JP2007186413A - ナノワイヤー製造方法 - Google Patents

ナノワイヤー製造方法 Download PDF

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Publication number
JP2007186413A
JP2007186413A JP2006352489A JP2006352489A JP2007186413A JP 2007186413 A JP2007186413 A JP 2007186413A JP 2006352489 A JP2006352489 A JP 2006352489A JP 2006352489 A JP2006352489 A JP 2006352489A JP 2007186413 A JP2007186413 A JP 2007186413A
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Prior art keywords
nanowire
forming
polycrystalline
layer
insulating film
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Pending
Application number
JP2006352489A
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English (en)
Japanese (ja)
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JP2007186413A5 (enExample
Inventor
Seei Cho
世泳 趙
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of JP2007186413A publication Critical patent/JP2007186413A/ja
Publication of JP2007186413A5 publication Critical patent/JP2007186413A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2922—Materials being non-crystalline insulating materials, e.g. glass or polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H10P14/3252—Alternating layers, e.g. superlattice
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3458—Monocrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3462—Nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/762—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Composite Materials (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
JP2006352489A 2005-12-28 2006-12-27 ナノワイヤー製造方法 Pending JP2007186413A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050131882A KR100790863B1 (ko) 2005-12-28 2005-12-28 나노 와이어 제조 방법

Publications (2)

Publication Number Publication Date
JP2007186413A true JP2007186413A (ja) 2007-07-26
JP2007186413A5 JP2007186413A5 (enExample) 2010-02-12

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US (2) US7642177B2 (enExample)
JP (1) JP2007186413A (enExample)
KR (1) KR100790863B1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013513249A (ja) * 2009-12-18 2013-04-18 インテル・コーポレーション ナノワイヤデバイスの絶縁

Families Citing this family (14)

* Cited by examiner, † Cited by third party
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US10231344B2 (en) 2007-05-18 2019-03-12 Applied Nanotech Holdings, Inc. Metallic ink
US8404160B2 (en) * 2007-05-18 2013-03-26 Applied Nanotech Holdings, Inc. Metallic ink
US8506849B2 (en) * 2008-03-05 2013-08-13 Applied Nanotech Holdings, Inc. Additives and modifiers for solvent- and water-based metallic conductive inks
US9730333B2 (en) * 2008-05-15 2017-08-08 Applied Nanotech Holdings, Inc. Photo-curing process for metallic inks
US20090286383A1 (en) * 2008-05-15 2009-11-19 Applied Nanotech Holdings, Inc. Treatment of whiskers
US20100000762A1 (en) * 2008-07-02 2010-01-07 Applied Nanotech Holdings, Inc. Metallic pastes and inks
KR101045128B1 (ko) 2008-08-04 2011-06-30 서울대학교산학협력단 나노구조물들의 교차 구조들의 제조
EP2412007B1 (en) 2009-03-27 2020-07-22 Ishihara Chemical Co., Ltd. Buffer layer to enhance photo and/or laser sintering
US8422197B2 (en) * 2009-07-15 2013-04-16 Applied Nanotech Holdings, Inc. Applying optical energy to nanoparticles to produce a specified nanostructure
US9029834B2 (en) 2010-07-06 2015-05-12 International Business Machines Corporation Process for forming a surrounding gate for a nanowire using a sacrificial patternable dielectric
US9598776B2 (en) 2012-07-09 2017-03-21 Pen Inc. Photosintering of micron-sized copper particles
US8889564B2 (en) 2012-08-31 2014-11-18 International Business Machines Corporation Suspended nanowire structure
CN104362512B (zh) * 2014-10-13 2017-09-26 北京大学 一种硅基纳米激光器制备方法
US9496263B1 (en) 2015-10-23 2016-11-15 International Business Machines Corporation Stacked strained and strain-relaxed hexagonal nanowires

Citations (3)

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JP2005103723A (ja) * 2003-10-01 2005-04-21 National Institute Of Advanced Industrial & Technology 金属ナノワイヤーの単結晶化方法及び装置
WO2005067683A2 (en) * 2004-01-05 2005-07-28 Board Of Regents, The University Of Texas System Inorganic nanowires
JP2009532903A (ja) * 2006-04-04 2009-09-10 マイクロン テクノロジー， インク． 成長型ナノＦｉｎトランジスタ

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JPS58164219A (ja) * 1982-03-25 1983-09-29 Agency Of Ind Science & Technol 積層型半導体装置の製造方法
KR100388433B1 (ko) * 2001-10-15 2003-06-25 한국과학기술연구원 금속 나노선의 제조방법
KR100508548B1 (ko) * 2003-04-16 2005-08-17 한국전자통신연구원 쇼트키 장벽 트랜지스터 및 그 제조방법
US6897098B2 (en) 2003-07-28 2005-05-24 Intel Corporation Method of fabricating an ultra-narrow channel semiconductor device
KR20050062825A (ko) * 2003-12-18 2005-06-28 엘지전자 주식회사 나노 와이어 제조 방법
KR20050099888A (ko) * 2004-04-12 2005-10-17 엘지전자 주식회사 나노 와이어 제조 방법
US7189635B2 (en) * 2004-09-17 2007-03-13 Hewlett-Packard Development Company, L.P. Reduction of a feature dimension in a nano-scale device
WO2007057795A1 (en) * 2005-11-16 2007-05-24 Nxp B.V. Method of manufacturing a semiconductor device and semiconductor device obtained with such a method
US7425491B2 (en) * 2006-04-04 2008-09-16 Micron Technology, Inc. Nanowire transistor with surrounding gate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005103723A (ja) * 2003-10-01 2005-04-21 National Institute Of Advanced Industrial & Technology 金属ナノワイヤーの単結晶化方法及び装置
WO2005067683A2 (en) * 2004-01-05 2005-07-28 Board Of Regents, The University Of Texas System Inorganic nanowires
JP2009532903A (ja) * 2006-04-04 2009-09-10 マイクロン テクノロジー， インク． 成長型ナノＦｉｎトランジスタ

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013513249A (ja) * 2009-12-18 2013-04-18 インテル・コーポレーション ナノワイヤデバイスの絶縁
US8883573B2 (en) 2009-12-18 2014-11-11 Intel Corporation Isolation for nanowire devices

Also Published As

Publication number Publication date
US7642177B2 (en) 2010-01-05
US20100051899A1 (en) 2010-03-04
KR100790863B1 (ko) 2008-01-03
US8258049B2 (en) 2012-09-04
KR20070069584A (ko) 2007-07-03
US20070145375A1 (en) 2007-06-28

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