JP2007266587A5 - - Google Patents
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- Publication number
- JP2007266587A5 JP2007266587A5 JP2007043759A JP2007043759A JP2007266587A5 JP 2007266587 A5 JP2007266587 A5 JP 2007266587A5 JP 2007043759 A JP2007043759 A JP 2007043759A JP 2007043759 A JP2007043759 A JP 2007043759A JP 2007266587 A5 JP2007266587 A5 JP 2007266587A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- carbon
- semiconductor device
- manufacturing
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 13
- 229910052799 carbon Inorganic materials 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 8
- 238000000034 method Methods 0.000 claims 7
- 239000011941 photocatalyst Substances 0.000 claims 7
- 230000015572 biosynthetic process Effects 0.000 claims 5
- 230000001699 photocatalysis Effects 0.000 claims 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 150000002484 inorganic compounds Chemical group 0.000 claims 2
- 229910010272 inorganic material Inorganic materials 0.000 claims 2
- 230000001678 irradiating effect Effects 0.000 claims 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910000416 bismuth oxide Inorganic materials 0.000 claims 1
- 229910002115 bismuth titanate Inorganic materials 0.000 claims 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims 1
- 229910002804 graphite Inorganic materials 0.000 claims 1
- 239000010439 graphite Substances 0.000 claims 1
- 239000004973 liquid crystal related substance Substances 0.000 claims 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 claims 1
- JMANVNJQNLATNU-UHFFFAOYSA-N oxalonitrile Chemical compound N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims 1
- 229910001887 tin oxide Inorganic materials 0.000 claims 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 1
- 229910001930 tungsten oxide Inorganic materials 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007043759A JP5222479B2 (ja) | 2006-03-03 | 2007-02-23 | 半導体装置の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006058697 | 2006-03-03 | ||
| JP2006058697 | 2006-03-03 | ||
| JP2007043759A JP5222479B2 (ja) | 2006-03-03 | 2007-02-23 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007266587A JP2007266587A (ja) | 2007-10-11 |
| JP2007266587A5 true JP2007266587A5 (enExample) | 2010-02-12 |
| JP5222479B2 JP5222479B2 (ja) | 2013-06-26 |
Family
ID=38639223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007043759A Expired - Fee Related JP5222479B2 (ja) | 2006-03-03 | 2007-02-23 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5222479B2 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5115277B2 (ja) * | 2008-03-31 | 2013-01-09 | Ｔｄｋ株式会社 | 発光素子 |
| TWI508282B (zh) * | 2008-08-08 | 2015-11-11 | Semiconductor Energy Lab | 半導體裝置及其製造方法 |
| WO2013018251A1 (ja) * | 2011-08-03 | 2013-02-07 | パナソニック株式会社 | 有機発光素子 |
| JP6083191B2 (ja) * | 2012-10-25 | 2017-02-22 | 株式会社Ihi | 半導体デバイスの製造方法 |
| CN106597697A (zh) | 2013-12-02 | 2017-04-26 | 株式会社半导体能源研究所 | 显示装置及其制造方法 |
| KR101809070B1 (ko) | 2016-08-01 | 2018-01-19 | 주식회사 비에스피 | Oled 조명모듈의 제조장치 및 이를 이용한 oled 조명모듈의 제조방법 |
| JP2020150027A (ja) * | 2019-03-11 | 2020-09-17 | キオクシア株式会社 | 基板の分離方法、半導体記憶装置の製造方法、および基板分離装置 |
| CN114144846B (zh) * | 2019-05-21 | 2025-12-02 | Genx能源有限责任公司 | β辐射伏特效应装置 |
| US20240402006A1 (en) * | 2023-06-02 | 2024-12-05 | International Business Machines Corporation | Flexible ultraviolet sensor |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003098977A (ja) * | 2001-09-19 | 2003-04-04 | Sony Corp | 素子の転写方法、素子の配列方法、及び画像表示装置の製造方法 |
| WO2005106961A1 (en) * | 2004-04-28 | 2005-11-10 | Semiconductor Energy Laboratory Co., Ltd. | Mos capacitor and semiconductor device |
| JP5288581B2 (ja) * | 2006-03-03 | 2013-09-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
-
2007
- 2007-02-23 JP JP2007043759A patent/JP5222479B2/ja not_active Expired - Fee Related
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