JP2007294774A - 半導体レーザ素子およびその製造方法 - Google Patents
半導体レーザ素子およびその製造方法 Download PDFInfo
- Publication number
- JP2007294774A JP2007294774A JP2006122777A JP2006122777A JP2007294774A JP 2007294774 A JP2007294774 A JP 2007294774A JP 2006122777 A JP2006122777 A JP 2006122777A JP 2006122777 A JP2006122777 A JP 2006122777A JP 2007294774 A JP2007294774 A JP 2007294774A
- Authority
- JP
- Japan
- Prior art keywords
- diffraction grating
- layer
- semiconductor laser
- laser device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 34
- 238000005530 etching Methods 0.000 claims abstract description 23
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 11
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 9
- 150000002367 halogens Chemical class 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 26
- 238000005253 cladding Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 6
- 229910052785 arsenic Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims 2
- 125000006850 spacer group Chemical group 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 10
- 230000010355 oscillation Effects 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000000630 rising effect Effects 0.000 abstract description 2
- 230000008569 process Effects 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 238000001312 dry etching Methods 0.000 description 9
- 238000001039 wet etching Methods 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 239000012808 vapor phase Substances 0.000 description 5
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000010894 electron beam technology Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- 238000005979 thermal decomposition reaction Methods 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000011259 mixed solution Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- HJUGFYREWKUQJT-UHFFFAOYSA-N tetrabromomethane Chemical compound BrC(Br)(Br)Br HJUGFYREWKUQJT-UHFFFAOYSA-N 0.000 description 2
- VZGDMQKNWNREIO-UHFFFAOYSA-N tetrachloromethane Chemical compound ClC(Cl)(Cl)Cl VZGDMQKNWNREIO-UHFFFAOYSA-N 0.000 description 2
- 238000000347 anisotropic wet etching Methods 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 229940050176 methyl chloride Drugs 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/1231—Grating growth or overgrowth details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34306—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
Landscapes
- Physics & Mathematics (AREA)
- Nanotechnology (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Semiconductor Lasers (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【解決手段】分布帰還型または分布反射型の半導体レーザ素子において、回折格子を埋め込み再成長する直前に、反応炉内にハロゲン系ガスを導入し、それぞれの側壁が少なくとも2つ以上の結晶面を有し、かつ(100)面に平行な底辺に対する上辺の導波路方向における長さの比が0〜0.3となるように回折格子のエッチングを行い、かつ再成長の昇温時に回折格子の側面および回折格子のストライプ間の溝部に形成する反応生成物を除去することにより、回折格子の高さを低減し、かつ正弦波形状を得ることにより素子のκLを低減することができ、これによって発振閾値、光出力効率の改善が可能となる。
【選択図】図1
Description
合物半導体層からなることを特徴とする。
本実施の形態では、κを低減するため、第一の手段として、第2クラッド層の再成長後の回折格子の形状を正弦波形状とする。正弦波形状は、完全なサインカーブが理想であるが、現実的にはある程度の矩形形状を残した状態となる。
図3は、本発明の実施の形態1である半導体レーザ素子の製造方法における作製工程図を示す。
図4は、本発明の実施の形態2である半導体レーザ素子の製造方法における作製工程図を示す。本実施の形態では、回折格子を活性層の下側に配置した半導体レーザ素子の製造方法について示す。
Claims (8)
- 分布帰還型または分布反射型の半導体レーザ素子であって、
導波路方向と垂直にストライプ状に形成された回折格子を有し、
前記回折格子は、それぞれの側壁が少なくとも2つ以上の結晶面を有し、かつ(100)面に平行な底辺に対する上辺の導波路方向における長さの比が0〜0.3であることを特徴とする半導体レーザ素子。 - 請求項1記載の半導体レーザ素子において、
前記回折格子は、少なくとも、In、Ga、As、Pの元素を1つ含むIII−V族化合物
半導体層からなることを特徴とする半導体レーザ素子。 - 半導体基板上に、第1クラッド層、活性層、回折格子層をエピタキシャル成長により積層する第1の工程と、
前記回折格子層のエッチング加工により回折格子を形成する第2の工程と、
前記回折格子を前記第1クラッド層と導電型の異なる第2クラッド層でエピタキシャル成長により埋め込み再成長する第3の工程を含み、
前記第3の工程の直前に、反応炉内にハロゲン系ガスを導入し、それぞれの側壁が少なくとも2つ以上の結晶面を有し、かつ(100)面に平行な底辺に対する上辺の導波路方向における長さの比が0〜0.3となるように前記回折格子のエッチングを行い、かつ再成長の昇温時に前記回折格子の側面および前記回折格子のストライプ間の溝部に形成する反応生成物を除去することを特徴とする半導体レーザ素子の製造方法。 - 請求項3記載の半導体レーザ素子の製造方法において、
前記第1の工程は、さらに前記第1クラッド層と前記活性層の間に第1光ガイド層を形成し、前記活性層と前記回折格子層の間に第2光ガイド層とスペーサ層を形成することを特徴とする半導体レーザ素子の製造方法。 - 請求項3記載の半導体レーザ素子の製造方法において、
前記回折格子層は、少なくとも、In、Ga、As、Pの元素を1つ含むIII−V族化合
物半導体層であることを特徴とする半導体レーザ素子の製造方法。 - 半導体基板上に、第1クラッド層、回折格子層をエピタキシャル成長により積層する第1の工程と、
前記回折格子層のエッチング加工により回折格子を形成する第2の工程と、
前記回折格子を前記第1クラッド層と導電型の同じ第2クラッド層でエピタキシャル成長により埋め込み、活性層を再成長する第3の工程を含み、
前記第3の工程の直前に、反応炉内にハロゲン系ガスを導入し、それぞれの側壁が少なくとも2つ以上の結晶面を有し、かつ(100)面に平行な底辺に対する上辺の導波路方向における長さの比が0〜0.3となるように前記回折格子のエッチングを行い、かつ再成長の昇温時に前記回折格子の側面および前記回折格子のストライプ間の溝部に形成する反応生成物を除去することを特徴とする半導体レーザ素子の製造方法。 - 請求項6記載の半導体レーザ素子の製造方法において、
前記第3の工程は、さらに前記第2クラッド層と前記活性層の間に第1光ガイド層を形成し、前記活性層の上部に第2光ガイド層と第3クラッド層を形成することを特徴とする半導体レーザ素子の製造方法。 - 請求項6記載の半導体レーザ素子の製造方法において、
前記回折格子層は、少なくとも、In、Ga、As、Pの元素を1つ含むIII−V族化合
物半導体層であることを特徴とする半導体レーザ素子の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006122777A JP4951267B2 (ja) | 2006-04-27 | 2006-04-27 | 半導体レーザ素子の製造方法 |
EP07003455.8A EP1850430B1 (en) | 2006-04-27 | 2007-02-19 | Method of manufacturing a semiconductor laser device |
US11/708,135 US20080013582A1 (en) | 2006-04-27 | 2007-02-20 | Semiconductor laser device and method of manufacturing the same |
US12/572,720 US7855093B2 (en) | 2006-04-27 | 2009-10-02 | Semiconductor laser device and method of manufacturing the same |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006122777A JP4951267B2 (ja) | 2006-04-27 | 2006-04-27 | 半導体レーザ素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007294774A true JP2007294774A (ja) | 2007-11-08 |
JP4951267B2 JP4951267B2 (ja) | 2012-06-13 |
Family
ID=38442608
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006122777A Active JP4951267B2 (ja) | 2006-04-27 | 2006-04-27 | 半導体レーザ素子の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20080013582A1 (ja) |
EP (1) | EP1850430B1 (ja) |
JP (1) | JP4951267B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010206121A (ja) * | 2009-03-06 | 2010-09-16 | Fujitsu Ltd | 半導体レーザ及びその製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100958719B1 (ko) * | 2007-12-12 | 2010-05-18 | 한국전자통신연구원 | 단일모드 발진을 위한 하이브리드 레이저 다이오드 및 그제조 방법 |
DE102008054217A1 (de) * | 2008-10-31 | 2010-05-06 | Osram Opto Semiconductors Gmbh | Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips |
CN104201566B (zh) * | 2014-08-22 | 2017-12-29 | 华中科技大学 | 一种具有高单纵模成品率的脊波导分布反馈半导体激光器 |
CN106785905A (zh) * | 2017-01-19 | 2017-05-31 | 桂林电子科技大学 | 一种基于布拉格相移光栅的电光调制器 |
US11133649B2 (en) * | 2019-06-21 | 2021-09-28 | Palo Alto Research Center Incorporated | Index and gain coupled distributed feedback laser |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6454790A (en) * | 1987-08-26 | 1989-03-02 | Matsushita Electric Ind Co Ltd | Distributed feedback type semiconductor laser |
JPH06252510A (ja) * | 1993-03-01 | 1994-09-09 | Canon Inc | 利得結合分布帰還型半導体レーザとその作製方法 |
JP2000058970A (ja) * | 1998-08-04 | 2000-02-25 | Toshiba Corp | 光機能素子及びその製造方法並びに光通信システム |
JP2005129833A (ja) * | 2003-10-27 | 2005-05-19 | Nec Kansai Ltd | 半導体レーザの製造方法 |
JP2005150181A (ja) * | 2003-11-12 | 2005-06-09 | Hitachi Ltd | 半導体レーザの製造方法 |
JP2006108278A (ja) * | 2004-10-04 | 2006-04-20 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62150794A (ja) * | 1985-12-24 | 1987-07-04 | Sony Corp | 分布帰還型半導体レ−ザ− |
JPS63265485A (ja) * | 1987-04-23 | 1988-11-01 | Sony Corp | 半導体レ−ザ |
JP3374878B2 (ja) * | 1994-09-02 | 2003-02-10 | 三菱電機株式会社 | 半導体エッチング方法 |
JP3751052B2 (ja) * | 1994-12-28 | 2006-03-01 | シャープ株式会社 | 集積型光制御素子およびその作製方法、並びにそれを備えた光集積回路素子および光集積回路装置 |
JP2924714B2 (ja) * | 1995-06-19 | 1999-07-26 | 日本電気株式会社 | 分布帰還型半導体レーザ素子 |
US5633193A (en) * | 1996-05-22 | 1997-05-27 | Lucent Technologies Inc. | Method of making an InP-based device comprising semiconductor growth on a non-planar surface |
EP1043818B1 (en) * | 1999-04-09 | 2011-07-20 | Mitsui Chemicals, Inc. | Semiconductor laser device, semiconductor laser module, rare-earth-element-doped optical fiber amplifier and fiber laser |
EP1265326B1 (en) * | 2000-03-13 | 2009-05-13 | Sharp Kabushiki Kaisha | Gain-coupled distributed feedback semiconductor laser device and production method therefor |
JP2001266389A (ja) * | 2000-03-23 | 2001-09-28 | Tdk Corp | 近接場光を用いる光ヘッド |
JP4031263B2 (ja) * | 2002-03-05 | 2008-01-09 | 三菱電機株式会社 | 半導体レーザ装置の製造方法 |
US6608855B1 (en) * | 2002-05-31 | 2003-08-19 | Applied Optoelectronics, Inc. | Single-mode DBR laser with improved phase-shift section |
-
2006
- 2006-04-27 JP JP2006122777A patent/JP4951267B2/ja active Active
-
2007
- 2007-02-19 EP EP07003455.8A patent/EP1850430B1/en active Active
- 2007-02-20 US US11/708,135 patent/US20080013582A1/en not_active Abandoned
-
2009
- 2009-10-02 US US12/572,720 patent/US7855093B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6454790A (en) * | 1987-08-26 | 1989-03-02 | Matsushita Electric Ind Co Ltd | Distributed feedback type semiconductor laser |
JPH06252510A (ja) * | 1993-03-01 | 1994-09-09 | Canon Inc | 利得結合分布帰還型半導体レーザとその作製方法 |
JP2000058970A (ja) * | 1998-08-04 | 2000-02-25 | Toshiba Corp | 光機能素子及びその製造方法並びに光通信システム |
JP2005129833A (ja) * | 2003-10-27 | 2005-05-19 | Nec Kansai Ltd | 半導体レーザの製造方法 |
JP2005150181A (ja) * | 2003-11-12 | 2005-06-09 | Hitachi Ltd | 半導体レーザの製造方法 |
JP2006108278A (ja) * | 2004-10-04 | 2006-04-20 | Matsushita Electric Ind Co Ltd | 半導体レーザ装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2010206121A (ja) * | 2009-03-06 | 2010-09-16 | Fujitsu Ltd | 半導体レーザ及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US7855093B2 (en) | 2010-12-21 |
US20100022043A1 (en) | 2010-01-28 |
EP1850430A2 (en) | 2007-10-31 |
EP1850430A3 (en) | 2009-12-16 |
JP4951267B2 (ja) | 2012-06-13 |
EP1850430B1 (en) | 2013-05-01 |
US20080013582A1 (en) | 2008-01-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3374878B2 (ja) | 半導体エッチング方法 | |
US5982804A (en) | Non-regrowth distributed feedback ridge semiconductor laser and method of manufacturing the same | |
JP5280614B2 (ja) | 単一のステップmocvdによって製造される導波格子を組み込んだ埋め込みヘテロ構造デバイス | |
JP5185537B2 (ja) | 光半導体装置およびその製造方法 | |
JP4951267B2 (ja) | 半導体レーザ素子の製造方法 | |
US6850550B2 (en) | Complex coupling MQW semiconductor laser | |
JP3204474B2 (ja) | 利得結合分布帰還型半導体レーザとその作製方法 | |
JP2007184491A (ja) | 分布帰還型半導体レーザ | |
JP4751124B2 (ja) | 半導体発光素子を作製する方法 | |
JP4899755B2 (ja) | 半導体光素子を作製する方法 | |
JP2005129833A (ja) | 半導体レーザの製造方法 | |
JP5217767B2 (ja) | 半導体レーザ及び半導体レーザの製造方法 | |
JP2010010284A (ja) | 集積型光半導体装置の製造方法及び集積型光半導体装置 | |
JP4151043B2 (ja) | 光半導体装置の製造方法 | |
JP2009194023A (ja) | 半導体光素子を作製する方法 | |
JP4992451B2 (ja) | 半導体レーザ、および半導体レーザを作製する方法 | |
US8846425B2 (en) | Diode laser and method for manufacturing a high-efficiency diode laser | |
JP2002057405A (ja) | 半導体レーザ装置及びその製造方法 | |
JP5205901B2 (ja) | 半導体レーザ素子の作製方法および半導体レーザ素子 | |
CN104078842A (zh) | 光学器件以及光学模块 | |
JP5108687B2 (ja) | 光半導体装置及びその製造方法 | |
JPH0642583B2 (ja) | 半導体レーザ装置 | |
JP2783163B2 (ja) | 分布帰還型半導体レーザおよびその製造方法 | |
JPH1022572A (ja) | 光ガイド層に回折格子が形成されている半導体装置 | |
JP5257296B2 (ja) | 光半導体装置及び光半導体装置の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20090108 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110217 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110301 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110425 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120214 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120312 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150316 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4951267 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |