JP2009065304A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2009065304A5 JP2009065304A5 JP2007229643A JP2007229643A JP2009065304A5 JP 2009065304 A5 JP2009065304 A5 JP 2009065304A5 JP 2007229643 A JP2007229643 A JP 2007229643A JP 2007229643 A JP2007229643 A JP 2007229643A JP 2009065304 A5 JP2009065304 A5 JP 2009065304A5
- Authority
- JP
- Japan
- Prior art keywords
- terminal
- switch
- frequency
- transistor
- potential
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003990 capacitor Substances 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 3
- 239000000758 substrate Substances 0.000 claims 2
- 239000000969 carrier Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007229643A JP2009065304A (ja) | 2007-09-05 | 2007-09-05 | 高周波スイッチ装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007229643A JP2009065304A (ja) | 2007-09-05 | 2007-09-05 | 高周波スイッチ装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2009065304A JP2009065304A (ja) | 2009-03-26 |
| JP2009065304A5 true JP2009065304A5 (enExample) | 2010-04-15 |
Family
ID=40559512
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007229643A Withdrawn JP2009065304A (ja) | 2007-09-05 | 2007-09-05 | 高周波スイッチ装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2009065304A (enExample) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8395435B2 (en) * | 2009-07-30 | 2013-03-12 | Qualcomm, Incorporated | Switches with bias resistors for even voltage distribution |
| JP2011103537A (ja) * | 2009-11-10 | 2011-05-26 | Mitsubishi Electric Corp | 高周波半導体スイッチ |
| US9570974B2 (en) * | 2010-02-12 | 2017-02-14 | Infineon Technologies Ag | High-frequency switching circuit |
| JP5649857B2 (ja) * | 2010-06-21 | 2015-01-07 | ルネサスエレクトロニクス株式会社 | レギュレータ回路 |
| CN101958703A (zh) * | 2010-07-28 | 2011-01-26 | 锐迪科创微电子（北京）有限公司 | Soi cmos射频开关及包含该射频开关的射频发射前端模块 |
| US8847672B2 (en) * | 2013-01-15 | 2014-09-30 | Triquint Semiconductor, Inc. | Switching device with resistive divider |
| CN104682936B (zh) * | 2015-02-04 | 2017-10-03 | 广东工业大学 | 一种具有体区自适应偏置功能的cmos soi射频开关结构 |
| US10211830B2 (en) | 2017-04-28 | 2019-02-19 | Qualcomm Incorporated | Shunt termination path |
| US10910714B2 (en) | 2017-09-11 | 2021-02-02 | Qualcomm Incorporated | Configurable power combiner and splitter |
| CN114157281A (zh) * | 2021-12-13 | 2022-03-08 | 南京中科微电子有限公司 | 一种单刀单掷射频开关电路 |
| CN115333503A (zh) * | 2022-08-18 | 2022-11-11 | 中国电子科技集团公司第二十四研究所 | 数字衰减器 |
-
2007
- 2007-09-05 JP JP2007229643A patent/JP2009065304A/ja not_active Withdrawn