JP2005136436A5 - - Google Patents
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- Publication number
- JP2005136436A5 JP2005136436A5 JP2004381000A JP2004381000A JP2005136436A5 JP 2005136436 A5 JP2005136436 A5 JP 2005136436A5 JP 2004381000 A JP2004381000 A JP 2004381000A JP 2004381000 A JP2004381000 A JP 2004381000A JP 2005136436 A5 JP2005136436 A5 JP 2005136436A5
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- semiconductor device
- insulated gate
- insulating film
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 57
- 239000012212 insulator Substances 0.000 claims 42
- 238000004519 manufacturing process Methods 0.000 claims 18
- 239000000758 substrate Substances 0.000 claims 14
- 238000009792 diffusion process Methods 0.000 claims 12
- 230000002093 peripheral effect Effects 0.000 claims 9
- 238000000034 method Methods 0.000 claims 7
- 239000004020 conductor Substances 0.000 claims 6
- 238000005530 etching Methods 0.000 claims 6
- 239000011810 insulating material Substances 0.000 claims 4
- 239000011229 interlayer Substances 0.000 claims 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 3
- 238000000151 deposition Methods 0.000 claims 3
- 239000000463 material Substances 0.000 claims 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims 3
- 238000009413 insulation Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004381000A JP2005136436A (ja) | 2004-12-28 | 2004-12-28 | 半導体装置およびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2004381000A JP2005136436A (ja) | 2004-12-28 | 2004-12-28 | 半導体装置およびその製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9044244A Division JPH10242420A (ja) | 1997-02-27 | 1997-02-27 | 半導体装置およびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2005136436A JP2005136436A (ja) | 2005-05-26 |
| JP2005136436A5 true JP2005136436A5 (enExample) | 2006-05-25 |
Family
ID=34651078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004381000A Pending JP2005136436A (ja) | 2004-12-28 | 2004-12-28 | 半導体装置およびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2005136436A (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5061429B2 (ja) * | 2005-07-01 | 2012-10-31 | ソニー株式会社 | 半導体装置の製造方法 |
| KR100634459B1 (ko) | 2005-08-12 | 2006-10-16 | 삼성전자주식회사 | 다층 트랜지스터 구조를 가지는 반도체 장치 및 그제조방법 |
-
2004
- 2004-12-28 JP JP2004381000A patent/JP2005136436A/ja active Pending
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