JP2005322899A5 - - Google Patents

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Publication number
JP2005322899A5
JP2005322899A5 JP2005111799A JP2005111799A JP2005322899A5 JP 2005322899 A5 JP2005322899 A5 JP 2005322899A5 JP 2005111799 A JP2005111799 A JP 2005111799A JP 2005111799 A JP2005111799 A JP 2005111799A JP 2005322899 A5 JP2005322899 A5 JP 2005322899A5
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JP
Japan
Prior art keywords
transistor
drain
electrically connected
control gate
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2005111799A
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English (en)
Japanese (ja)
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JP5041672B2 (ja
JP2005322899A (ja
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Publication date
Application filed filed Critical
Priority to JP2005111799A priority Critical patent/JP5041672B2/ja
Priority claimed from JP2005111799A external-priority patent/JP5041672B2/ja
Publication of JP2005322899A publication Critical patent/JP2005322899A/ja
Publication of JP2005322899A5 publication Critical patent/JP2005322899A5/ja
Application granted granted Critical
Publication of JP5041672B2 publication Critical patent/JP5041672B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2005111799A 2004-04-09 2005-04-08 半導体装置 Expired - Fee Related JP5041672B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005111799A JP5041672B2 (ja) 2004-04-09 2005-04-08 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004115467 2004-04-09
JP2004115467 2004-04-09
JP2005111799A JP5041672B2 (ja) 2004-04-09 2005-04-08 半導体装置

Publications (3)

Publication Number Publication Date
JP2005322899A JP2005322899A (ja) 2005-11-17
JP2005322899A5 true JP2005322899A5 (enExample) 2008-05-15
JP5041672B2 JP5041672B2 (ja) 2012-10-03

Family

ID=35469907

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005111799A Expired - Fee Related JP5041672B2 (ja) 2004-04-09 2005-04-08 半導体装置

Country Status (1)

Country Link
JP (1) JP5041672B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101228630B (zh) 2005-05-30 2011-10-05 株式会社半导体能源研究所 半导体器件
TWI411964B (zh) 2006-02-10 2013-10-11 半導體能源研究所股份有限公司 半導體裝置
JP2007241997A (ja) * 2006-02-10 2007-09-20 Semiconductor Energy Lab Co Ltd 半導体装置
EP1909384A3 (en) 2006-10-06 2015-11-25 Semiconductor Energy Laboratory Co., Ltd. Rectifier circuit with variable capacitor, semiconductor device using the circuit, and driving method therefor
IN2012DN05057A (enExample) 2009-12-28 2015-10-09 Semiconductor Energy Lab
WO2011114866A1 (en) 2010-03-17 2011-09-22 Semiconductor Energy Laboratory Co., Ltd. Memory device and semiconductor device
TWI605549B (zh) 2010-08-06 2017-11-11 半導體能源研究所股份有限公司 半導體裝置
KR101928897B1 (ko) 2010-08-27 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억 장치, 반도체 장치
US9024317B2 (en) 2010-12-24 2015-05-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit, method for driving the same, storage device, register circuit, display device, and electronic device
JP5993141B2 (ja) 2010-12-28 2016-09-14 株式会社半導体エネルギー研究所 記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53126567U (enExample) * 1977-03-15 1978-10-07
JPS6187373A (ja) * 1984-10-05 1986-05-02 Nec Corp 絶縁ゲ−ト保護半導体装置
US5272586A (en) * 1991-01-29 1993-12-21 National Semiconductor Corporation Technique for improving ESD immunity
JP3348734B2 (ja) * 1992-07-30 2002-11-20 ソニー株式会社 保護回路
JPH09293835A (ja) * 1996-04-30 1997-11-11 Nkk Corp 入力保護回路
KR100392027B1 (ko) * 1999-01-19 2003-07-22 세이코 엡슨 가부시키가이샤 반도체 집적 회로

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