JP2007266593A5 - - Google Patents
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- Publication number
- JP2007266593A5 JP2007266593A5 JP2007047097A JP2007047097A JP2007266593A5 JP 2007266593 A5 JP2007266593 A5 JP 2007266593A5 JP 2007047097 A JP2007047097 A JP 2007047097A JP 2007047097 A JP2007047097 A JP 2007047097A JP 2007266593 A5 JP2007266593 A5 JP 2007266593A5
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- JP
- Japan
- Prior art keywords
- substrate
- organic compound
- layer
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims 16
- 150000002894 organic compounds Chemical class 0.000 claims 12
- 239000004065 semiconductor Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 9
- 238000000034 method Methods 0.000 claims 8
- 230000001699 photocatalysis Effects 0.000 claims 6
- 239000000126 substance Substances 0.000 claims 5
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- 230000000903 blocking effect Effects 0.000 claims 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 229910000484 niobium oxide Inorganic materials 0.000 claims 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007047097A JP5276792B2 (ja) | 2006-03-03 | 2007-02-27 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006058513 | 2006-03-03 | ||
| JP2006058513 | 2006-03-03 | ||
| JP2007047097A JP5276792B2 (ja) | 2006-03-03 | 2007-02-27 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012265200A Division JP2013084973A (ja) | 2006-03-03 | 2012-12-04 | 装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007266593A JP2007266593A (ja) | 2007-10-11 |
| JP2007266593A5 true JP2007266593A5 (enExample) | 2010-03-25 |
| JP5276792B2 JP5276792B2 (ja) | 2013-08-28 |
Family
ID=38639229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007047097A Expired - Fee Related JP5276792B2 (ja) | 2006-03-03 | 2007-02-27 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5276792B2 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008149874A1 (en) * | 2007-06-08 | 2008-12-11 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| JP2009135448A (ja) * | 2007-11-01 | 2009-06-18 | Semiconductor Energy Lab Co Ltd | 半導体基板の作製方法及び半導体装置の作製方法 |
| TWI508282B (zh) * | 2008-08-08 | 2015-11-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| US8610155B2 (en) | 2008-11-18 | 2013-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, method for manufacturing the same, and cellular phone |
| JP5257314B2 (ja) * | 2009-09-29 | 2013-08-07 | 大日本印刷株式会社 | 積層体、準備用支持体、積層体の製造方法、及びデバイスの製造方法 |
| KR101943293B1 (ko) | 2009-10-16 | 2019-01-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 표시 장치 및 전자 장치 |
| US8580337B2 (en) | 2009-11-13 | 2013-11-12 | Empire Technology Development Llc | Thermoplastic coating and removal using bonding interface with catalytic nanoparticles |
| WO2013005254A1 (ja) * | 2011-07-06 | 2013-01-10 | パナソニック株式会社 | フレキシブルデバイスの製造方法及びフレキシブルデバイス |
| CN106597697A (zh) * | 2013-12-02 | 2017-04-26 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
| CN104779265B (zh) * | 2014-01-14 | 2020-07-07 | 松下电器产业株式会社 | 发光装置 |
| CN104248962B (zh) * | 2014-05-15 | 2016-08-24 | 厦门紫金矿冶技术有限公司 | 难生化高盐矿山选冶废水催化预氧化处理回用技术 |
| JP6432189B2 (ja) * | 2014-07-18 | 2018-12-05 | 株式会社デンソー | 有機半導体装置およびその製造方法 |
| US9515272B2 (en) * | 2014-11-12 | 2016-12-06 | Rohm And Haas Electronic Materials Llc | Display device manufacture using a sacrificial layer interposed between a carrier and a display device substrate |
| JP6517678B2 (ja) * | 2015-12-11 | 2019-05-22 | 株式会社Ｓｃｒｅｅｎホールディングス | 電子デバイスの製造方法 |
| DE102016124646A1 (de) * | 2016-12-16 | 2018-06-21 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung eines Halbleiterbauelements |
| JP6341345B1 (ja) * | 2017-03-07 | 2018-06-13 | 富士ゼロックス株式会社 | 発光装置、画像形成装置及び光照射装置 |
| CN111081743B (zh) * | 2019-12-11 | 2022-06-07 | 深圳市华星光电半导体显示技术有限公司 | 显示面板的制造方法及显示面板 |
| WO2023201620A1 (en) * | 2022-04-21 | 2023-10-26 | Dic Corporation | Tantalate particles and method for producing tantalate particles |
| CN114716157B (zh) * | 2022-05-11 | 2023-10-31 | 南京卡巴卡电子科技有限公司 | 一种用于高温加速度传感器的铁电薄膜及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3218861B2 (ja) * | 1994-05-17 | 2001-10-15 | ソニー株式会社 | 液晶表示装置の製造方法 |
| JP3809733B2 (ja) * | 1998-02-25 | 2006-08-16 | セイコーエプソン株式会社 | 薄膜トランジスタの剥離方法 |
| JP4631113B2 (ja) * | 1999-10-26 | 2011-02-16 | 株式会社デンソー | 半導体装置の製造方法 |
| JP2003098977A (ja) * | 2001-09-19 | 2003-04-04 | Sony Corp | 素子の転写方法、素子の配列方法、及び画像表示装置の製造方法 |
| JP2004253483A (ja) * | 2003-02-18 | 2004-09-09 | Dainippon Printing Co Ltd | 半導体ウエハの製造方法 |
-
2007
- 2007-02-27 JP JP2007047097A patent/JP5276792B2/ja not_active Expired - Fee Related
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