JP2007287737A - 高平坦かつ高平滑なガラス基板の作製方法 - Google Patents
高平坦かつ高平滑なガラス基板の作製方法 Download PDFInfo
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- 239000011521 glass Substances 0.000 title claims abstract description 135
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 238000005498 polishing Methods 0.000 claims abstract description 109
- 238000009826 distribution Methods 0.000 claims abstract description 49
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
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- 238000003672 processing method Methods 0.000 claims description 30
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- 238000001020 plasma etching Methods 0.000 claims description 6
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- 238000003754 machining Methods 0.000 abstract description 19
- 239000007789 gas Substances 0.000 description 63
- 239000002002 slurry Substances 0.000 description 18
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- 239000008119 colloidal silica Substances 0.000 description 13
- 239000000523 sample Substances 0.000 description 11
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
- C03C15/02—Surface treatment of glass, not in the form of fibres or filaments, by etching for making a smooth surface
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C19/00—Surface treatment of glass, not in the form of fibres or filaments, by mechanical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/24—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass
- B24B7/242—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding or polishing glass for plate glass
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/005—Other surface treatment of glass not in the form of fibres or filaments by irradiation by atoms
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- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/006—Other surface treatment of glass not in the form of fibres or filaments by irradiation by plasma or corona discharge
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- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/06—Glass compositions containing silica with more than 90% silica by weight, e.g. quartz
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- C03C2201/00—Glass compositions
- C03C2201/06—Doped silica-based glasses
- C03C2201/30—Doped silica-based glasses containing metals
- C03C2201/40—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn
- C03C2201/42—Doped silica-based glasses containing metals containing transition metals other than rare earth metals, e.g. Zr, Nb, Ta or Zn containing titanium
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- C03C2204/00—Glasses, glazes or enamels with special properties
- C03C2204/08—Glass having a rough surface
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- Y10T428/00—Stock material or miscellaneous articles
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Abstract
【解決手段】ガラス基板に対して、加工前のガラス基板面の表面形状を測定する工程と、場所ごとに加工条件を変えて基板面内を加工する工程(第1の加工工程)と、第1の加工工程が施されたガラス基板表面を仕上げ研磨する工程(第2の加工工程)と、を備える加工をおこなって、高平坦かつ高平滑なガラス基板を生産性良く得る。このとき、第1の加工工程における基板面内のそれぞれの場所の加工条件は、加工前のガラス基板面の凹凸形状と、同様の基板を用いて別途測定された第2の加工工程による加工量の面内分布と、から決められた加工量から決められる。
【選択図】なし
Description
SF6:Ar:O2=0.1〜5%:9.9〜49.9%:50〜90%(SF6、ArおよびO2の混合ガス)
NF3:O2=0.1〜5%:95〜99.9%(NF3およびO2の混合ガス)
NF3:Ar:O2=0.1〜5%:9.9〜49.9%:50〜90%(NF3、ArおよびO2の混合ガス)
NF3:N2=0.1〜5%:95〜99.9%(NF3およびN2の混合ガス)
NF3:Ar:N2=0.1〜5%:9.9〜49.9%:50〜90%(NF3、ArおよびN2の混合ガス)。
E1(x,y)=S(x,y)−E2(x,y) (1)
すなわちあらかじめ加工前の基板面の目標加工面からの変位S(x,y)と、第2の加工工程による加工量E2(x,y)とを求めておけば、(1)式から求められる加工量E1(x,y)で第1の加工工程をおこなうことにより、高平坦な基板表面が得られる。
公知の方法で製造されたTiO2ドープ石英ガラス(TiO2ドープ量は7質量%)のインゴットを内周刃スライサーを用いて153mm角×厚さ6.75mmの板状に切断し、NC面取り機を用いて#120のダイアモンド砥石により面取り幅が0.2〜0.4mmになるよう面取り加工して、外径寸法が152mm角、厚さ6.75mmのTiO2ドープ石英ガラス製のガラス基板を作成した。このガラス基板に対して、機械研磨により予備研磨をおこなった。予備研磨後のガラス基板の表面を、G310Sフィゾー型レーザ干渉式平坦度測定機(Fujinon社製)を用いて142mm角のエリアを測定した結果を図1に示す。図1は、二次元形状のガラス基板上の点(x,y)に対して、平坦度S(x,y)を等高線間隔10nmでプロットしたグラフであり、PVは287nmであった。
加工条件は、
ソースガス:NF35%とO295%の混合ガス、
加速電圧:30kV、
イオン化電流:70μA、
ガスクラスタイオンビームのビーム径(FWHM値):6mm
とした。
研磨試験機 :浜井産業社製 両面24B研磨機
研磨パッド :カネボウ社製 ベラトリックスK7512
研磨常盤回転数:35rpm
研磨時間 :20分
研磨荷重 :51gf/cm2
希釈水 :純水(0.1μm以上異物濾過)
スラリー流量 :10リットル/min
研磨スラリー :平均一次粒径20nm未満のコロイダルシリカを20質量%含有
とした。仕上げ研磨をおこなった後の基板表面の平坦度を測定した結果を、同様にプロットしたグラフを図3に示す。平坦度はPVで186nmであった。また、仕上げ研磨後の基板表面の面粗さはRMSで0.07nmであった。第2の加工工程の前後のガラス基板面の平坦度すなわち表面形状の差から、第2の加工工程による加工量の面内分布E2(x,y)が求められる。求められた仕上げ加工(第2の加工工程)の加工量の面内分布E2(x,y)をプロットしたグラフを図4に示す。加工量の面内分布はPVが170nmであった。
仕上げ研磨後のガラス基板の平坦度はPVで0.097μmであって、面粗さはRMSで0.07nmであった。また、レーザーテック社製M1350により基板表面の有効部分である142mm×142mmの範囲内の欠点を調べたところ、ドライエッチング固有の欠点は認められず、また幅が60nm以上の凹状欠点が3個以下であり、幅60nm以上の凸状欠点は、検出されない。
例1と異なるロットのTiO2ドープ石英ガラス(TiO2ドープ量は7質量%)インゴットから、同様に152.0mm角、厚さ6.75mmで面取り幅0.2〜0.4mmで面取りされた正方形のTiO2ドープ石英ガラス基板を用意し、機械研磨により予備研磨をおこなった。これと同じロットの基板サンプルを用いて、蛍光X線分析により基板中のTiO2濃度分布を測定した。図9に基板中のTiO2濃度分布を、基板中心からの距離を横軸にとってプロットしたグラフを示す。
ソースガス:SF61.25%,O224%,Ar74.75%
加速電圧:30kV
イオン化電流:50μA
ビーム径(FWHM値):6mm
ドーズ量:6.2×1015個イオン/cm2
とした。
Y=0.0522X+1.0449 (2)。
T=W/(Y×Y0)
=W/{(0.0522X+1.0449)×Y0} (3)
(ここでY0はガラス中のTiO2濃度が0質量%のとき加工レートである)
とし、ガラス基板の部位ごとにガスクラスタイオンビームのスキャン速度を変化させてドーズ量を変えることにより、基板表面のそれぞれの場所の加工量を設定する。
T(x,y)
=E1(x,y)/{(0.0522・C(x,y)+1.0449)×Y0}
(4)
となる。ここでE1(x,y)は前述の(1)式により求められる。
Claims (5)
- ガラス基板の加工方法であって、
前記加工方法は、加工前の前記ガラス基板の基板面内の場所ごとに平坦度を測定する工程(平坦度分布測定工程)と、平坦度分布が測定された前記ガラス基板面を、基板面内の場所ごとに加工条件を変えて加工する工程(第1の加工工程)と、第1の加工工程が施された前記ガラス基板面を仕上げ研磨する工程(第2の加工工程)と、を備える、前記ガラス基板面を高平坦かつ高平滑に加工する加工方法であって、
第1の加工工程が、ガスクラスタイオンビームエッチング、プラズマエッチング、または磁気粘性流体研磨によりおこなわれるとともに、
第2の加工工程による加工量の面内分布が、同様のガラス基板を用いて別途測定されていて、
第1の加工工程における基板面内の場所ごとの加工条件が、平坦度分布測定工程で測定された加工前の基板面内の平坦度分布と、第2の加工工程による加工量の面内分布と、から求められた加工量から決められることを特徴とするガラス基板の加工方法。 - 前記ガラス基板はSiO2を主成分とする石英ガラスからなるガラス基板である請求項1に記載のガラス基板の加工方法。
- 前記石英ガラスはTiO2がドープされた低熱膨張の合成石英ガラスである請求項2に記載のガラス基板の加工方法。
- 前記ガラス基板の加工方法において、
ガラス基板面内のドーパント濃度分布と、ガラス基板のドーパント濃度に対する第1の加工工程の加工レートとの関係と、が、第1の加工工程をおこなう前に別途求められていて、
第1の加工工程における基板面内の場所ごとの加工条件が、第2の加工工程による加工量の面内分布と、平坦度分布測定工程で測定された加工前のガラス基板面の平坦度分布と、から求められた加工量と、ドーパント濃度の分布と、第1の加工工程の加工レートとドーパント濃度との関係と、から決められる、請求項3に記載のガラス基板の加工方法。 - 請求項1〜4のいずれか1項に記載のガラス基板の加工方法により加工された、基板面の平坦度がPVで0.05μm以下、原子間力顕微鏡で測定した面粗さがRMSで0.25nm以下である高平坦かつ高平滑なガラス基板。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006109937A JP4997815B2 (ja) | 2006-04-12 | 2006-04-12 | 高平坦かつ高平滑なガラス基板の作製方法 |
TW096112721A TWI406832B (zh) | 2006-04-12 | 2007-04-11 | 玻璃基板的處理方法、和高平坦且高光滑的玻璃基板 |
EP07741818.4A EP2007691B1 (en) | 2006-04-12 | 2007-04-11 | Processing method of glass substrate, and highly flat and highly smooth glass substrate |
KR1020087024824A KR101366422B1 (ko) | 2006-04-12 | 2007-04-11 | 유리 기판의 제조 방법 및 고평탄하고 고평활한 유리 기판 |
PCT/JP2007/058382 WO2007119860A1 (en) | 2006-04-12 | 2007-04-11 | Processing method of glass substrate, and highly flat and highly smooth glass substrate |
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Also Published As
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JP4997815B2 (ja) | 2012-08-08 |
EP2007691B1 (en) | 2014-05-07 |
US20090017257A1 (en) | 2009-01-15 |
KR101366422B1 (ko) | 2014-02-24 |
TWI406832B (zh) | 2013-09-01 |
WO2007119860A1 (en) | 2007-10-25 |
EP2007691A1 (en) | 2008-12-31 |
KR20080111468A (ko) | 2008-12-23 |
TW200744968A (en) | 2007-12-16 |
US8137574B2 (en) | 2012-03-20 |
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