JP4970782B2 - 凹凸構造を含む発光素子及びその製造方法 - Google Patents
凹凸構造を含む発光素子及びその製造方法 Download PDFInfo
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- JP4970782B2 JP4970782B2 JP2005355405A JP2005355405A JP4970782B2 JP 4970782 B2 JP4970782 B2 JP 4970782B2 JP 2005355405 A JP2005355405 A JP 2005355405A JP 2005355405 A JP2005355405 A JP 2005355405A JP 4970782 B2 JP4970782 B2 JP 4970782B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 205
- 239000000758 substrate Substances 0.000 claims description 58
- 238000005530 etching Methods 0.000 claims description 40
- 238000000034 method Methods 0.000 claims description 30
- 239000000463 material Substances 0.000 claims description 21
- 229910052594 sapphire Inorganic materials 0.000 claims description 17
- 239000010980 sapphire Substances 0.000 claims description 17
- 239000004020 conductor Substances 0.000 claims description 15
- 239000012212 insulator Substances 0.000 claims description 11
- 229910052746 lanthanum Inorganic materials 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 7
- 229910004140 HfO Inorganic materials 0.000 claims description 7
- 229910004205 SiNX Inorganic materials 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 7
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 7
- 230000000996 additive effect Effects 0.000 claims description 7
- 229910052804 chromium Inorganic materials 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 229910052748 manganese Inorganic materials 0.000 claims description 7
- 229910052750 molybdenum Inorganic materials 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052758 niobium Inorganic materials 0.000 claims description 7
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 7
- 229910052714 tellurium Inorganic materials 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 229910052725 zinc Inorganic materials 0.000 claims description 7
- 229910052726 zirconium Inorganic materials 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 20
- 230000007547 defect Effects 0.000 description 18
- 238000000605 extraction Methods 0.000 description 17
- 239000013078 crystal Substances 0.000 description 15
- 238000007796 conventional method Methods 0.000 description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- 229910052777 Praseodymium Inorganic materials 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 238000000137 annealing Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- -1 nitride compound Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 101100537098 Mus musculus Alyref gene Proteins 0.000 description 1
- 101150095908 apex1 gene Proteins 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/025—Physical imperfections, e.g. particular concentration or distribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
22 第1半導体層、
23 中間層、
24 第2半導体層、
25 活性層、
26 第3半導体層、
27 第1電極、
28 第2電極。
Claims (16)
- 半導体発光素子において、
基板と、
前記基板上に形成され、複数のエッチピットをエッチングして当該基板が露出されるように形成された凹凸構造を有する第1半導体層と、
前記露出された基板上に形成され、前記第1半導体層における前記複数のエッチピットをエッチングして形成された領域に充填される透光性物質からなる中間層と、
前記第1半導体層及び前記中間層上に順次に形成された第2半導体層、活性層及び第3半導体層と、
を備えることを特徴とする半導体発光素子。 - 前記基板は、サファイア基板であることを特徴とする請求項1に記載の半導体発光素子。
- 前記中間層は、屈折率が2.5以下の透光性物質で形成されたことを特徴とする請求項1または2に記載の半導体発光素子。
- 前記中間層は、透明絶縁体であってSiO2、SiNx、Al2O3、HfO、TiO2またはZrOのうち少なくとも何れか一つを含んで形成されたことを特徴とする請求項3に記載の半導体発光素子。
- 前記中間層は、透明伝導体であってZnOで形成させるか、またはIn酸化物にMg、Ag、Zn、Sc、Hf、Zr、Te、Se、Ta、W、Nb、Cu、Si、Ni、Co、Mo、Cr、Mn、Hg、Pr、およびLaからなる群から選択される少なくとも何れか一つの添加物を含めて形成させることを特徴とする請求項3に記載の半導体発光素子。
- 前記第1半導体層、前記第2半導体層、及び前記第3半導体層は、GaNを含んで形成されたことを特徴とする請求項1から5の何れか1項に記載の半導体発光素子。
- 前記第3半導体層上に形成された第1電極と、
前記第2半導体層の前記活性層が形成されていない領域に形成された第2電極と、
を備えることを特徴とする請求項1から6の何れか1項に記載の半導体発光素子。 - 前記第1半導体層の凹凸パターンの形状は、六角梯形、六角柱状またはこれらの逆の形状であることを特徴とする請求項1から7の何れか1項に記載の半導体発光素子。
- 半導体発光素子の製造方法において、
(a)基板上に第1半導体層を形成させる工程と、
(b)前記第1半導体層の複数のエッチピットをエッチングして前記基板が露出されるように形成された凹凸構造を形成させる工程と、
(c)前記第1半導体層における前記複数のエッチピットをエッチングして形成された領域を充填するように透光性物質を塗布することで、前記基板上に中間層を形成させる工程と、
(d)前記第1半導体層及び前記中間層上に第2半導体層、活性層及び第3半導体層を順次に形成させる工程と、
を含むことを特徴とする半導体発光素子の製造方法。 - 前記(b)工程は、
前記第1半導体層の表面にエッチピットを形成させる第1エッチング工程と、
前記第1半導体層のエッチピットをエッチングして前記基板の表面を露出させる第2エッチング工程と、
を含むことを特徴とする請求項9に記載の半導体発光素子の製造方法。 - 前記第1エッチング工程は、H3PO4を使用し、前記第2エッチング工程は、KOHを使用してエッチングを行うことを特徴とする請求項10に記載の半導体発光素子の製造方法。
- 前記(c)工程は、
前記露出された基板及び凹凸構造の前記第1半導体層上に透光性物質を塗布する工程と、
前記第1半導体層の表面が露出されるように前記透光性物質を除去してレべリングして前記中間層を形成する工程と、
を含むことを特徴とする請求項9から11の何れか1項に記載の半導体発光素子の製造方法。 - 前記中間層は、透明絶縁体であってSiO2、SiNx、Al2O3、HfO、TiO2またはZrOのうち少なくとも何れか一つを含んで形成させることを特徴とする請求項12に記載の半導体発光素子の製造方法。
- 前記中間層は、透明伝導体であってZnOで形成させるか、またはIn酸化物にMg、Ag、Zn、Sc、Hf、Zr、Te、Se、Ta、W、Nb、Cu、Si、Ni、Co、Mo、Cr、Mn、Hg、PrおよびLaからなる群から選択される少なくとも何れか一つの添加物を含めて形成させることを特徴とする請求項12に記載の半導体発光素子の製造方法。
- 前記透光性物質を塗布した後に熱処理を実施する工程をさらに含むことを特徴とする請求項12から14の何れか1項に記載の半導体発光素子の製造方法。
- 前記(b)工程は、前記露出された前記基板表面を乾式エッチングによってエッチングする第3エッチング工程をさらに含むことを特徴とする請求項10から15の何れか1項に記載の半導体発光素子の製造方法。
Applications Claiming Priority (2)
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KR1020040103112A KR100624449B1 (ko) | 2004-12-08 | 2004-12-08 | 요철 구조를 포함하는 발광 소자 및 그 제조 방법 |
KR10-2004-0103112 | 2004-12-08 |
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JP2006165582A JP2006165582A (ja) | 2006-06-22 |
JP4970782B2 true JP4970782B2 (ja) | 2012-07-11 |
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US (2) | US7655959B2 (ja) |
EP (1) | EP1670076B1 (ja) |
JP (1) | JP4970782B2 (ja) |
KR (1) | KR100624449B1 (ja) |
CN (1) | CN100481538C (ja) |
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JP2007221142A (ja) * | 2006-02-14 | 2007-08-30 | Samsung Electro Mech Co Ltd | 半導体発光素子及びその製造方法 |
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US7655959B2 (en) | 2010-02-02 |
EP1670076A3 (en) | 2008-12-10 |
CN1812144A (zh) | 2006-08-02 |
KR100624449B1 (ko) | 2006-09-18 |
US8114691B2 (en) | 2012-02-14 |
CN100481538C (zh) | 2009-04-22 |
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US20100081221A1 (en) | 2010-04-01 |
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