JP2007221142A - 半導体発光素子及びその製造方法 - Google Patents

半導体発光素子及びその製造方法 Download PDF

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Publication number
JP2007221142A
JP2007221142A JP2007033773A JP2007033773A JP2007221142A JP 2007221142 A JP2007221142 A JP 2007221142A JP 2007033773 A JP2007033773 A JP 2007033773A JP 2007033773 A JP2007033773 A JP 2007033773A JP 2007221142 A JP2007221142 A JP 2007221142A
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JP
Japan
Prior art keywords
semiconductor layer
semiconductor
emitting device
light emitting
layer
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Pending
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JP2007033773A
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English (en)
Japanese (ja)
Inventor
Jeong-Wook Lee
庭 旭 李
Hyun-Soo Kim
顯 秀 金
Joo-Sung Kim
柱 成 金
Suk-Ho Yoon
▲せき▼ 胡 尹
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Samsung Electro Mechanics Co Ltd
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Samsung Electro Mechanics Co Ltd
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Publication date
Application filed by Samsung Electro Mechanics Co Ltd filed Critical Samsung Electro Mechanics Co Ltd
Publication of JP2007221142A publication Critical patent/JP2007221142A/ja
Pending legal-status Critical Current

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JP2007033773A 2006-02-14 2007-02-14 半導体発光素子及びその製造方法 Pending JP2007221142A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20060014241A KR100887067B1 (ko) 2006-02-14 2006-02-14 나노 패턴 구조를 지닌 반도체 발광 소자의 제조 방법

Publications (1)

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JP2007221142A true JP2007221142A (ja) 2007-08-30

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JP2007033773A Pending JP2007221142A (ja) 2006-02-14 2007-02-14 半導体発光素子及びその製造方法

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JP (1) JP2007221142A (ko)
KR (1) KR100887067B1 (ko)
CN (1) CN101022146A (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014082496A (ja) * 2012-10-17 2014-05-08 Lg Innotek Co Ltd 発光素子

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KR100889569B1 (ko) * 2007-09-14 2009-03-23 우리엘에스티 주식회사 질화물계 발광소자 및 그 제조방법
US8460949B2 (en) 2008-12-30 2013-06-11 Chang Hee Hong Light emitting device with air bars and method of manufacturing the same
KR101060975B1 (ko) * 2008-12-30 2011-08-31 전북대학교산학협력단 에어갭을 구비하는 발광소자 및 그 제조방법
CN102299225B (zh) * 2010-06-22 2013-08-28 联胜光电股份有限公司 具有高反射与低缺陷密度的发光二极管结构
KR101227373B1 (ko) 2011-01-28 2013-01-30 전북대학교산학협력단 마이크로 패턴을 갖는 발광소자 및 그 제조방법
US9236533B2 (en) 2011-12-23 2016-01-12 Seoul Viosys Co., Ltd. Light emitting diode and method for manufacturing same
FR2985609B1 (fr) * 2012-01-05 2014-02-07 Commissariat Energie Atomique Substrat structure pour leds a forte extraction de lumiere
KR20130090149A (ko) * 2012-02-03 2013-08-13 서울옵토디바이스주식회사 반도체 발광소자 및 그 제조방법
CN103378249A (zh) * 2012-04-13 2013-10-30 璨圆光电股份有限公司 发光二极管的具有介电材料层的半导体层及其制作方法
KR101399460B1 (ko) 2012-10-23 2014-05-28 한국기계연구원 이종 재료 나노패턴이 내장된 기판 제조방법
KR102042437B1 (ko) * 2013-04-25 2019-11-08 엘지이노텍 주식회사 발광소자 및 이를 구비하는 조명 시스템
CN103560079A (zh) * 2013-09-24 2014-02-05 西安神光皓瑞光电科技有限公司 一种通过缺陷钝化减少GaN外延缺陷的方法
KR101403539B1 (ko) * 2013-12-13 2014-06-03 부경대학교 산학협력단 나노입자 배열방법
CN104505444B (zh) * 2014-12-09 2018-03-06 西安神光安瑞光电科技有限公司 一种减少外延层缺陷密度的外延生长方法
KR20210018731A (ko) * 2019-08-09 2021-02-18 현대자동차주식회사 트레일러 장착 차량의 주행 지원 장치, 그를 포함한 시스템 및 그 방법

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JPH09199759A (ja) * 1996-01-19 1997-07-31 Toyoda Gosei Co Ltd ３族窒化物半導体の製造方法及び半導体素子
JP2002217116A (ja) * 2001-01-18 2002-08-02 Sony Corp 結晶膜、結晶基板および半導体装置の製造方法
JP2002217115A (ja) * 2001-01-18 2002-08-02 Sony Corp 結晶膜、結晶基板および半導体装置
JP2003142414A (ja) * 2001-11-02 2003-05-16 Nichia Chem Ind Ltd 窒化物半導体の成長方法
JP2004153089A (ja) * 2002-10-31 2004-05-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
JP2004193619A (ja) * 2002-12-11 2004-07-08 Lumileds Lighting Us Llc 光散乱を強化した発光素子
JP2005535143A (ja) * 2002-07-31 2005-11-17 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング ＧａＮベースの発光薄膜半導体素子
JP2006013500A (ja) * 2004-06-24 2006-01-12 Shogen Koden Kofun Yugenkoshi 発光装置
JP2006165582A (ja) * 2004-12-08 2006-06-22 Samsung Electro Mech Co Ltd 凹凸構造を含む発光素子及びその製造方法

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KR100581831B1 (ko) * 2004-02-05 2006-05-23 엘지전자 주식회사 발광 다이오드
KR101079415B1 (ko) * 2004-02-27 2011-11-02 엘지전자 주식회사 반도체 발광소자 및 그 제조방법
KR100568300B1 (ko) * 2004-03-31 2006-04-05 삼성전기주식회사 질화물 반도체 발광소자 및 그 제조방법
KR100616596B1 (ko) * 2004-07-09 2006-08-28 삼성전기주식회사 질화물 반도체 소자 및 제조방법

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09199759A (ja) * 1996-01-19 1997-07-31 Toyoda Gosei Co Ltd ３族窒化物半導体の製造方法及び半導体素子
JP2002217116A (ja) * 2001-01-18 2002-08-02 Sony Corp 結晶膜、結晶基板および半導体装置の製造方法
JP2002217115A (ja) * 2001-01-18 2002-08-02 Sony Corp 結晶膜、結晶基板および半導体装置
JP2003142414A (ja) * 2001-11-02 2003-05-16 Nichia Chem Ind Ltd 窒化物半導体の成長方法
JP2005535143A (ja) * 2002-07-31 2005-11-17 オスラム　オプト　セミコンダクターズ　ゲゼルシャフト　ミット　ベシュレンクテル　ハフツング ＧａＮベースの発光薄膜半導体素子
JP2004153089A (ja) * 2002-10-31 2004-05-27 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子及びその製造方法
JP2004193619A (ja) * 2002-12-11 2004-07-08 Lumileds Lighting Us Llc 光散乱を強化した発光素子
JP2006013500A (ja) * 2004-06-24 2006-01-12 Shogen Koden Kofun Yugenkoshi 発光装置
JP2006165582A (ja) * 2004-12-08 2006-06-22 Samsung Electro Mech Co Ltd 凹凸構造を含む発光素子及びその製造方法
JP4970782B2 (ja) * 2004-12-08 2012-07-11 サムソン エルイーディー カンパニーリミテッド． 凹凸構造を含む発光素子及びその製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014082496A (ja) * 2012-10-17 2014-05-08 Lg Innotek Co Ltd 発光素子

Also Published As

Publication number Publication date
CN101022146A (zh) 2007-08-22
KR100887067B1 (ko) 2009-03-04
KR20070081934A (ko) 2007-08-20

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