JP2007129217A - 半導体デバイス製造におけるフォトリソグラフィ法 - Google Patents
半導体デバイス製造におけるフォトリソグラフィ法 Download PDFInfo
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- JP2007129217A JP2007129217A JP2006290632A JP2006290632A JP2007129217A JP 2007129217 A JP2007129217 A JP 2007129217A JP 2006290632 A JP2006290632 A JP 2006290632A JP 2006290632 A JP2006290632 A JP 2006290632A JP 2007129217 A JP2007129217 A JP 2007129217A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 77
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000005530 etching Methods 0.000 claims abstract description 28
- 229920000642 polymer Polymers 0.000 claims abstract description 20
- 238000000059 patterning Methods 0.000 claims abstract description 6
- 238000000206 photolithography Methods 0.000 claims description 30
- 229920002120 photoresistant polymer Polymers 0.000 claims description 26
- 238000007747 plating Methods 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 3
- 239000002041 carbon nanotube Substances 0.000 claims description 3
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 3
- 238000005468 ion implantation Methods 0.000 claims description 3
- 239000002071 nanotube Substances 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 10
- 239000012212 insulator Substances 0.000 description 9
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000003795 chemical substances by application Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000003631 wet chemical etching Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Drying Of Semiconductors (AREA)
- Weting (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
【解決手段】基板上に感光性層を形成する工程と、所定のパターンを使用して前記感光性層をパターン化する工程と、前記感光性層を現像して前記所定のパターンに相当するパターンを有するシード層を形成する工程と、前記シード層の上にのみ複数の長鎖分子からなり、かつ実質的に前記シード層に垂直な厚層を形成する工程と、を含む、半導体デバイス製造におけるフォトリソグラフィ法を提供する。
【選択図】図1
Description
102、104、106、108、110、802、804、806、808、810、812 工程
200、900 半導体デバイス
202、902、1500 層
204、904 下位層
206、906 感光性層
300、908 パターン
400、1100 シード層
500、1102 エッチストップ層
1000 開口部
Claims (14)
- 基板上に感光性層を形成する工程と、
所定のパターンを使用して前記感光性層をパターン化する工程と、
前記感光性層を現像して、前記所定のパターンに相当するパターンを有するシード層を形成する工程と、
前記シード層の上にのみ、複数の長鎖分子からなり、かつ実質的に前記シード層に垂直な厚層を形成する工程と、を含む部分半導体デバイス製造におけるフォトリソグラフィ法。 - 前記厚層をエッチストップ層として、前記基板をエッチングする工程を更に含む請求項1記載の部分半導体デバイス製造におけるフォトリソグラフィ法。
- 前記厚層をイオン注入層として、前記基板に注入する工程を更に含む請求項1記載の部分半導体デバイス製造におけるフォトリソグラフィ法。
- 前記感光性層を現像して前記シード層を形成する工程は、前記感光性層を現像して基板の一部を露出させ、少なくとも一部の現像後に残された前記感光性層から前記シード層を形成する工程を更に含む請求項2又は3に記載の部分半導体デバイス製造におけるフォトリソグラフィ法。
- 前記エッチストップ層が、前記シード層より比較的厚いか又は硬い請求項4記載の部分半導体デバイス製造におけるフォトリソグラフィ法。
- 前記シード層をめっき電極として前記エッチストップ層を成長させる工程を含む請求項4記載の部分半導体デバイス製造におけるフォトリソグラフィ法。
- 前記シード層を溶液中に浸漬する工程を含む請求項4記載の部分半導体デバイス製造におけるフォトリソグラフィ法。
- 少なくとも1つの長鎖分子と、少なくとも1つの長鎖ポリマーと、少なくとも1つのカーボンナノチューブと、少なくとも1つの酸化亜鉛(ZnO)ナノチューブと、1列に配列された長鎖分子、又は少なくとも1つの1列に配列された長鎖ポリマーと、を形成する工程を含む請求項4記載の部分半導体デバイス製造におけるフォトリソグラフィ法。
- 前記感光性層を現像して前記シード層を形成する工程は、前記感光性層を現像して基板の一部を露出させ、そこで前記シード層を形成する工程を更に含む請求項2又は3に記載の部分半導体デバイス製造におけるフォトリソグラフィ法。
- 前記エッチストップ層を形成した後、前記感光性層の残りの部分を除去する工程を更に含む請求項9記載の部分半導体デバイス製造におけるフォトリソグラフィ法。
- 前記エッチストップ層を形成する前に、前記感光性層の残りの部分を除去する工程を更に含む請求項9記載の部分半導体デバイス製造におけるフォトリソグラフィ法。
- 前記基板上に感光性層を形成する工程は、感光性層として選択されたネガ型フォトレジストを使用する工程を含む請求項9記載の部分半導体デバイス製造におけるフォトリソグラフィ法。
- 前記基板上に感光性層を形成する工程は、感光性層として選択されたポジ型フォトレジストを使用する工程を含む請求項9記載の部分半導体デバイス製造におけるフォトリソグラフィ法。
- 基板上に感光性層を形成する工程と、
前記感光性層を現像して前記基板の一部を露出させ、そこで前記基板の露出した一部でシード層を形成する工程と、
前記シード層の上にのみエッチストップ層を形成する工程と、
前記エッチストップ層をマスクとして前記基板をエッチングする工程と、を含む部分半導体デバイス製造におけるフォトリソグラフィ法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73182805P | 2005-10-31 | 2005-10-31 | |
US11/347,513 US7220680B1 (en) | 2005-10-31 | 2006-02-03 | Method for photolithography in semiconductor manufacturing |
Publications (2)
Publication Number | Publication Date |
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JP2007129217A true JP2007129217A (ja) | 2007-05-24 |
JP4562716B2 JP4562716B2 (ja) | 2010-10-13 |
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Country Status (6)
Country | Link |
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US (1) | US7220680B1 (ja) |
JP (1) | JP4562716B2 (ja) |
KR (1) | KR100833120B1 (ja) |
CN (1) | CN1959940B (ja) |
NL (1) | NL1031939C2 (ja) |
TW (1) | TWI298514B (ja) |
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US20080296562A1 (en) * | 2007-05-31 | 2008-12-04 | Murduck James M | Methods and apparatus for fabricating carbon nanotubes and carbon nanotube devices |
US8518818B2 (en) | 2011-09-16 | 2013-08-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Reverse damascene process |
CN106783120B (zh) * | 2016-12-13 | 2018-03-27 | 深圳顺络电子股份有限公司 | 一种电子元件电极的制作方法及电子元件 |
Citations (4)
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JPH04240729A (ja) * | 1991-01-24 | 1992-08-28 | Toshiba Corp | パターン形成方法 |
JPH07263379A (ja) * | 1994-03-23 | 1995-10-13 | Sumitomo Electric Ind Ltd | 微細構造体の形成方法 |
JPH08293484A (ja) * | 1995-04-20 | 1996-11-05 | Matsushita Electron Corp | プラズマ処理方法 |
JPH10242022A (ja) * | 1997-02-25 | 1998-09-11 | Matsushita Electric Ind Co Ltd | パターン形成方法及び半導体処理方法 |
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US5370969A (en) * | 1992-07-28 | 1994-12-06 | Sharp Kabushiki Kaisha | Trilayer lithographic process |
US6445006B1 (en) * | 1995-12-20 | 2002-09-03 | Advanced Technology Materials, Inc. | Microelectronic and microelectromechanical devices comprising carbon nanotube components, and methods of making same |
EP0845288A1 (en) * | 1996-11-27 | 1998-06-03 | Thiopaq Sulfur Systems B.V. | Process for biological removal of sulphide |
KR20010037979A (ko) * | 1999-10-21 | 2001-05-15 | 박종섭 | 반도체 소자의 제조방법 |
TW575786B (en) * | 2000-03-14 | 2004-02-11 | Takashi Nishi | Exposure controlling photomask and production method thereof |
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US6977135B2 (en) * | 2003-07-10 | 2005-12-20 | Marc David Levenson | Photosensitive material for immersion photolithography |
US6905958B2 (en) * | 2003-07-25 | 2005-06-14 | Intel Corporation | Protecting metal conductors with sacrificial organic monolayers |
KR100681970B1 (ko) * | 2005-06-08 | 2007-02-15 | 후지쯔 가부시끼가이샤 | 에칭 내성 막 및 그의 제조 방법, 표면 경화 레지스트 패턴및 그의 제조 방법, 및 반도체 장치 및 그의 제조 방법 |
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- 2006-02-03 US US11/347,513 patent/US7220680B1/en active Active
- 2006-06-01 NL NL1031939A patent/NL1031939C2/nl active Search and Examination
- 2006-07-13 TW TW095125726A patent/TWI298514B/zh active
- 2006-07-26 CN CN2006100995053A patent/CN1959940B/zh active Active
- 2006-08-01 KR KR1020060072598A patent/KR100833120B1/ko active IP Right Grant
- 2006-10-26 JP JP2006290632A patent/JP4562716B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04240729A (ja) * | 1991-01-24 | 1992-08-28 | Toshiba Corp | パターン形成方法 |
JPH07263379A (ja) * | 1994-03-23 | 1995-10-13 | Sumitomo Electric Ind Ltd | 微細構造体の形成方法 |
JPH08293484A (ja) * | 1995-04-20 | 1996-11-05 | Matsushita Electron Corp | プラズマ処理方法 |
JPH10242022A (ja) * | 1997-02-25 | 1998-09-11 | Matsushita Electric Ind Co Ltd | パターン形成方法及び半導体処理方法 |
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Publication number | Publication date |
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JP4562716B2 (ja) | 2010-10-13 |
NL1031939C2 (nl) | 2008-04-15 |
CN1959940A (zh) | 2007-05-09 |
US7220680B1 (en) | 2007-05-22 |
KR100833120B1 (ko) | 2008-05-28 |
KR20070046703A (ko) | 2007-05-03 |
TW200723362A (en) | 2007-06-16 |
US20070099432A1 (en) | 2007-05-03 |
NL1031939A1 (nl) | 2007-05-02 |
TWI298514B (en) | 2008-07-01 |
CN1959940B (zh) | 2011-02-02 |
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