JP2007311785A5 - - Google Patents

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Publication number
JP2007311785A5
JP2007311785A5 JP2007121808A JP2007121808A JP2007311785A5 JP 2007311785 A5 JP2007311785 A5 JP 2007311785A5 JP 2007121808 A JP2007121808 A JP 2007121808A JP 2007121808 A JP2007121808 A JP 2007121808A JP 2007311785 A5 JP2007311785 A5 JP 2007311785A5
Authority
JP
Japan
Prior art keywords
pattern
integrated circuit
semiconductor integrated
interlayer insulating
upper electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2007121808A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007311785A (ja
Filing date
Publication date
Priority claimed from KR1020060045712A external-priority patent/KR100827437B1/ko
Application filed filed Critical
Publication of JP2007311785A publication Critical patent/JP2007311785A/ja
Publication of JP2007311785A5 publication Critical patent/JP2007311785A5/ja
Pending legal-status Critical Current

Links

JP2007121808A 2006-05-22 2007-05-02 Ｍｉｍキャパシタを含む半導体集積回路素子およびその製造方法 Pending JP2007311785A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060045712A KR100827437B1 (ko) 2006-05-22 2006-05-22 Ｍｉｍ 커패시터를 구비하는 반도체 집적 회로 장치 및이의 제조 방법
US11/588,575 US7888773B2 (en) 2006-05-22 2006-10-27 Semiconductor integrated circuit device having MIM capacitor and method of fabricating the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2013036884A Division JP5629795B2 (ja) 2006-05-22 2013-02-27 Ｍｉｍキャパシタを含む半導体集積回路素子およびその製造方法

Publications (2)

Publication Number Publication Date
JP2007311785A JP2007311785A (ja) 2007-11-29
JP2007311785A5 true JP2007311785A5 (enExample) 2010-06-24

Family

ID=38844300

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007121808A Pending JP2007311785A (ja) 2006-05-22 2007-05-02 Ｍｉｍキャパシタを含む半導体集積回路素子およびその製造方法

Country Status (1)

Country Link
JP (1) JP2007311785A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5566003B2 (ja) * 2007-11-08 2014-08-06 スパンション エルエルシー 半導体装置およびその製造方法
US10608076B2 (en) * 2017-03-22 2020-03-31 Advanced Micro Devices, Inc. Oscillating capacitor architecture in polysilicon for improved capacitance

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3127908B2 (ja) * 1998-11-20 2001-01-29 日本電気株式会社 半導体装置の製造方法

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