JP2005136436A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2005136436A
JP2005136436A JP2004381000A JP2004381000A JP2005136436A JP 2005136436 A JP2005136436 A JP 2005136436A JP 2004381000 A JP2004381000 A JP 2004381000A JP 2004381000 A JP2004381000 A JP 2004381000A JP 2005136436 A JP2005136436 A JP 2005136436A
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Japan
Prior art keywords
insulator
semiconductor device
insulating film
region
gate electrode
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Pending
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JP2004381000A
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Japanese (ja)
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JP2005136436A5 (enExample
Inventor
Satoshi Inaba
聡 稲葉
Kazumasa Sunochi
一正 須之内
Toru Ozaki
徹 尾崎
Hirosuke Koyama
裕亮 幸山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
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Toshiba Corp
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Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP2004381000A priority Critical patent/JP2005136436A/ja
Publication of JP2005136436A publication Critical patent/JP2005136436A/ja
Publication of JP2005136436A5 publication Critical patent/JP2005136436A5/ja
Pending legal-status Critical Current

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  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP2004381000A 2004-12-28 2004-12-28 半導体装置およびその製造方法 Pending JP2005136436A (ja)

Priority Applications (1)

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JP2004381000A JP2005136436A (ja) 2004-12-28 2004-12-28 半導体装置およびその製造方法

Applications Claiming Priority (1)

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JP2004381000A JP2005136436A (ja) 2004-12-28 2004-12-28 半導体装置およびその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP9044244A Division JPH10242420A (ja) 1997-02-27 1997-02-27 半導体装置およびその製造方法

Publications (2)

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JP2005136436A true JP2005136436A (ja) 2005-05-26
JP2005136436A5 JP2005136436A5 (enExample) 2006-05-25

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ID=34651078

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JP2004381000A Pending JP2005136436A (ja) 2004-12-28 2004-12-28 半導体装置およびその製造方法

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JP (1) JP2005136436A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100634459B1 (ko) 2005-08-12 2006-10-16 삼성전자주식회사 다층 트랜지스터 구조를 가지는 반도체 장치 및 그제조방법
JP2007013006A (ja) * 2005-07-01 2007-01-18 Sony Corp 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007013006A (ja) * 2005-07-01 2007-01-18 Sony Corp 半導体装置の製造方法
KR100634459B1 (ko) 2005-08-12 2006-10-16 삼성전자주식회사 다층 트랜지스터 구조를 가지는 반도체 장치 및 그제조방법
US7592625B2 (en) 2005-08-12 2009-09-22 Samsung Electronics Co., Ltd. Semiconductor transistor with multi-level transistor structure and method of fabricating the same

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