JP2007318108A5 - - Google Patents
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- Publication number
- JP2007318108A5 JP2007318108A5 JP2007115522A JP2007115522A JP2007318108A5 JP 2007318108 A5 JP2007318108 A5 JP 2007318108A5 JP 2007115522 A JP2007115522 A JP 2007115522A JP 2007115522 A JP2007115522 A JP 2007115522A JP 2007318108 A5 JP2007318108 A5 JP 2007318108A5
- Authority
- JP
- Japan
- Prior art keywords
- region
- isolation region
- element isolation
- impurity
- channel formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002955 isolation Methods 0.000 claims 37
- 239000012535 impurity Substances 0.000 claims 18
- 239000004065 semiconductor Substances 0.000 claims 12
- 230000015572 biosynthetic process Effects 0.000 claims 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 3
- 229910052799 carbon Inorganic materials 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 239000001301 oxygen Substances 0.000 claims 3
- 229910052760 oxygen Inorganic materials 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- 239000007789 gas Substances 0.000 claims 2
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007115522A JP5188095B2 (ja) | 2006-04-28 | 2007-04-25 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006126984 | 2006-04-28 | ||
| JP2006126984 | 2006-04-28 | ||
| JP2007115522A JP5188095B2 (ja) | 2006-04-28 | 2007-04-25 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007318108A JP2007318108A (ja) | 2007-12-06 |
| JP2007318108A5 true JP2007318108A5 (enExample) | 2010-06-17 |
| JP5188095B2 JP5188095B2 (ja) | 2013-04-24 |
Family
ID=38851655
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007115522A Expired - Fee Related JP5188095B2 (ja) | 2006-04-28 | 2007-04-25 | 半導体装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5188095B2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5486166B2 (ja) * | 2008-06-16 | 2014-05-07 | 株式会社豊田中央研究所 | 半導体装置とその製造方法 |
| US8415751B2 (en) * | 2010-12-30 | 2013-04-09 | Intel Corporation | Method to reduce contact resistance of N-channel transistors by using a III-V semiconductor interlayer in source and drain |
| JP6448503B2 (ja) * | 2015-09-10 | 2019-01-09 | 東芝メモリ株式会社 | 不揮発性半導体記憶装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5278077A (en) * | 1993-03-10 | 1994-01-11 | Sharp Microelectronics Technology, Inc. | Pin-hole patch method for implanted dielectric layer |
| JPH0832072A (ja) * | 1994-07-13 | 1996-02-02 | Fuji Xerox Co Ltd | 半導体装置 |
| KR0154292B1 (ko) * | 1995-06-20 | 1998-12-01 | 김주용 | 반도체 소자의 소자분리막 형성방법 |
| JP2005129635A (ja) * | 2003-10-22 | 2005-05-19 | Seiko Epson Corp | Ｓｏｉ半導体集積回路装置及びその製造方法 |
-
2007
- 2007-04-25 JP JP2007115522A patent/JP5188095B2/ja not_active Expired - Fee Related
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