JP4355336B2 - バイポーラ接合トランジスタおよびその形成方法 - Google Patents

バイポーラ接合トランジスタおよびその形成方法 Download PDF

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Publication number
JP4355336B2
JP4355336B2 JP2006322586A JP2006322586A JP4355336B2 JP 4355336 B2 JP4355336 B2 JP 4355336B2 JP 2006322586 A JP2006322586 A JP 2006322586A JP 2006322586 A JP2006322586 A JP 2006322586A JP 4355336 B2 JP4355336 B2 JP 4355336B2
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active base
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JP2007158333A (ja
JP2007158333A5 (enExample
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トーマス・アンソニー・ウォールナー
ステファン・ダブリュー・ベデル
トーマス・エヌ・アダム
ジョエル・ピー・デソーザ
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International Business Machines Corp
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International Business Machines Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/021—Manufacture or treatment of heterojunction BJTs [HBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/80—Heterojunction BJTs
    • H10D10/821—Vertical heterojunction BJTs
    • H10D10/891—Vertical heterojunction BJTs comprising lattice-mismatched active layers, e.g. SiGe strained-layer transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/113—Isolations within a component, i.e. internal isolations
    • H10D62/115—Dielectric isolations, e.g. air gaps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs

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  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
JP2006322586A 2005-12-05 2006-11-29 バイポーラ接合トランジスタおよびその形成方法 Expired - Fee Related JP4355336B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/164,757 US7342293B2 (en) 2005-12-05 2005-12-05 Bipolar junction transistors (BJTS) with second shallow trench isolation (STI) regions, and methods for forming same

Publications (3)

Publication Number Publication Date
JP2007158333A JP2007158333A (ja) 2007-06-21
JP2007158333A5 JP2007158333A5 (enExample) 2008-12-11
JP4355336B2 true JP4355336B2 (ja) 2009-10-28

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Family Applications (1)

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JP2006322586A Expired - Fee Related JP4355336B2 (ja) 2005-12-05 2006-11-29 バイポーラ接合トランジスタおよびその形成方法

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Country Link
US (1) US7342293B2 (enExample)
JP (1) JP4355336B2 (enExample)
CN (1) CN1979889B (enExample)

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CN100338454C (zh) * 2005-05-17 2007-09-19 北京大学 旋转式气体收集装置
US7964910B2 (en) * 2007-10-17 2011-06-21 International Business Machines Corporation Planar field effect transistor structure having an angled crystallographic etch-defined source/drain recess and a method of forming the transistor structure
EP2281302B1 (en) 2008-05-21 2012-12-26 Nxp B.V. A method of manufacturing a bipolar transistor semiconductor device
US7803685B2 (en) * 2008-06-26 2010-09-28 Freescale Semiconductor, Inc. Silicided base structure for high frequency transistors
US8536012B2 (en) 2011-07-06 2013-09-17 International Business Machines Corporation Bipolar junction transistors with a link region connecting the intrinsic and extrinsic bases
US8921195B2 (en) * 2012-10-26 2014-12-30 International Business Machines Corporation Isolation scheme for bipolar transistors in BiCMOS technology
US8816401B2 (en) * 2012-11-30 2014-08-26 International Business Machines Corporation Heterojunction bipolar transistor
US9093491B2 (en) * 2012-12-05 2015-07-28 International Business Machines Corporation Bipolar junction transistors with reduced base-collector junction capacitance
US8956945B2 (en) 2013-02-04 2015-02-17 International Business Machines Corporation Trench isolation for bipolar junction transistors in BiCMOS technology
US8796149B1 (en) 2013-02-18 2014-08-05 International Business Machines Corporation Collector-up bipolar junction transistors in BiCMOS technology
US8927381B2 (en) 2013-03-20 2015-01-06 International Business Machines Corporation Self-aligned bipolar junction transistors
US8975146B2 (en) 2013-05-01 2015-03-10 International Business Machines Corporation Trench isolation structures and methods for bipolar junction transistors
US9029229B2 (en) * 2013-05-29 2015-05-12 International Business Machines Corporation Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions
US9059234B2 (en) 2013-10-22 2015-06-16 International Business Machines Corporation Formation of a high aspect ratio trench in a semiconductor substrate and a bipolar semiconductor device having a high aspect ratio trench isolation region
US9059196B2 (en) 2013-11-04 2015-06-16 International Business Machines Corporation Bipolar junction transistors with self-aligned terminals
US9059233B2 (en) * 2013-11-19 2015-06-16 International Business Machines Corporation Formation of an asymmetric trench in a semiconductor substrate and a bipolar semiconductor device having an asymmetric trench isolation region
US9111986B2 (en) 2014-01-09 2015-08-18 International Business Machines Corporation Self-aligned emitter-base-collector bipolar junction transistors with a single crystal raised extrinsic base
US9722057B2 (en) 2015-06-23 2017-08-01 Global Foundries Inc. Bipolar junction transistors with a buried dielectric region in the active device region
US9368608B1 (en) 2015-06-25 2016-06-14 Globalfoundries Inc. Heterojunction bipolar transistor with improved performance and breakdown voltage
EP3547371B1 (en) * 2018-03-27 2025-10-15 NXP USA, Inc. Bipolar transistor and method of manufacturing a bipolar transistor
US12426278B2 (en) 2022-10-26 2025-09-23 Globalfoundries U.S. Inc. Resistive memory elements accessed by bipolar junction transistors
CN118315274B (zh) * 2024-06-11 2024-08-20 杭州积海半导体有限公司 双极器件及其制作方法

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US3919060A (en) 1974-06-14 1975-11-11 Ibm Method of fabricating semiconductor device embodying dielectric isolation
JPS59161867A (ja) * 1983-03-07 1984-09-12 Hitachi Ltd 半導体装置
JPH0240922A (ja) * 1988-07-31 1990-02-09 Nec Corp 半導体装置
US5892264A (en) * 1993-10-04 1999-04-06 Harris Corporation High frequency analog transistors, method of fabrication and circuit implementation
KR20010021740A (ko) * 1997-07-11 2001-03-15 에를링 블로메, 타게 뢰브그렌 무선 주파수에서 사용되는 집적 회로 소자를 제조하는 방법
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US6191447B1 (en) * 1999-05-28 2001-02-20 Micro-Ohm Corporation Power semiconductor devices that utilize tapered trench-based insulating regions to improve electric field profiles in highly doped drift region mesas and methods of forming same
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Also Published As

Publication number Publication date
JP2007158333A (ja) 2007-06-21
US7342293B2 (en) 2008-03-11
US20070126080A1 (en) 2007-06-07
CN1979889A (zh) 2007-06-13
CN1979889B (zh) 2011-07-13

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