en) 2005-07-28
WO2004107050A2 (en) 2004-12-09
ATE358885T1 (de) 2007-04-15
KR101168200B1 (ko) 2012-07-25
DE602004005704T2 (de) 2007-12-27
WO2004107050A3 (en) 2005-04-21
DE602004005704D1 (de) 2007-05-16
EP1830384A3 (en) 2007-09-19
EP1830384A2 (en) 2007-09-05
EP1627412A2 (en) 2006-02-22
KR20060036391A (ko) 2006-04-28
KR20120025629A (ko) 2012-03-15
EP1830384B1 (en) 2011-09-14
EP1627412B1 (en) 2007-04-04

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