JP2007158333A5 - - Google Patents
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- Publication number
- JP2007158333A5 JP2007158333A5 JP2006322586A JP2006322586A JP2007158333A5 JP 2007158333 A5 JP2007158333 A5 JP 2007158333A5 JP 2006322586 A JP2006322586 A JP 2006322586A JP 2006322586 A JP2006322586 A JP 2006322586A JP 2007158333 A5 JP2007158333 A5 JP 2007158333A5
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- JP
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- Prior art keywords
- region
- sti
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- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 claims 11
- 238000005530 etching Methods 0.000 claims 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 5
- 239000011810 insulating material Substances 0.000 claims 5
- 229910052710 silicon Inorganic materials 0.000 claims 5
- 239000010703 silicon Substances 0.000 claims 5
- 238000002955 isolation Methods 0.000 claims 3
- 230000003647 oxidation Effects 0.000 claims 3
- 238000007254 oxidation reaction Methods 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000013078 crystal Substances 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/164,757 US7342293B2 (en) | 2005-12-05 | 2005-12-05 | Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2007158333A JP2007158333A (ja) | 2007-06-21 |
| JP2007158333A5 true JP2007158333A5 (enExample) | 2008-12-11 |
| JP4355336B2 JP4355336B2 (ja) | 2009-10-28 |
Family
ID=38117863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006322586A Expired - Fee Related JP4355336B2 (ja) | 2005-12-05 | 2006-11-29 | バイポーラ接合トランジスタおよびその形成方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US7342293B2 (enExample) |
| JP (1) | JP4355336B2 (enExample) |
| CN (1) | CN1979889B (enExample) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2006077502A1 (en) * | 2005-01-18 | 2006-07-27 | Nxp B.V. | Bipolar transistor and method of fabricating the same |
| CN100338454C (zh) * | 2005-05-17 | 2007-09-19 | 北京大学 | 旋转式气体收集装置 |
| US7964910B2 (en) * | 2007-10-17 | 2011-06-21 | International Business Machines Corporation | Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure |
| EP2281302B1 (en) | 2008-05-21 | 2012-12-26 | Nxp B.V. | A method of manufacturing a bipolar transistor semiconductor device |
| US7803685B2 (en) * | 2008-06-26 | 2010-09-28 | Freescale Semiconductor, Inc. | Silicided base structure for high frequency transistors |
| US8536012B2 (en) | 2011-07-06 | 2013-09-17 | International Business Machines Corporation | Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases |
| US8921195B2 (en) * | 2012-10-26 | 2014-12-30 | International Business Machines Corporation | Isolation scheme for bipolar transistors in BiCMOS technology |
| US8816401B2 (en) * | 2012-11-30 | 2014-08-26 | International Business Machines Corporation | Heterojunction bipolar transistor |
| US9093491B2 (en) * | 2012-12-05 | 2015-07-28 | International Business Machines Corporation | Bipolar junction transistors with reduced base-collector junction capacitance |
| US8956945B2 (en) | 2013-02-04 | 2015-02-17 | International Business Machines Corporation | Trench isolation for bipolar junction transistors in BiCMOS technology |
| US8796149B1 (en) | 2013-02-18 | 2014-08-05 | International Business Machines Corporation | Collector-up bipolar junction transistors in BiCMOS technology |
| US8927381B2 (en) | 2013-03-20 | 2015-01-06 | International Business Machines Corporation | Self-aligned bipolar junction transistors |
| US8975146B2 (en) | 2013-05-01 | 2015-03-10 | International Business Machines Corporation | Trench isolation structures and methods for bipolar junction transistors |
| US9029229B2 (en) * | 2013-05-29 | 2015-05-12 | International Business Machines Corporation | Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions |
| US9059234B2 (en) | 2013-10-22 | 2015-06-16 | International Business Machines Corporation | Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation region |
| US9059196B2 (en) | 2013-11-04 | 2015-06-16 | International Business Machines Corporation | Bipolar junction transistors with self-aligned terminals |
| US9059233B2 (en) * | 2013-11-19 | 2015-06-16 | International Business Machines Corporation | Formation of an asymmetric trench in a semiconductor substrate and a bipolar semiconductor device having an asymmetric trench isolation region |
| US9111986B2 (en) | 2014-01-09 | 2015-08-18 | International Business Machines Corporation | Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base |
| US9722057B2 (en) | 2015-06-23 | 2017-08-01 | Global Foundries Inc. | Bipolar junction transistors with a buried dielectric region in the active device region |
| US9368608B1 (en) | 2015-06-25 | 2016-06-14 | Globalfoundries Inc. | Heterojunction bipolar transistor with improved performance and breakdown voltage |
| EP3547371B1 (en) * | 2018-03-27 | 2025-10-15 | NXP USA, Inc. | Bipolar transistor and method of manufacturing a bipolar transistor |
| US12426278B2 (en) | 2022-10-26 | 2025-09-23 | Globalfoundries U.S. Inc. | Resistive memory elements accessed by bipolar junction transistors |
| CN118315274B (zh) * | 2024-06-11 | 2024-08-20 | 杭州积海半导体有限公司 | 双极器件及其制作方法 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3919060A (en) | 1974-06-14 | 1975-11-11 | Ibm | Method of fabricating semiconductor device embodying dielectric isolation |
| JPS59161867A (ja) * | 1983-03-07 | 1984-09-12 | Hitachi Ltd | 半導体装置 |
| JPH0240922A (ja) * | 1988-07-31 | 1990-02-09 | Nec Corp | 半導体装置 |
| US5892264A (en) * | 1993-10-04 | 1999-04-06 | Harris Corporation | High frequency analog transistors, method of fabrication and circuit implementation |
| KR20010021740A (ko) * | 1997-07-11 | 2001-03-15 | 에를링 블로메, 타게 뢰브그렌 | 무선 주파수에서 사용되는 집적 회로 소자를 제조하는 방법 |
| FR2779572B1 (fr) * | 1998-06-05 | 2003-10-17 | St Microelectronics Sa | Transistor bipolaire vertical a faible bruit et procede de fabrication correspondant |
| US6191447B1 (en) * | 1999-05-28 | 2001-02-20 | Micro-Ohm Corporation | Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same |
| JP2001332563A (ja) * | 2000-05-23 | 2001-11-30 | Matsushita Electric Ind Co Ltd | バイポーラトランジスタ及びその製造方法 |
| US6617220B2 (en) * | 2001-03-16 | 2003-09-09 | International Business Machines Corporation | Method for fabricating an epitaxial base bipolar transistor with raised extrinsic base |
| US20050250289A1 (en) * | 2002-10-30 | 2005-11-10 | Babcock Jeffrey A | Control of dopant diffusion from buried layers in bipolar integrated circuits |
| JP4060580B2 (ja) * | 2001-11-29 | 2008-03-12 | 株式会社ルネサステクノロジ | ヘテロ接合バイポーラトランジスタ |
| US6579771B1 (en) * | 2001-12-10 | 2003-06-17 | Intel Corporation | Self aligned compact bipolar junction transistor layout, and method of making same |
| US6767798B2 (en) * | 2002-04-09 | 2004-07-27 | Maxim Integrated Products, Inc. | Method of forming self-aligned NPN transistor with raised extrinsic base |
| US6699741B1 (en) * | 2002-08-16 | 2004-03-02 | National Semiconductor Corporation | Single poly bipolar transistor and method that uses a selectively epitaxially grown highly-boron-doped silicon layer as a diffusion source for an extrinsic base region |
| US6909164B2 (en) * | 2002-11-25 | 2005-06-21 | International Business Machines Corporation | High performance vertical PNP transistor and method |
| US6864560B2 (en) * | 2003-03-28 | 2005-03-08 | International Business Machines Corporation | Bipolar transistor structure with a shallow isolation extension region providing reduced parasitic capacitance |
| US6858485B2 (en) * | 2003-05-07 | 2005-02-22 | International Business Machines Corporation | Method for creation of a very narrow emitter feature |
| JP4643130B2 (ja) * | 2003-06-19 | 2011-03-02 | 株式会社日立製作所 | 半導体装置およびその製造方法 |
| US6960820B2 (en) * | 2003-07-01 | 2005-11-01 | International Business Machines Corporation | Bipolar transistor self-alignment with raised extrinsic base extension and methods of forming same |
| WO2005006444A1 (ja) * | 2003-07-11 | 2005-01-20 | Matsushita Electric Industrial Co., Ltd. | ヘテロバイポーラトランジスタおよびその製造方法 |
| US7022578B2 (en) * | 2003-10-09 | 2006-04-04 | Chartered Semiconductor Manufacturing Ltd. | Heterojunction bipolar transistor using reverse emitter window |
| US7075126B2 (en) * | 2004-02-27 | 2006-07-11 | International Business Machines Corporation | Transistor structure with minimized parasitics and method of fabricating the same |
| US7118995B2 (en) * | 2004-05-19 | 2006-10-10 | International Business Machines Corporation | Yield improvement in silicon-germanium epitaxial growth |
| US7102205B2 (en) * | 2004-09-01 | 2006-09-05 | International Business Machines Corporation | Bipolar transistor with extrinsic stress layer |
| DE102005040624A1 (de) * | 2004-09-02 | 2006-03-09 | Fuji Electric Holdings Co., Ltd., Kawasaki | Halbleiterbauteil und Verfahren zu seiner Herstellung |
-
2005
- 2005-12-05 US US11/164,757 patent/US7342293B2/en not_active Expired - Fee Related
-
2006
- 2006-11-14 CN CN200610147094.0A patent/CN1979889B/zh not_active Expired - Fee Related
- 2006-11-29 JP JP2006322586A patent/JP4355336B2/ja not_active Expired - Fee Related
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