JP2007281200A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法 Download PDFInfo
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- JP2007281200A JP2007281200A JP2006105741A JP2006105741A JP2007281200A JP 2007281200 A JP2007281200 A JP 2007281200A JP 2006105741 A JP2006105741 A JP 2006105741A JP 2006105741 A JP2006105741 A JP 2006105741A JP 2007281200 A JP2007281200 A JP 2007281200A
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- 238000000034 method Methods 0.000 title claims abstract description 61
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 42
- 239000010410 layer Substances 0.000 claims abstract description 254
- 239000011229 interlayer Substances 0.000 claims abstract description 78
- 238000005530 etching Methods 0.000 claims abstract description 34
- 238000005498 polishing Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 230000004888 barrier function Effects 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 239000000758 substrate Substances 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 238000009792 diffusion process Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 238000004380 ashing Methods 0.000 description 7
- 238000001459 lithography Methods 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 239000005368 silicate glass Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 2
- 238000007687 exposure technique Methods 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- -1 phosphorus ions Chemical class 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
- H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
【解決手段】 第一の層間絶縁層10a上に、第一の直線状開口パターン14を有する第一のマスク層13を形成し、第一の層間絶縁層10a及び第一のマスク層13上に、第一の直線状開口パターン14と直交して配列される複数の第二の直線状開口パターン16と、隣り合う第二の直線状開口パターン16間のパターン残し部17に近接して配列されるダミー開口パターン18とを有する第二のマスク層15を形成し、第一の直線状開口パターン14と第二の直線状開口パターン16との交差部下方の第一の層間絶縁層10aをエッチング加工してコンタクトホール19を形成する。
【選択図】図4
Description
10b 第二の層間絶縁層
11a コンタクトプラグ
12a 配線層
13 第一のマスク層
14 第一の直線状開口パターン
15 第二のマスク層
16 第二の直線状開口パターン
17 第二の直線状開口パターン間のパターン残し部
18、18a、18b、18c ダミー開口パターン
19 コンタクトホール
20 導電層
21 配線パターン形成用のマスク層
22 配線溝開口パターン
23 配線溝開口パターン間のパターン残し部
24 配線溝
25 溝
Claims (5)
- 第一の層間絶縁層上に、第一の直線状開口パターンを有する第一のマスク層を形成する工程と、
前記第一のマスク層上に、前記第一の直線状開口パターンと交差して配列される複数の第二の直線状開口パターンと、隣り合う前記第二の直線状開口パターン間のパターン残し部に近接して配置されるダミー開口パターンとを有する第二のマスク層を形成する工程と、
前記第一の直線状開口パターンと前記第二の直線状開口パターンとの交差部下方の前記第一の層間絶縁層をエッチング加工してホールを形成する工程と、
を備えたことを特徴とする半導体装置の製造方法。 - 前記ホールを形成する工程の後に、
前記第二のマスク層を除去する工程と、
前記ホールに導電層を埋め込む工程と、
前記ホール以外の前記導電層及び前記第一のマスク層を研磨除去する工程と、
を更に備えたことを特徴とする請求項1記載の半導体装置の製造方法。 - 前記ホールを形成する工程の後に、
前記第一のマスク層及び前記第二のマスク層を除去する工程と、
前記ホールに導電層を埋め込む工程と、
前記ホール以外の前記導電層を研磨除去する工程と、
を更に備えたことを特徴とする請求項1記載の半導体装置の製造方法。 - 第一の層間絶縁層上に、第一の直線状開口パターンを有する第一のマスク層を形成する工程と、
前記第一の直線状開口パターン下方の前記第一の層間絶縁層上及び前記第一のマスク層上に第二の層間絶縁層を形成する工程と、
前記第二の層間絶縁層上に、前記第一の直線状開口パターンと交差して配列される複数の配線溝開口パターンと、隣り合う前記配線溝開口パターン間のパターン残し部に近接して配置されるダミー開口パターンとを有する配線パターン形成用のマスク層を形成する工程と、
前記配線溝開口パターン下方の前記第二の層間絶縁層をエッチング加工して配線溝を形成する工程と、
前記第一の直線状開口パターンと前記配線溝開口パターンの交差部下方の前記第一の層間絶縁層をエッチング加工してホールを形成する工程と、
を備えたことを特徴とする半導体装置の製造方法。 - 前記ダミー開口パターンは、前記パターン残し部を挟むように、前記パターン残し部の両端部に近接して配置されていることを特徴とする請求項1乃至4のいずれか一項に記載の半導体装置の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006105741A JP4155587B2 (ja) | 2006-04-06 | 2006-04-06 | 半導体装置の製造方法 |
KR1020070033710A KR20070100154A (ko) | 2006-04-06 | 2007-04-05 | 미세 컨택트 홀을 갖는 반도체 기억 장치 및 반도체 장치의제조 방법 |
US11/783,236 US7727899B2 (en) | 2006-04-06 | 2007-04-06 | Manufacturing method of semiconductor device and semiconductor storage device including fine contact holes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006105741A JP4155587B2 (ja) | 2006-04-06 | 2006-04-06 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007281200A true JP2007281200A (ja) | 2007-10-25 |
JP4155587B2 JP4155587B2 (ja) | 2008-09-24 |
Family
ID=38648846
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006105741A Expired - Fee Related JP4155587B2 (ja) | 2006-04-06 | 2006-04-06 | 半導体装置の製造方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7727899B2 (ja) |
JP (1) | JP4155587B2 (ja) |
KR (1) | KR20070100154A (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012504325A (ja) * | 2008-09-30 | 2012-02-16 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | ハードマスク及び二重露光により形成される半導体デバイスのコンタクト及びビア |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8030215B1 (en) * | 2008-02-19 | 2011-10-04 | Marvell International Ltd. | Method for creating ultra-high-density holes and metallization |
KR101166799B1 (ko) * | 2009-12-29 | 2012-07-26 | 에스케이하이닉스 주식회사 | 홀 패턴 제조 방법 |
KR101709172B1 (ko) * | 2010-11-25 | 2017-02-22 | 삼성전자 주식회사 | 반도체 소자의 제조방법 |
CN102956817B (zh) * | 2011-08-19 | 2014-12-24 | 中芯国际集成电路制造(上海)有限公司 | 相变存储器的制造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US5466639A (en) * | 1994-10-06 | 1995-11-14 | Micron Semiconductor, Inc. | Double mask process for forming trenches and contacts during the formation of a semiconductor memory device |
JPH09153545A (ja) | 1995-09-29 | 1997-06-10 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH09260492A (ja) * | 1996-03-25 | 1997-10-03 | Toshiba Corp | 半導体装置の製造方法 |
US6303272B1 (en) * | 1998-11-13 | 2001-10-16 | International Business Machines Corporation | Process for self-alignment of sub-critical contacts to wiring |
US6204187B1 (en) * | 1999-01-06 | 2001-03-20 | Infineon Technologies North America, Corp. | Contact and deep trench patterning |
GB2346009B (en) * | 1999-01-13 | 2002-03-20 | Lucent Technologies Inc | Define via in dual damascene process |
JP2000357736A (ja) | 1999-06-15 | 2000-12-26 | Toshiba Corp | 半導体装置及びその製造方法 |
US6664028B2 (en) * | 2000-12-04 | 2003-12-16 | United Microelectronics Corp. | Method of forming opening in wafer layer |
DE10154820B4 (de) * | 2001-11-08 | 2005-06-02 | Infineon Technologies Ag | Verfahren zum Herstellen einer Maske für Halbleiterstrukturen |
US20050103441A1 (en) | 2001-11-14 | 2005-05-19 | Masanobu Honda | Etching method and plasma etching apparatus |
US6649526B2 (en) * | 2001-11-15 | 2003-11-18 | Macronix International Co., Ltd. | Method for implanting and coding a read-only memory with automatic alignment at four corners |
JP2003188252A (ja) | 2001-12-13 | 2003-07-04 | Toshiba Corp | 半導体装置及びその製造方法 |
US7119010B2 (en) * | 2002-04-23 | 2006-10-10 | Chartered Semiconductor Manfacturing Ltd. | Integrated circuit with self-aligned line and via and manufacturing method therefor |
US7071097B2 (en) * | 2004-07-09 | 2006-07-04 | International Business Machines Corporation | Method for improved process latitude by elongated via integration |
-
2006
- 2006-04-06 JP JP2006105741A patent/JP4155587B2/ja not_active Expired - Fee Related
-
2007
- 2007-04-05 KR KR1020070033710A patent/KR20070100154A/ko not_active Application Discontinuation
- 2007-04-06 US US11/783,236 patent/US7727899B2/en active Active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012504325A (ja) * | 2008-09-30 | 2012-02-16 | アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド | ハードマスク及び二重露光により形成される半導体デバイスのコンタクト及びビア |
Also Published As
Publication number | Publication date |
---|---|
KR20070100154A (ko) | 2007-10-10 |
JP4155587B2 (ja) | 2008-09-24 |
US20070254472A1 (en) | 2007-11-01 |
US7727899B2 (en) | 2010-06-01 |
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