JP2007500449A5 - - Google Patents

Download PDF

Info

Publication number
JP2007500449A5
JP2007500449A5 JP2006521952A JP2006521952A JP2007500449A5 JP 2007500449 A5 JP2007500449 A5 JP 2007500449A5 JP 2006521952 A JP2006521952 A JP 2006521952A JP 2006521952 A JP2006521952 A JP 2006521952A JP 2007500449 A5 JP2007500449 A5 JP 2007500449A5
Authority
JP
Japan
Prior art keywords
reflectance
reflectivity
passage
immersion
lithography system
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006521952A
Other languages
English (en)
Japanese (ja)
Other versions
JP4465356B2 (ja
JP2007500449A (ja
Filing date
Publication date
Priority claimed from US10/628,021 external-priority patent/US7006209B2/en
Application filed filed Critical
Publication of JP2007500449A publication Critical patent/JP2007500449A/ja
Publication of JP2007500449A5 publication Critical patent/JP2007500449A5/ja
Application granted granted Critical
Publication of JP4465356B2 publication Critical patent/JP4465356B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2006521952A 2003-07-25 2004-07-23 浸漬リソグラフィシステムの監視・制御方法及び装置 Expired - Fee Related JP4465356B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/628,021 US7006209B2 (en) 2003-07-25 2003-07-25 Method and apparatus for monitoring and controlling imaging in immersion lithography systems
PCT/US2004/023876 WO2005013008A2 (en) 2003-07-25 2004-07-23 Method for monitoring and controlling imaging in immersion lithography systems

Publications (3)

Publication Number Publication Date
JP2007500449A JP2007500449A (ja) 2007-01-11
JP2007500449A5 true JP2007500449A5 (https=) 2009-05-28
JP4465356B2 JP4465356B2 (ja) 2010-05-19

Family

ID=34080711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006521952A Expired - Fee Related JP4465356B2 (ja) 2003-07-25 2004-07-23 浸漬リソグラフィシステムの監視・制御方法及び装置

Country Status (7)

Country Link
US (1) US7006209B2 (https=)
EP (1) EP1652008B1 (https=)
JP (1) JP4465356B2 (https=)
KR (1) KR101071966B1 (https=)
CN (1) CN100538523C (https=)
TW (1) TWI372947B (https=)
WO (1) WO2005013008A2 (https=)

Families Citing this family (118)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10503084B2 (en) 2002-11-12 2019-12-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
SG135052A1 (en) 2002-11-12 2007-09-28 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
SG121819A1 (en) 2002-11-12 2006-05-26 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US7372541B2 (en) 2002-11-12 2008-05-13 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP4352874B2 (ja) * 2002-12-10 2009-10-28 株式会社ニコン 露光装置及びデバイス製造方法
SG157962A1 (en) 2002-12-10 2010-01-29 Nikon Corp Exposure apparatus and method for producing device
EP1571697A4 (en) 2002-12-10 2007-07-04 Nikon Corp EXPOSURE SYSTEM AND COMPONENT MANUFACTURING METHOD
US7948604B2 (en) 2002-12-10 2011-05-24 Nikon Corporation Exposure apparatus and method for producing device
US7242455B2 (en) 2002-12-10 2007-07-10 Nikon Corporation Exposure apparatus and method for producing device
KR101101737B1 (ko) 2002-12-10 2012-01-05 가부시키가이샤 니콘 노광장치 및 노광방법, 디바이스 제조방법
WO2004053952A1 (ja) 2002-12-10 2004-06-24 Nikon Corporation 露光装置及びデバイス製造方法
DE10261775A1 (de) 2002-12-20 2004-07-01 Carl Zeiss Smt Ag Vorrichtung zur optischen Vermessung eines Abbildungssystems
KR101643112B1 (ko) 2003-02-26 2016-07-26 가부시키가이샤 니콘 노광 장치, 노광 방법 및 디바이스 제조 방법
KR101345474B1 (ko) 2003-03-25 2013-12-27 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
JP4902201B2 (ja) 2003-04-07 2012-03-21 株式会社ニコン 露光装置、露光方法及びデバイス製造方法
KR20110104084A (ko) 2003-04-09 2011-09-21 가부시키가이샤 니콘 액침 리소그래피 유체 제어 시스템
SG141426A1 (en) 2003-04-10 2008-04-28 Nikon Corp Environmental system including vacuum scavange for an immersion lithography apparatus
KR101431938B1 (ko) 2003-04-10 2014-08-19 가부시키가이샤 니콘 액침 리소그래피 장치용 운반 영역을 포함하는 환경 시스템
EP3352010A1 (en) 2003-04-10 2018-07-25 Nikon Corporation Run-off path to collect liquid for an immersion lithography apparatus
JP4582089B2 (ja) 2003-04-11 2010-11-17 株式会社ニコン 液浸リソグラフィ用の液体噴射回収システム
SG139733A1 (en) 2003-04-11 2008-02-29 Nikon Corp Apparatus having an immersion fluid system configured to maintain immersion fluid in a gap adjacent an optical assembly
KR101289959B1 (ko) * 2003-04-11 2013-07-26 가부시키가이샤 니콘 액침 리소그래피에 의한 광학기기의 세정방법
KR20050122269A (ko) 2003-04-17 2005-12-28 가부시키가이샤 니콘 액침 리소그래피를 이용하기 위한 오토포커스 소자의광학적 배열
TWI295414B (en) 2003-05-13 2008-04-01 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
WO2004102646A1 (ja) 2003-05-15 2004-11-25 Nikon Corporation 露光装置及びデバイス製造方法
TW201515064A (zh) 2003-05-23 2015-04-16 尼康股份有限公司 曝光方法及曝光裝置以及元件製造方法
TWI474380B (zh) * 2003-05-23 2015-02-21 尼康股份有限公司 A method of manufacturing an exposure apparatus and an element
WO2004107417A1 (ja) 2003-05-28 2004-12-09 Nikon Corporation 露光方法及び露光装置、並びにデバイス製造方法
TWI442694B (zh) * 2003-05-30 2014-06-21 Ａｓｍｌ荷蘭公司 微影裝置及元件製造方法
US7213963B2 (en) 2003-06-09 2007-05-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7317504B2 (en) 2004-04-08 2008-01-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3104396B1 (en) 2003-06-13 2018-03-21 Nikon Corporation Exposure method, substrate stage, exposure apparatus, and device manufacturing method
KR101476087B1 (ko) 2003-06-19 2014-12-23 가부시키가이샤 니콘 노광 장치 및 디바이스 제조방법
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US6809794B1 (en) * 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
DE60308161T2 (de) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
WO2005006026A2 (en) 2003-07-01 2005-01-20 Nikon Corporation Using isotopically specified fluids as optical elements
EP2843472B1 (en) 2003-07-08 2016-12-07 Nikon Corporation Wafer table for immersion lithography
EP1643543B1 (en) 2003-07-09 2010-11-24 Nikon Corporation Exposure apparatus and method for manufacturing device
EP2264531B1 (en) 2003-07-09 2013-01-16 Nikon Corporation Exposure apparatus and device manufacturing method
WO2005006418A1 (ja) 2003-07-09 2005-01-20 Nikon Corporation 露光装置及びデバイス製造方法
JP4524669B2 (ja) 2003-07-25 2010-08-18 株式会社ニコン 投影光学系の検査方法および検査装置
US7326522B2 (en) 2004-02-11 2008-02-05 Asml Netherlands B.V. Device manufacturing method and a substrate
EP1503244A1 (en) 2003-07-28 2005-02-02 ASML Netherlands B.V. Lithographic projection apparatus and device manufacturing method
KR20190002749A (ko) * 2003-07-28 2019-01-08 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법, 그리고 노광 장치의 제어 방법
US7175968B2 (en) 2003-07-28 2007-02-13 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method and a substrate
US7779781B2 (en) 2003-07-31 2010-08-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7700267B2 (en) * 2003-08-11 2010-04-20 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
US7579135B2 (en) * 2003-08-11 2009-08-25 Taiwan Semiconductor Manufacturing Company, Ltd. Lithography apparatus for manufacture of integrated circuits
US7061578B2 (en) * 2003-08-11 2006-06-13 Advanced Micro Devices, Inc. Method and apparatus for monitoring and controlling imaging in immersion lithography systems
US6844206B1 (en) * 2003-08-21 2005-01-18 Advanced Micro Devices, Llp Refractive index system monitor and control for immersion lithography
TWI263859B (en) 2003-08-29 2006-10-11 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
KR101419192B1 (ko) 2003-08-29 2014-07-15 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
EP1660925B1 (en) 2003-09-03 2015-04-29 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
JP4444920B2 (ja) 2003-09-19 2010-03-31 株式会社ニコン 露光装置及びデバイス製造方法
DE60302897T2 (de) 2003-09-29 2006-08-03 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung einer Vorrichtung
KR101498437B1 (ko) 2003-09-29 2015-03-03 가부시키가이샤 니콘 노광장치, 노광방법 및 디바이스 제조방법
EP1672681B8 (en) 2003-10-08 2011-09-21 Miyagi Nikon Precision Co., Ltd. Exposure apparatus, substrate carrying method, exposure method, and method for producing device
JP2005136364A (ja) 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
KR20060126949A (ko) 2003-10-08 2006-12-11 가부시키가이샤 니콘 기판 반송 장치와 기판 반송 방법, 노광 장치와 노광 방법,및 디바이스 제조 방법
TW200514138A (en) 2003-10-09 2005-04-16 Nippon Kogaku Kk Exposure equipment and exposure method, manufacture method of component
EP1524557A1 (en) 2003-10-15 2005-04-20 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7352433B2 (en) 2003-10-28 2008-04-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7411653B2 (en) 2003-10-28 2008-08-12 Asml Netherlands B.V. Lithographic apparatus
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP3370115A1 (en) 2003-12-03 2018-09-05 Nikon Corporation Exposure apparatus, exposure method and method for producing a device
KR101281397B1 (ko) 2003-12-15 2013-07-02 가부시키가이샤 니콘 스테이지 장치, 노광 장치, 및 노광 방법
US7394521B2 (en) 2003-12-23 2008-07-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN1938646B (zh) 2004-01-20 2010-12-15 卡尔蔡司Smt股份公司 曝光装置和用于投影透镜的测量装置
US7589822B2 (en) 2004-02-02 2009-09-15 Nikon Corporation Stage drive method and stage unit, exposure apparatus, and device manufacturing method
JP4506674B2 (ja) 2004-02-03 2010-07-21 株式会社ニコン 露光装置及びデバイス製造方法
US7050146B2 (en) * 2004-02-09 2006-05-23 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US8488102B2 (en) * 2004-03-18 2013-07-16 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion fluid for immersion lithography, and method of performing immersion lithography
KR101250155B1 (ko) 2004-03-25 2013-04-05 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7898642B2 (en) 2004-04-14 2011-03-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1747499A2 (en) 2004-05-04 2007-01-31 Nikon Corporation Apparatus and method for providing fluid for immersion lithography
US7616383B2 (en) 2004-05-18 2009-11-10 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
CN100594430C (zh) 2004-06-04 2010-03-17 卡尔蔡司Smt股份公司 用于测量光学成像系统的图像质量的系统
KR101421915B1 (ko) * 2004-06-09 2014-07-22 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7463330B2 (en) 2004-07-07 2008-12-09 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1780772B1 (en) 2004-07-12 2009-09-02 Nikon Corporation Exposure equipment and device manufacturing method
US8305553B2 (en) 2004-08-18 2012-11-06 Nikon Corporation Exposure apparatus and device manufacturing method
US7701550B2 (en) 2004-08-19 2010-04-20 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060044533A1 (en) * 2004-08-27 2006-03-02 Asmlholding N.V. System and method for reducing disturbances caused by movement in an immersion lithography system
WO2006041086A1 (ja) * 2004-10-13 2006-04-20 Nikon Corporation 露光装置、露光方法及びデバイス製造方法
US7158896B1 (en) * 2004-11-01 2007-01-02 Advanced Micro Devices, Inc. Real time immersion medium control using scatterometry
US8029186B2 (en) 2004-11-05 2011-10-04 International Business Machines Corporation Method for thermal characterization under non-uniform heat load
US8547521B1 (en) * 2004-12-01 2013-10-01 Advanced Micro Devices, Inc. Systems and methods that control liquid temperature in immersion lithography to maintain temperature gradient to reduce turbulence
US7289193B1 (en) * 2004-12-01 2007-10-30 Advanced Micro Devices, Inc. Frame structure for turbulence control in immersion lithography
US7397533B2 (en) 2004-12-07 2008-07-08 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7880860B2 (en) 2004-12-20 2011-02-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE602006012746D1 (de) 2005-01-14 2010-04-22 Asml Netherlands Bv Lithografische Vorrichtung und Herstellungsverfahren
SG124351A1 (en) 2005-01-14 2006-08-30 Asml Netherlands Bv Lithographic apparatus and device manufacturing method
US8692973B2 (en) 2005-01-31 2014-04-08 Nikon Corporation Exposure apparatus and method for producing device
KR20180125636A (ko) 2005-01-31 2018-11-23 가부시키가이샤 니콘 노광 장치 및 디바이스 제조 방법
US7282701B2 (en) 2005-02-28 2007-10-16 Asml Netherlands B.V. Sensor for use in a lithographic apparatus
USRE43576E1 (en) 2005-04-08 2012-08-14 Asml Netherlands B.V. Dual stage lithographic apparatus and device manufacturing method
US20060232753A1 (en) * 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
JP2006319064A (ja) * 2005-05-11 2006-11-24 Canon Inc 測定装置、露光方法及び装置
FR2890742B1 (fr) * 2005-09-12 2007-11-30 Production Et De Rech S Appliq Equipement et procede de surveillance d'un dispositif lithographique a immersion.
JP2007103841A (ja) * 2005-10-07 2007-04-19 Toshiba Corp 半導体装置の製造方法
US7773195B2 (en) * 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
US8125610B2 (en) 2005-12-02 2012-02-28 ASML Metherlands B.V. Method for preventing or reducing contamination of an immersion type projection apparatus and an immersion type lithographic apparatus
US7649611B2 (en) 2005-12-30 2010-01-19 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
DE102006021797A1 (de) 2006-05-09 2007-11-15 Carl Zeiss Smt Ag Optische Abbildungseinrichtung mit thermischer Dämpfung
US20070296937A1 (en) * 2006-06-26 2007-12-27 International Business Machines Corporation Illumination light in immersion lithography stepper for particle or bubble detection
KR100763334B1 (ko) 2006-08-03 2007-10-04 삼성전자주식회사 이머젼 매질을 모니터링하는 유니트를 구비하는 이머젼포토리쏘그라피 장비 및 이를 사용하는 이머젼포토리쏘그라피 공정을 모니터링하는 방법
US8045135B2 (en) 2006-11-22 2011-10-25 Asml Netherlands B.V. Lithographic apparatus with a fluid combining unit and related device manufacturing method
US7995185B2 (en) 2006-12-07 2011-08-09 Asml Holding N.V. Systems and methods for thermally-induced aberration correction in immersion lithography
US8237911B2 (en) 2007-03-15 2012-08-07 Nikon Corporation Apparatus and methods for keeping immersion fluid adjacent to an optical assembly during wafer exchange in an immersion lithography machine
NL1035970A1 (nl) * 2007-09-28 2009-04-03 Asml Holding Nv Lithographic Apparatus and Device Manufacturing Method.
KR20100135215A (ko) * 2008-04-30 2010-12-24 가부시키가이샤 니콘 노광 장치 및 노광 방법과, 디바이스 제조 방법
US9176393B2 (en) 2008-05-28 2015-11-03 Asml Netherlands B.V. Lithographic apparatus and a method of operating the apparatus
EP2381310B1 (en) 2010-04-22 2015-05-06 ASML Netherlands BV Fluid handling structure and lithographic apparatus
CN103885301B (zh) * 2014-03-21 2015-09-16 浙江大学 浸没式光刻机中浸液传送系统的控制时序的模型匹配方法
US11821838B1 (en) * 2020-06-01 2023-11-21 Jean-Claude Diels Spectroscopy in frequency, time, and position with correlated frequency combs

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPS57153433A (en) * 1981-03-18 1982-09-22 Hitachi Ltd Manufacturing device for semiconductor
IL66127A (en) * 1982-06-24 1987-11-30 Israel State Method and apparatus for measuring the index of refraction of fluids
US4670637A (en) * 1985-02-11 1987-06-02 The United States Of America As Represented By The Secretary Of The Army Method and apparatus for transmitting a laser signal through fog
US5151752A (en) * 1988-06-16 1992-09-29 Asahi Kogaku Kogyo K.K. Method of measuring refractive indices of lens and sample liquid
JP2753930B2 (ja) 1992-11-27 1998-05-20 キヤノン株式会社 液浸式投影露光装置
US5422714A (en) * 1993-06-07 1995-06-06 Corning Incorporated Device for comparing the refractive indices of an optical immersion liquid and a reference glass
GB9324926D0 (en) * 1993-12-04 1994-01-26 Renishaw Plc Combined interferometer and refractometer
JP2982720B2 (ja) * 1996-04-26 1999-11-29 日本電気株式会社 パーティクルモニター装置およびこれを具備した無塵化プロセス装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
US6133995A (en) * 1997-05-09 2000-10-17 Sysmex Corporation Particle measuring apparatus
US5900354A (en) 1997-07-03 1999-05-04 Batchelder; John Samuel Method for optical inspection and lithography
US6241827B1 (en) * 1998-02-17 2001-06-05 Tokyo Electron Limited Method for cleaning a workpiece
JP3833810B2 (ja) * 1998-03-04 2006-10-18 株式会社日立製作所 半導体の製造方法並びにプラズマ処理方法およびその装置
DE10025789A1 (de) 2000-05-19 2001-11-22 Schmidt & Haensch Gmbh & Co Op Refraktometer
WO2002091078A1 (en) 2001-05-07 2002-11-14 Massachusetts Institute Of Technology Methods and apparatus employing an index matching medium
EP1489461A1 (en) 2003-06-11 2004-12-22 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
EP1486827B1 (en) 2003-06-11 2011-11-02 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
WO2005006026A2 (en) 2003-07-01 2005-01-20 Nikon Corporation Using isotopically specified fluids as optical elements

Similar Documents

Publication Publication Date Title
JP2007500449A5 (https=)
JP2007502539A5 (https=)
US20020155389A1 (en) Inverse resist coating process
KR101295203B1 (ko) 2차원 타겟을 이용한 리소그래피 포커스 및 조사량 측정
JP2008171960A5 (https=)
JP2006024939A5 (https=)
US7006209B2 (en) Method and apparatus for monitoring and controlling imaging in immersion lithography systems
JP2009088542A5 (https=)
JP2008199034A5 (https=)
TW200426363A (en) Method and device for measuring contamination of a surface of a component of a lithographic apparatus
TW200840988A (en) A method of measurement, an inspection apparatus and a lithographic apparatus
EP2378273A3 (en) System and method for double sided optical inspection of thin film disks or wafers
TWI243970B (en) Lithographic apparatus comprising a gas flushing system
KR20050019045A (ko) 리소그래피 장치 및 장치조정방법
WO2002009163A1 (en) Flare measuring method and flare measuring device, exposure method and exposure system, method of adjusting exposure system
TW201118968A (en) Inspection method and apparatus
JP2009021589A (ja) リソグラフィ装置およびデバイス製造方法
KR101890784B1 (ko) 검사 방법과 장치 및 리소그래피 장치
TW200537238A (en) Lithographic apparatus and device manufacturing method
EP1705521A3 (en) Exposure apparatus and device manufacturing method
JP2005003691A5 (https=)
JP2008140794A5 (https=)
JP2005265600A5 (https=)
TW200802530A (en) Substrate-processing apparatus, substrate-processing method, substrate-processing program, and computer-readable recording medium recorded with such program
Ho et al. On control of resist film uniformity in the microlithography process