JP2007096036A5 - - Google Patents

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Publication number
JP2007096036A5
JP2007096036A5 JP2005284153A JP2005284153A JP2007096036A5 JP 2007096036 A5 JP2007096036 A5 JP 2007096036A5 JP 2005284153 A JP2005284153 A JP 2005284153A JP 2005284153 A JP2005284153 A JP 2005284153A JP 2007096036 A5 JP2007096036 A5 JP 2007096036A5
Authority
JP
Japan
Prior art keywords
mos transistor
booster circuit
stage
circuit according
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005284153A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007096036A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2005284153A priority Critical patent/JP2007096036A/ja
Priority claimed from JP2005284153A external-priority patent/JP2007096036A/ja
Priority to CN200610154013XA priority patent/CN1941579B/zh
Priority to US11/526,060 priority patent/US7602231B2/en
Publication of JP2007096036A publication Critical patent/JP2007096036A/ja
Publication of JP2007096036A5 publication Critical patent/JP2007096036A5/ja
Pending legal-status Critical Current

Links

JP2005284153A 2005-09-29 2005-09-29 昇圧回路 Pending JP2007096036A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2005284153A JP2007096036A (ja) 2005-09-29 2005-09-29 昇圧回路
CN200610154013XA CN1941579B (zh) 2005-09-29 2006-09-19 升压电路
US11/526,060 US7602231B2 (en) 2005-09-29 2006-09-25 Charge-pump circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005284153A JP2007096036A (ja) 2005-09-29 2005-09-29 昇圧回路

Publications (2)

Publication Number Publication Date
JP2007096036A JP2007096036A (ja) 2007-04-12
JP2007096036A5 true JP2007096036A5 (enExample) 2008-10-09

Family

ID=37893106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005284153A Pending JP2007096036A (ja) 2005-09-29 2005-09-29 昇圧回路

Country Status (3)

Country Link
US (1) US7602231B2 (enExample)
JP (1) JP2007096036A (enExample)
CN (1) CN1941579B (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4867657B2 (ja) * 2006-12-28 2012-02-01 ソニー株式会社 電圧供給回路、表示装置、および電子機器、並びに電圧供給方法
KR101767037B1 (ko) 2010-03-02 2017-08-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 승압 회로 및 승압 회로를 포함하는 ｒｆｉｄ 태그
US8581658B2 (en) * 2011-04-08 2013-11-12 Taiwan Semiconductor Manufacturing Company, Ltd. Charge pump
US8947158B2 (en) 2012-09-03 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
TWI663820B (zh) 2013-08-21 2019-06-21 日商半導體能源研究所股份有限公司 電荷泵電路以及具備電荷泵電路的半導體裝置
KR102267237B1 (ko) 2014-03-07 2021-06-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US9312280B2 (en) 2014-07-25 2016-04-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9678523B2 (en) * 2015-10-15 2017-06-13 Microsoft Technology Licensing, Llc Self biasing driver circuit for voltage boosting
JP6699194B2 (ja) * 2016-01-21 2020-05-27 凸版印刷株式会社 チャージポンプ
CN107453601B (zh) * 2017-08-22 2023-09-19 合肥博雅半导体有限公司 电荷泵和存储器
CN111371313B (zh) * 2020-04-20 2021-03-26 上海传泰电子科技有限公司 一种高压电荷泵电路
WO2022009731A1 (ja) 2020-07-10 2022-01-13 ソニーグループ株式会社 駆動回路アレイ基板、表示装置および電子機器
CN116137493A (zh) * 2021-11-17 2023-05-19 科奇芯有限公司 电荷泵电路
US11810626B2 (en) * 2022-02-11 2023-11-07 Sandisk Technologies Llc Generating boosted voltages with a hybrid charge pump
KR20230138317A (ko) 2022-03-23 2023-10-05 삼성전자주식회사 전압 생성기 및 이를 포함하는 메모리 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4581546A (en) * 1983-11-02 1986-04-08 Inmos Corporation CMOS substrate bias generator having only P channel transistors in the charge pump
JPS61119072A (ja) * 1984-11-15 1986-06-06 Toshiba Corp 半導体容量装置
US5237193A (en) * 1988-06-24 1993-08-17 Siliconix Incorporated Lightly doped drain MOSFET with reduced on-resistance
US5059815A (en) * 1990-04-05 1991-10-22 Advanced Micro Devices, Inc. High voltage charge pumps with series capacitors
US7102422B1 (en) * 1994-04-20 2006-09-05 Nippon Steel Corporation Semiconductor booster circuit having cascaded MOS transistors
US6028473A (en) * 1995-03-09 2000-02-22 Macronix International Co., Ltd. Series capacitor charge pump with dynamic biasing
JPH08306870A (ja) * 1995-04-28 1996-11-22 Fuji Xerox Co Ltd 半導体集積昇圧回路装置
JP3394133B2 (ja) * 1996-06-12 2003-04-07 沖電気工業株式会社 昇圧回路
US5962887A (en) * 1996-06-18 1999-10-05 Micron Technology, Inc. Metal-oxide-semiconductor capacitor
EP0822601B1 (en) * 1996-07-30 2006-05-24 STMicroelectronics S.r.l. MOS capacitor with wide voltage and frequency operating ranges
JP3323119B2 (ja) * 1997-11-28 2002-09-09 株式会社東芝 半導体集積回路装置
JP3223504B2 (ja) * 1998-03-31 2001-10-29 日本電気株式会社 昇圧回路
US5978283A (en) * 1998-07-02 1999-11-02 Aplus Flash Technology, Inc. Charge pump circuits
JP3850580B2 (ja) * 1999-03-30 2006-11-29 株式会社東芝 半導体装置
US6320796B1 (en) * 2000-11-10 2001-11-20 Marvell International, Ltd. Variable slope charge pump control

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