JP2007073942A - 半導体装置 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 127
- 239000012535 impurity Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 32
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 32
- 230000015556 catabolic process Effects 0.000 description 16
- 238000000034 method Methods 0.000 description 15
- 238000004519 manufacturing process Methods 0.000 description 11
- 238000009826 distribution Methods 0.000 description 10
- 229910052581 Si3N4 Inorganic materials 0.000 description 8
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- -1 boron ions Chemical class 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
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Abstract
【解決手段】半導体基板11上に、p-型ボディ層12が形成され、p-型ボディ層12に隣接してn-型オフセット層13が形成されている。p-型ボディ層12には、n-型オフセット層13より高い不純物濃度を有するn+型ソース層14が形成されている。n-型オフセット層13には、n-型オフセット層13より高い不純物濃度を有するn+型ドレイン層15が形成されている。n+型ソース層14とn+型ドレイン層15との間のn-型オフセット層13にはシリコン酸化膜16が埋め込まれている。n+型ソース層14とシリコン酸化膜16との間のp-型ボディ層12上及びn-型オフセット層13上にはゲート絶縁膜17及びゲート電極18が形成されている。さらに、n-型オフセット層13における不純物濃度プロファイルの第1ピークはシリコン酸化膜16より深い位置に形成されている。
【選択図】 図1
Description
前記ボディ層の表面領域に形成された第2導電型のソース層と、
前記半導体基板上に形成された第2導電型のオフセット層と、
前記オフセット層の表面領域に形成された第2導電型のドレイン層と、
前記ソース層と前記ドレイン層との間の前記オフセット層の表面領域に形成されたトレンチ内に埋め込まれた絶縁膜と、
前記ソース層と前記絶縁膜との間の前記ボディ層上及び前記オフセット層上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極とを具備し、
前記オフセット層における不純物濃度プロファイルの第1ピークは前記絶縁膜より深い位置に形成されている半導体装置。
前記半導体基板上に、前記第1半導体層に隣接して形成された第2導電型の第2半導体層と、
前記第1半導体層の表面領域に形成され、前記第2半導体層より高い不純物濃度を有する第2導電型の第3半導体層と、
前記第2半導体層の表面領域に形成され、前記第2半導体層より高い不純物濃度を有する第2導電型の第4半導体層と、
前記第3半導体層と前記第4半導体層との間の前記第2半導体層の表面領域に埋め込まれた絶縁膜と、
前記第3半導体層と前記絶縁膜との間の前記第1半導体層上及び前記第2半導体層上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極とを具備し、
前記第2半導体層における不純物濃度プロファイルの第1ピークは前記絶縁膜より深い位置に形成されている半導体装置。
Claims (5)
- 半導体基板上に形成された第1導電型の第1半導体層と、
前記半導体基板上に、前記第1半導体層に隣接して形成された第2導電型の第2半導体層と、
前記第1半導体層の表面領域に形成され、前記第2半導体層より高い不純物濃度を有する第2導電型の第3半導体層と、
前記第2半導体層の表面領域に形成され、前記第2半導体層より高い不純物濃度を有する第2導電型の第4半導体層と、
前記第3半導体層と前記第4半導体層との間の前記第2半導体層の表面領域に埋め込まれた絶縁膜と、
前記第3半導体層と前記絶縁膜との間の前記第1半導体層上及び前記第2半導体層上に形成されたゲート絶縁膜と、
前記ゲート絶縁膜上に形成されたゲート電極とを具備し、
前記第2半導体層における不純物濃度プロファイルの第1ピークは前記絶縁膜より深い位置に形成されていることを特徴とする半導体装置。 - 前記第2半導体層には、前記不純物濃度プロファイルの前記第1ピークより小さい第2ピークが前記絶縁膜より浅い位置に形成されていることを特徴とする請求項1に記載の半導体装置。
- 前記第2半導体層に形成された前記不純物濃度プロファイルの前記第1ピークは、前記絶縁膜の底面位置と前記第2半導体層の底面位置との中間部分に存在することを特徴する請求項1または2に記載の半導体装置。
- 前記絶縁膜は、前記ゲート電極と前記第4半導体層との間に、前記ゲート電極と接して形成されていることを特徴とする請求項1乃至3のいずれかに記載の半導体装置。
- 前記絶縁膜は、前記ゲート電極と前記第4半導体層との間に、前記第4半導体層とは離間して形成されていることを特徴とする請求項1乃至4のいずれかに記載の半導体装置。
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JP2006215204A JP4874736B2 (ja) | 2005-08-11 | 2006-08-08 | 半導体装置 |
US11/501,715 US7646059B2 (en) | 2005-08-11 | 2006-08-10 | Semiconductor device including field effect transistor for use as a high-speed switching device and a power device |
US12/645,072 US8502309B2 (en) | 2005-08-11 | 2009-12-22 | Semiconductor device including field effect transistor for use as a high-speed switching device and a power device |
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JP2006215204A JP4874736B2 (ja) | 2005-08-11 | 2006-08-08 | 半導体装置 |
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Cited By (6)
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JP2009004792A (ja) * | 2007-06-25 | 2009-01-08 | Dongbu Hitek Co Ltd | 半導体素子及びその製造方法 |
JP2009010379A (ja) * | 2007-06-26 | 2009-01-15 | Dongbu Hitek Co Ltd | 半導体素子及びその製造方法 |
WO2011111135A1 (ja) * | 2010-03-11 | 2011-09-15 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP2011204924A (ja) * | 2010-03-25 | 2011-10-13 | Toshiba Corp | 半導体装置 |
JP2011210754A (ja) * | 2010-03-27 | 2011-10-20 | Nec Corp | 電界効果トランジスタ、電界効果トランジスタの製造方法、および電子装置 |
US8471334B2 (en) | 2010-09-14 | 2013-06-25 | Kabushiki Kaisha Toshiba | Lateral power MOSFET device having a liner layer formed along the current path to reduce electric resistance and method for manufacturing the same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP4874736B2 (ja) * | 2005-08-11 | 2012-02-15 | 株式会社東芝 | 半導体装置 |
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JP4874736B2 (ja) * | 2005-08-11 | 2012-02-15 | 株式会社東芝 | 半導体装置 |
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Cited By (8)
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JP2009004792A (ja) * | 2007-06-25 | 2009-01-08 | Dongbu Hitek Co Ltd | 半導体素子及びその製造方法 |
JP2009010379A (ja) * | 2007-06-26 | 2009-01-15 | Dongbu Hitek Co Ltd | 半導体素子及びその製造方法 |
WO2011111135A1 (ja) * | 2010-03-11 | 2011-09-15 | パナソニック株式会社 | 半導体装置及びその製造方法 |
JP2011204924A (ja) * | 2010-03-25 | 2011-10-13 | Toshiba Corp | 半導体装置 |
US8637928B2 (en) | 2010-03-25 | 2014-01-28 | Kabushiki Kaisha Toshiba | Semiconductor device |
US8847309B2 (en) | 2010-03-25 | 2014-09-30 | Kabushiki Kaisha Toshiba | Semiconductor device |
JP2011210754A (ja) * | 2010-03-27 | 2011-10-20 | Nec Corp | 電界効果トランジスタ、電界効果トランジスタの製造方法、および電子装置 |
US8471334B2 (en) | 2010-09-14 | 2013-06-25 | Kabushiki Kaisha Toshiba | Lateral power MOSFET device having a liner layer formed along the current path to reduce electric resistance and method for manufacturing the same |
Also Published As
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US8502309B2 (en) | 2013-08-06 |
US20070034894A1 (en) | 2007-02-15 |
JP4874736B2 (ja) | 2012-02-15 |
US7646059B2 (en) | 2010-01-12 |
US20100096696A1 (en) | 2010-04-22 |
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