JP2007311785A - Ｍｉｍキャパシタを含む半導体集積回路素子およびその製造方法 - Google Patents

Ｍｉｍキャパシタを含む半導体集積回路素子およびその製造方法 Download PDF

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Publication number
JP2007311785A
JP2007311785A JP2007121808A JP2007121808A JP2007311785A JP 2007311785 A JP2007311785 A JP 2007311785A JP 2007121808 A JP2007121808 A JP 2007121808A JP 2007121808 A JP2007121808 A JP 2007121808A JP 2007311785 A JP2007311785 A JP 2007311785A
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Japan
Prior art keywords
integrated circuit
semiconductor integrated
circuit device
upper electrode
interlayer insulating
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JP2007121808A
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Japanese (ja)
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JP2007311785A5 (enExample
Inventor
Seok-Jun Won
▲セキ▼ 俊 元
Jung Min Park
廷 ▲ミン▼ 朴
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Priority claimed from KR1020060045712A external-priority patent/KR100827437B1/ko
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2007311785A publication Critical patent/JP2007311785A/ja
Publication of JP2007311785A5 publication Critical patent/JP2007311785A5/ja
Pending legal-status Critical Current

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  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2007121808A 2006-05-22 2007-05-02 Ｍｉｍキャパシタを含む半導体集積回路素子およびその製造方法 Pending JP2007311785A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060045712A KR100827437B1 (ko) 2006-05-22 2006-05-22 Ｍｉｍ 커패시터를 구비하는 반도체 집적 회로 장치 및이의 제조 방법
US11/588,575 US7888773B2 (en) 2006-05-22 2006-10-27 Semiconductor integrated circuit device having MIM capacitor and method of fabricating the same

Related Child Applications (1)

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JP2013036884A Division JP5629795B2 (ja) 2006-05-22 2013-02-27 Ｍｉｍキャパシタを含む半導体集積回路素子およびその製造方法

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JP2007311785A true JP2007311785A (ja) 2007-11-29
JP2007311785A5 JP2007311785A5 (enExample) 2010-06-24

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JP2007121808A Pending JP2007311785A (ja) 2006-05-22 2007-05-02 Ｍｉｍキャパシタを含む半導体集積回路素子およびその製造方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009117722A (ja) * 2007-11-08 2009-05-28 Spansion Llc 半導体装置およびその製造方法
JP2020515071A (ja) * 2017-03-22 2020-05-21 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｍｉｃｒｏ Ｄｅｖｉｃｅｓ Ｉｎｃｏｒｐｏｒａｔｅｄ キャパシタンスを改善するためのポリシリコンにおける振動キャパシタアーキテクチャ

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000156467A (ja) * 1998-11-20 2000-06-06 Nec Corp 半導体装置の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000156467A (ja) * 1998-11-20 2000-06-06 Nec Corp 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009117722A (ja) * 2007-11-08 2009-05-28 Spansion Llc 半導体装置およびその製造方法
JP2020515071A (ja) * 2017-03-22 2020-05-21 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｍｉｃｒｏ Ｄｅｖｉｃｅｓ Ｉｎｃｏｒｐｏｒａｔｅｄ キャパシタンスを改善するためのポリシリコンにおける振動キャパシタアーキテクチャ
JP7094297B2 (ja) 2017-03-22 2022-07-01 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド キャパシタンスを改善するためのポリシリコンにおける振動キャパシタアーキテクチャ

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