JP2007059889A5 - - Google Patents

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Publication number
JP2007059889A5
JP2007059889A5 JP2006197760A JP2006197760A JP2007059889A5 JP 2007059889 A5 JP2007059889 A5 JP 2007059889A5 JP 2006197760 A JP2006197760 A JP 2006197760A JP 2006197760 A JP2006197760 A JP 2006197760A JP 2007059889 A5 JP2007059889 A5 JP 2007059889A5
Authority
JP
Japan
Prior art keywords
transistor
electrically connected
photodiode
switch
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2006197760A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007059889A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006197760A priority Critical patent/JP2007059889A/ja
Priority claimed from JP2006197760A external-priority patent/JP2007059889A/ja
Publication of JP2007059889A publication Critical patent/JP2007059889A/ja
Publication of JP2007059889A5 publication Critical patent/JP2007059889A5/ja
Withdrawn legal-status Critical Current

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JP2006197760A 2005-07-27 2006-07-20 半導体装置 Withdrawn JP2007059889A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006197760A JP2007059889A (ja) 2005-07-27 2006-07-20 半導体装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005217757 2005-07-27
JP2006197760A JP2007059889A (ja) 2005-07-27 2006-07-20 半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2011053921A Division JP2011164111A (ja) 2005-07-27 2011-03-11 半導体装置

Publications (2)

Publication Number Publication Date
JP2007059889A JP2007059889A (ja) 2007-03-08
JP2007059889A5 true JP2007059889A5 (enExample) 2009-09-03

Family

ID=37923051

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006197760A Withdrawn JP2007059889A (ja) 2005-07-27 2006-07-20 半導体装置

Country Status (1)

Country Link
JP (1) JP2007059889A (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101315282B1 (ko) 2006-04-27 2013-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 사용한 전자기기
US8514165B2 (en) 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2008123119A1 (en) 2007-03-26 2008-10-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device provided with the photoelectric conversion device
KR101401528B1 (ko) * 2007-06-29 2014-06-03 가부시키가이샤 한도오따이 에네루기 켄큐쇼 광전변환장치 및 그 광전변환장치를 구비하는 전자기기
WO2009014155A1 (en) 2007-07-25 2009-01-29 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device having the same
EP2138815B1 (en) * 2008-06-25 2013-11-20 Semiconductor Energy Laboratory Co, Ltd. Photometric device
JP5581106B2 (ja) 2009-04-27 2014-08-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8716646B2 (en) * 2010-10-08 2014-05-06 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and method for operating the same
JP5529203B2 (ja) 2011-09-21 2014-06-25 シャープ株式会社 光センサおよび電子機器
JP2014116729A (ja) * 2012-12-07 2014-06-26 Toyota Central R&D Labs Inc パワーオンリセット回路

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11205247A (ja) * 1998-01-16 1999-07-30 Mitsubishi Electric Corp 光電変換回路
JP4211167B2 (ja) * 1999-12-15 2009-01-21 株式会社デンソー 光センサ
JP4827396B2 (ja) * 2003-10-06 2011-11-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4295075B2 (ja) * 2003-12-05 2009-07-15 日本電信電話株式会社 光・電気変換回路および電界検出光学装置

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