DE602004005704T2 - Belichtungssystem unter Verwendung von Beamlets geladener Teilchen - Google Patents

Belichtungssystem unter Verwendung von Beamlets geladener Teilchen Download PDF

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Publication number
DE602004005704T2
DE602004005704T2 DE602004005704T DE602004005704T DE602004005704T2 DE 602004005704 T2 DE602004005704 T2 DE 602004005704T2 DE 602004005704 T DE602004005704 T DE 602004005704T DE 602004005704 T DE602004005704 T DE 602004005704T DE 602004005704 T2 DE602004005704 T2 DE 602004005704T2
Authority
DE
Germany
Prior art keywords
aperture
charged particles
lens
group
small
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004005704T
Other languages
German (de)
English (en)
Other versions
DE602004005704D1 (de
Inventor
Pieter Kruit
Marco Jan-Jaco Wieland
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mapper Lithopraphy IP BV
Original Assignee
Mapper Lithopraphy IP BV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mapper Lithopraphy IP BV filed Critical Mapper Lithopraphy IP BV
Publication of DE602004005704D1 publication Critical patent/DE602004005704D1/de
Application granted granted Critical
Publication of DE602004005704T2 publication Critical patent/DE602004005704T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
    • H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
    • H10P76/2041—Photolithographic processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/045—Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/049—Focusing means
    • H01J2237/0492—Lens systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/15—Means for deflecting or directing discharge
    • H01J2237/1501—Beam alignment means or procedures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE602004005704T 2003-05-28 2004-05-27 Belichtungssystem unter Verwendung von Beamlets geladener Teilchen Expired - Lifetime DE602004005704T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US47381003P 2003-05-28 2003-05-28
US473810P 2003-05-28
PCT/NL2004/000381 WO2004107050A2 (en) 2003-05-28 2004-05-27 Charged particle beamlet exposure system

Publications (2)

Publication Number Publication Date
DE602004005704D1 DE602004005704D1 (de) 2007-05-16
DE602004005704T2 true DE602004005704T2 (de) 2007-12-27

Family

ID=33490650

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004005704T Expired - Lifetime DE602004005704T2 (de) 2003-05-28 2004-05-27 Belichtungssystem unter Verwendung von Beamlets geladener Teilchen

Country Status (8)

Country Link
US (1) US7084414B2 (https=)
EP (2) EP1830384B1 (https=)
JP (1) JP4949843B2 (https=)
KR (2) KR101175523B1 (https=)
CN (1) CN100543920C (https=)
AT (2) ATE524822T1 (https=)
DE (1) DE602004005704T2 (https=)
WO (1) WO2004107050A2 (https=)

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US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
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CN102422380A (zh) * 2009-02-22 2012-04-18 迈普尔平版印刷Ip有限公司 带电粒子微影设备及真空腔室中产生真空的方法
KR20110139699A (ko) 2009-02-22 2011-12-29 마퍼 리쏘그라피 아이피 비.브이. 리소그래피 장치 및 기판 핸들링 배열체
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Also Published As

Publication number Publication date
EP1627412B1 (en) 2007-04-04
EP1830384B1 (en) 2011-09-14
JP2007500948A (ja) 2007-01-18
US20050161621A1 (en) 2005-07-28
JP4949843B2 (ja) 2012-06-13
EP1830384A3 (en) 2007-09-19
EP1627412A2 (en) 2006-02-22
US7084414B2 (en) 2006-08-01
CN100543920C (zh) 2009-09-23
KR101175523B1 (ko) 2012-08-21
EP1830384A2 (en) 2007-09-05
DE602004005704D1 (de) 2007-05-16
KR20120025629A (ko) 2012-03-15
ATE358885T1 (de) 2007-04-15
KR101168200B1 (ko) 2012-07-25
KR20060036391A (ko) 2006-04-28
CN1795529A (zh) 2006-06-28
WO2004107050A2 (en) 2004-12-09
WO2004107050A3 (en) 2005-04-21
ATE524822T1 (de) 2011-09-15

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