ATE524822T1 - Belichtungsverfahren für strahlen aus geladenen teilchen - Google Patents

Belichtungsverfahren für strahlen aus geladenen teilchen

Info

Publication number
ATE524822T1
ATE524822T1 AT07075242T AT07075242T ATE524822T1 AT E524822 T1 ATE524822 T1 AT E524822T1 AT 07075242 T AT07075242 T AT 07075242T AT 07075242 T AT07075242 T AT 07075242T AT E524822 T1 ATE524822 T1 AT E524822T1
Authority
AT
Austria
Prior art keywords
charged particle
aperture
beamlet
deflector
lens
Prior art date
Application number
AT07075242T
Other languages
German (de)
English (en)
Inventor
Marco Jan-Jaco Wieland
Pieter Kruit
Original Assignee
Mapper Lithography Ip Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithography Ip Bv filed Critical Mapper Lithography Ip Bv
Application granted granted Critical
Publication of ATE524822T1 publication Critical patent/ATE524822T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
AT07075242T 2003-05-28 2004-05-27 Belichtungsverfahren für strahlen aus geladenen teilchen ATE524822T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28

Publications (1)

Publication Number Publication Date
ATE524822T1 true ATE524822T1 (de) 2011-09-15

Family

ID=33490650

Family Applications (2)

Application Number Title Priority Date Filing Date
AT07075242T ATE524822T1 (de) 2003-05-28 2004-05-27 Belichtungsverfahren für strahlen aus geladenen teilchen
AT04748613T ATE358885T1 (de) 2003-05-28 2004-05-27 Beamlet-belichtungssystem mit geladenen teilchen

Family Applications After (1)

Application Number Title Priority Date Filing Date
AT04748613T ATE358885T1 (de) 2003-05-28 2004-05-27 Beamlet-belichtungssystem mit geladenen teilchen

Country Status (8)

Country Link
US (1) US7084414B2 (https=)
EP (2) EP1627412B1 (https=)
JP (1) JP4949843B2 (https=)
KR (2) KR101175523B1 (https=)
CN (1) CN100543920C (https=)
AT (2) ATE524822T1 (https=)
DE (1) DE602004005704T2 (https=)
WO (1) WO2004107050A2 (https=)

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EP2005460A4 (en) * 2006-03-27 2010-11-24 Multibeam Systems Inc OPTICAL FOR GENERATING CHARGED PARTICLE DATA BEAMS HAVING HIGH CURRENT DENSITY
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US8134135B2 (en) * 2006-07-25 2012-03-13 Mapper Lithography Ip B.V. Multiple beam charged particle optical system
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US8445869B2 (en) 2008-04-15 2013-05-21 Mapper Lithography Ip B.V. Projection lens arrangement
US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
JP5268170B2 (ja) * 2008-04-15 2013-08-21 マッパー・リソグラフィー・アイピー・ビー．ブイ． 投影レンズ構成体
US7851774B2 (en) * 2008-04-25 2010-12-14 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for direct writing to a wafer
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US20110049393A1 (en) 2009-02-22 2011-03-03 Mapper Lithography Ip B.V. Lithography Machine and Substrate Handling Arrangement
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US9305747B2 (en) 2010-11-13 2016-04-05 Mapper Lithography Ip B.V. Data path for lithography apparatus
KR101755577B1 (ko) 2010-11-13 2017-07-07 마퍼 리쏘그라피 아이피 비.브이. 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템
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WO2012062934A1 (en) 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle beam modulator
EP2681624B1 (en) 2010-12-14 2016-07-20 Mapper Lithography IP B.V. Lithography system and method of processing substrates in such a lithography system
EP2676168B1 (en) 2011-02-16 2018-09-12 Mapper Lithography IP B.V. System for magnetic shielding
JP5951753B2 (ja) 2011-04-22 2016-07-13 マッパー・リソグラフィー・アイピー・ビー．ブイ． リソグラフィ機のクラスタのためのネットワークアーキテクチャおよびプロトコル
TWI514089B (zh) 2011-04-28 2015-12-21 瑪波微影Ｉｐ公司 在微影系統中用於轉移基板的設備
US9703213B2 (en) * 2011-09-12 2017-07-11 Mapper Lithography Ip B.V. Substrate processing apparatus
TW201330705A (zh) 2011-09-28 2013-07-16 Mapper Lithography Ip Bv 電漿產生器
CN104272427B (zh) * 2012-03-08 2017-05-17 迈普尔平版印刷Ip有限公司 具有对准传感器和射束测量传感器的带电粒子光刻系统
CN106933063B (zh) 2012-03-20 2019-01-18 迈普尔平版印刷Ip有限公司 电子射束光刻系统
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
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US10586625B2 (en) 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
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CN108962708A (zh) 2013-11-14 2018-12-07 迈普尔平版印刷Ip有限公司 电极堆栈布置
TWI661457B (zh) 2013-12-30 2019-06-01 荷蘭商Ａｓｍｌ荷蘭公司 陰極配置、電子槍以及包含此電子槍的微影系統
KR20170084240A (ko) 2014-11-14 2017-07-19 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 시스템에서 기판을 이송하기 위한 로드 로크 시스템 및 방법
US9484188B2 (en) 2015-03-11 2016-11-01 Mapper Lithography Ip B.V. Individual beam pattern placement verification in multiple beam lithography
US10096450B2 (en) 2015-12-28 2018-10-09 Mapper Lithography Ip B.V. Control system and method for lithography apparatus
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KR102401179B1 (ko) * 2017-12-12 2022-05-24 삼성전자주식회사 전자빔 장치의 어퍼처 시스템, 전자빔 노광 장치 및 전자빔 노광 장치 시스템
CN111971774B (zh) * 2018-03-29 2023-09-29 株式会社日立高新技术 带电粒子束装置
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Also Published As

Publication number Publication date
CN100543920C (zh) 2009-09-23
JP4949843B2 (ja) 2012-06-13
US7084414B2 (en) 2006-08-01
JP2007500948A (ja) 2007-01-18
CN1795529A (zh) 2006-06-28
US20050161621A1 (en) 2005-07-28
WO2004107050A2 (en) 2004-12-09
ATE358885T1 (de) 2007-04-15
KR101175523B1 (ko) 2012-08-21
KR101168200B1 (ko) 2012-07-25
DE602004005704T2 (de) 2007-12-27
WO2004107050A3 (en) 2005-04-21
DE602004005704D1 (de) 2007-05-16
EP1830384A3 (en) 2007-09-19
EP1830384A2 (en) 2007-09-05
EP1627412A2 (en) 2006-02-22
KR20060036391A (ko) 2006-04-28
KR20120025629A (ko) 2012-03-15
EP1830384B1 (en) 2011-09-14
EP1627412B1 (en) 2007-04-04

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