JP2007258308A5 - - Google Patents

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Publication number
JP2007258308A5
JP2007258308A5 JP2006078237A JP2006078237A JP2007258308A5 JP 2007258308 A5 JP2007258308 A5 JP 2007258308A5 JP 2006078237 A JP2006078237 A JP 2006078237A JP 2006078237 A JP2006078237 A JP 2006078237A JP 2007258308 A5 JP2007258308 A5 JP 2007258308A5
Authority
JP
Japan
Prior art keywords
layer
base electrode
electrode
dark current
transistor element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006078237A
Other languages
English (en)
Japanese (ja)
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JP2007258308A (ja
JP5182775B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP2006078237A external-priority patent/JP5182775B2/ja
Priority to JP2006078237A priority Critical patent/JP5182775B2/ja
Priority to US12/293,649 priority patent/US8120242B2/en
Priority to CN2010106039312A priority patent/CN102130299A/zh
Priority to PCT/JP2007/055891 priority patent/WO2007119490A1/ja
Priority to KR1020087025659A priority patent/KR101255407B1/ko
Priority to CN200780010021XA priority patent/CN101432883B/zh
Priority to EP07739334A priority patent/EP2009700A4/en
Priority to TW096109957A priority patent/TW200810111A/zh
Publication of JP2007258308A publication Critical patent/JP2007258308A/ja
Publication of JP2007258308A5 publication Critical patent/JP2007258308A5/ja
Priority to US13/351,661 priority patent/US20120112318A1/en
Publication of JP5182775B2 publication Critical patent/JP5182775B2/ja
Application granted granted Critical
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006078237A 2006-03-22 2006-03-22 トランジスタ素子及びその製造方法、電子デバイス、発光素子並びにディスプレイ Active JP5182775B2 (ja)

Priority Applications (9)

Application Number Priority Date Filing Date Title
JP2006078237A JP5182775B2 (ja) 2006-03-22 2006-03-22 トランジスタ素子及びその製造方法、電子デバイス、発光素子並びにディスプレイ
CN200780010021XA CN101432883B (zh) 2006-03-22 2007-03-22 晶体管元件及其制造方法以及发光元件和显示器
TW096109957A TW200810111A (en) 2006-03-22 2007-03-22 Transistor element and its fabrication process, light emitting element, and display
CN2010106039312A CN102130299A (zh) 2006-03-22 2007-03-22 晶体管元件及其制造方法以及发光元件和显示器
PCT/JP2007/055891 WO2007119490A1 (ja) 2006-03-22 2007-03-22 トランジスタ素子及びその製造方法並びに発光素子及びディスプレイ
KR1020087025659A KR101255407B1 (ko) 2006-03-22 2007-03-22 트랜지스터 소자 및 그 제조 방법 및 발광 소자 및 디스플레이
US12/293,649 US8120242B2 (en) 2006-03-22 2007-03-22 Transistor and process of producing the same, light-emitting device, and display
EP07739334A EP2009700A4 (en) 2006-03-22 2007-03-22 TRANSISTOR ELEMENT, MANUFACTURING METHOD, LIGHT ELEMENT AND DISPLAY
US13/351,661 US20120112318A1 (en) 2006-03-22 2012-01-17 Transistor and process of producing the same, light-emitting device, and display

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006078237A JP5182775B2 (ja) 2006-03-22 2006-03-22 トランジスタ素子及びその製造方法、電子デバイス、発光素子並びにディスプレイ

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010000501A Division JP5282045B2 (ja) 2010-01-05 2010-01-05 トランジスタ素子、電子デバイス、発光素子及びディスプレイ

Publications (3)

Publication Number Publication Date
JP2007258308A JP2007258308A (ja) 2007-10-04
JP2007258308A5 true JP2007258308A5 (cg-RX-API-DMAC7.html) 2010-02-18
JP5182775B2 JP5182775B2 (ja) 2013-04-17

Family

ID=38609275

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006078237A Active JP5182775B2 (ja) 2006-03-22 2006-03-22 トランジスタ素子及びその製造方法、電子デバイス、発光素子並びにディスプレイ

Country Status (7)

Country Link
US (2) US8120242B2 (cg-RX-API-DMAC7.html)
EP (1) EP2009700A4 (cg-RX-API-DMAC7.html)
JP (1) JP5182775B2 (cg-RX-API-DMAC7.html)
KR (1) KR101255407B1 (cg-RX-API-DMAC7.html)
CN (2) CN102130299A (cg-RX-API-DMAC7.html)
TW (1) TW200810111A (cg-RX-API-DMAC7.html)
WO (1) WO2007119490A1 (cg-RX-API-DMAC7.html)

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JP4900160B2 (ja) * 2007-09-26 2012-03-21 大日本印刷株式会社 発光素子及び発光表示装置
RU2472255C2 (ru) * 2007-12-14 2013-01-10 Конинклейке Филипс Электроникс Н.В. Органическое светоизлучающее устройство с регулируемой инжекцией носителей заряда
TWI425693B (zh) * 2008-03-14 2014-02-01 Univ Nat Chiao Tung Vertical drive and parallel drive organic light emitting crystal structure
TWI384666B (zh) * 2008-04-10 2013-02-01 Univ Nat Chiao Tung Light detection device structure
JP5352118B2 (ja) * 2008-05-07 2013-11-27 独立行政法人科学技術振興機構 有機トランジスタ素子と電子・電気機器
KR101468592B1 (ko) * 2008-06-25 2014-12-05 삼성전자주식회사 유기 광전 변환막, 광전 변환 소자 및 이미지 센서
KR101045264B1 (ko) * 2008-09-09 2011-06-29 네오뷰코오롱 주식회사 디스플레이 장치, 이를 구비하는 모바일 기기 및 디스플레이 제어 방법
JP5370810B2 (ja) * 2008-09-19 2013-12-18 富士電機株式会社 トランジスタ素子およびその製造方法
JP5534702B2 (ja) * 2009-04-14 2014-07-02 日本放送協会 有機縦型トランジスタ
JP5477841B2 (ja) * 2009-05-11 2014-04-23 健一 中山 トランジスタ素子
JP5499045B2 (ja) * 2009-09-04 2014-05-21 大日精化工業株式会社 電流増幅型トランジスタ素子及び電流増幅型発光トランジスタ素子
TWI415318B (zh) * 2010-09-14 2013-11-11 E Ink Holdings Inc 電晶體結構
DE102010041331A1 (de) * 2010-09-24 2012-03-29 Siemens Aktiengesellschaft Ladungsträgermodulation zur Farb- und Helligkeitsabstimmung in organischen Leuchtdioden
CN102339955A (zh) * 2011-10-09 2012-02-01 北京理工大学 一种共振隧穿有机发光二极管及其制备方法
DE102012102910B4 (de) * 2012-04-03 2016-09-22 Novaled Ag Vertikaler organischer Transistor und Verfahren zum Herstellen
US9608217B2 (en) 2012-04-27 2017-03-28 Dainichiseika Color & Chemicals Mfg. Co., Ltd. Transistor element
JP6092679B2 (ja) * 2013-03-26 2017-03-08 中山　健一 トランジスタ素子
US9929365B2 (en) 2014-05-28 2018-03-27 The Regents Of The University Of Michigan Excited state management
US10290816B2 (en) 2015-11-16 2019-05-14 The Regents Of The University Of Michigan Organic electroluminescent materials and devices
KR20170129983A (ko) 2016-05-17 2017-11-28 삼성전자주식회사 발광소자 패키지, 이를 이용한 디스플레이 장치 및 그 제조방법
WO2021192068A1 (ja) * 2020-03-25 2021-09-30 シャープ株式会社 発光素子および発光素子の制御方法
US12342429B2 (en) * 2020-07-29 2025-06-24 Sharp Kabushiki Kaisha Light-emitting device and driving method for light-emitting device
KR102569796B1 (ko) * 2022-12-29 2023-08-25 한국표준과학연구원 역 구조의 수직형 발광 트랜지스터 및 그 제조방법
KR102571946B1 (ko) * 2022-12-29 2023-08-30 한국표준과학연구원 수직형 유기 박막 트랜지스터 및 제조방법

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JP3268993B2 (ja) * 1997-01-31 2002-03-25 三洋電機株式会社 表示装置
US6884093B2 (en) * 2000-10-03 2005-04-26 The Trustees Of Princeton University Organic triodes with novel grid structures and method of production
JP2002208486A (ja) 2001-01-09 2002-07-26 Canon Inc 有機電子デバイス
US7173275B2 (en) * 2001-05-21 2007-02-06 Regents Of The University Of Colorado Thin-film transistors based on tunneling structures and applications
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KR101001471B1 (ko) 2003-10-10 2010-12-14 삼성전자주식회사 표면요철구조에 의해 향상된 전하 이동도를 갖는 유기박막트랜지스터
CN101015066A (zh) * 2004-04-26 2007-08-08 科罗拉多大学理事会 热电子晶体管
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