ATE524822T1 - Belichtungsverfahren für strahlen aus geladenen teilchen - Google Patents

Belichtungsverfahren für strahlen aus geladenen teilchen

Info

Publication number
ATE524822T1
ATE524822T1 AT07075242T AT07075242T ATE524822T1 AT E524822 T1 ATE524822 T1 AT E524822T1 AT 07075242 T AT07075242 T AT 07075242T AT 07075242 T AT07075242 T AT 07075242T AT E524822 T1 ATE524822 T1 AT E524822T1
Authority
AT
Austria
Prior art keywords
charged particle
aperture
beamlet
deflector
lens
Prior art date
Application number
AT07075242T
Other languages
German (de)
English (en)
Inventor
Marco Jan-Jaco Wieland
Pieter Kruit
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Application granted granted Critical
Publication of ATE524822T1 publication Critical patent/ATE524822T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT07075242T 2003-05-28 2004-05-27 Belichtungsverfahren für strahlen aus geladenen teilchen ATE524822T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28

Publications (1)

Publication Number Publication Date
ATE524822T1 true ATE524822T1 (de) 2011-09-15

Family

ID=33490650

Family Applications (2)

Application Number Title Priority Date Filing Date
AT07075242T ATE524822T1 (de) 2003-05-28 2004-05-27 Belichtungsverfahren für strahlen aus geladenen teilchen
AT04748613T ATE358885T1 (de) 2003-05-28 2004-05-27 Beamlet-belichtungssystem mit geladenen teilchen

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT04748613T ATE358885T1 (de) 2003-05-28 2004-05-27 Beamlet-belichtungssystem mit geladenen teilchen

Country Status (8)

Country Link
US (1) US7084414B2 (https=)
EP (2) EP1830384B1 (https=)
JP (1) JP4949843B2 (https=)
KR (2) KR101175523B1 (https=)
CN (1) CN100543920C (https=)
AT (2) ATE524822T1 (https=)
DE (1) DE602004005704T2 (https=)
WO (1) WO2004107050A2 (https=)

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US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
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WO2009127659A2 (en) 2008-04-15 2009-10-22 Mapper Lithography Ip B.V. Beamlet blanker arrangement
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CN102460631B (zh) 2009-05-20 2015-03-25 迈普尔平版印刷Ip有限公司 两次扫描
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JP6158091B2 (ja) 2010-12-14 2017-07-05 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフィシステム及びこのようなリソグラフィシステムで基板を処理する方法
CN103477285A (zh) 2011-02-16 2013-12-25 迈普尔平版印刷Ip有限公司 用于磁屏蔽的系统
JP5951753B2 (ja) 2011-04-22 2016-07-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフィ機のクラスタのためのネットワークアーキテクチャおよびプロトコル
US8936994B2 (en) * 2011-04-28 2015-01-20 Mapper Lithography Ip B.V. Method of processing a substrate in a lithography system
CN103930829A (zh) 2011-09-12 2014-07-16 迈普尔平版印刷Ip有限公司 基板处理装置
TW201330705A (zh) 2011-09-28 2013-07-16 Mapper Lithography Ip Bv 電漿產生器
WO2013132064A2 (en) 2012-03-08 2013-09-12 Mapper Lithography Ip B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
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US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
CN107359101B (zh) 2012-05-14 2019-07-12 Asml荷兰有限公司 带电粒子射束产生器中的高电压屏蔽和冷却
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KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
US9981293B2 (en) 2016-04-21 2018-05-29 Mapper Lithography Ip B.V. Method and system for the removal and/or avoidance of contamination in charged particle beam systems
KR102401179B1 (ko) * 2017-12-12 2022-05-24 삼성전자주식회사 전자빔 장치의 어퍼처 시스템, 전자빔 노광 장치 및 전자빔 노광 장치 시스템
CN111971774B (zh) * 2018-03-29 2023-09-29 株式会社日立高新技术 带电粒子束装置
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Also Published As

Publication number Publication date
EP1627412B1 (en) 2007-04-04
EP1830384B1 (en) 2011-09-14
JP2007500948A (ja) 2007-01-18
US20050161621A1 (en) 2005-07-28
JP4949843B2 (ja) 2012-06-13
EP1830384A3 (en) 2007-09-19
EP1627412A2 (en) 2006-02-22
US7084414B2 (en) 2006-08-01
CN100543920C (zh) 2009-09-23
KR101175523B1 (ko) 2012-08-21
EP1830384A2 (en) 2007-09-05
DE602004005704D1 (de) 2007-05-16
DE602004005704T2 (de) 2007-12-27
KR20120025629A (ko) 2012-03-15
ATE358885T1 (de) 2007-04-15
KR101168200B1 (ko) 2012-07-25
KR20060036391A (ko) 2006-04-28
CN1795529A (zh) 2006-06-28
WO2004107050A2 (en) 2004-12-09
WO2004107050A3 (en) 2005-04-21

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