ATE419676T1 - Schaltvorrichtung mit integrierter nanoröhrchen- und feldeffekt-technologie - Google Patents

Schaltvorrichtung mit integrierter nanoröhrchen- und feldeffekt-technologie

Info

Publication number
ATE419676T1
ATE419676T1 AT05856763T AT05856763T ATE419676T1 AT E419676 T1 ATE419676 T1 AT E419676T1 AT 05856763 T AT05856763 T AT 05856763T AT 05856763 T AT05856763 T AT 05856763T AT E419676 T1 ATE419676 T1 AT E419676T1
Authority
AT
Austria
Prior art keywords
switching device
field effect
devices
nanotube
switching
Prior art date
Application number
AT05856763T
Other languages
English (en)
Inventor
Claude Bertin
Original Assignee
Nantero Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nantero Inc filed Critical Nantero Inc
Application granted granted Critical
Publication of ATE419676T1 publication Critical patent/ATE419676T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C23/00—Digital stores characterised by movement of mechanical parts to effect storage, e.g. using balls; Storage elements therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
    • H01H1/00—Contacts
    • H01H1/0094—Switches making use of nanoelectromechanical systems [NEMS]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/54—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements of vacuum tubes
    • H03K17/545—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements of vacuum tubes using microengineered devices, e.g. field emission devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/10—Resistive cells; Technology aspects
    • G11C2213/17—Memory cell being a nanowire transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Theoretical Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Pharmaceuticals Containing Other Organic And Inorganic Compounds (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Logic Circuits (AREA)
AT05856763T 2004-06-18 2005-05-26 Schaltvorrichtung mit integrierter nanoröhrchen- und feldeffekt-technologie ATE419676T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US58101504P 2004-06-18 2004-06-18
US11/033,089 US7288970B2 (en) 2004-06-18 2005-01-10 Integrated nanotube and field effect switching device

Publications (1)

Publication Number Publication Date
ATE419676T1 true ATE419676T1 (de) 2009-01-15

Family

ID=36073317

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05856763T ATE419676T1 (de) 2004-06-18 2005-05-26 Schaltvorrichtung mit integrierter nanoröhrchen- und feldeffekt-technologie

Country Status (6)

Country Link
US (3) US7288970B2 (de)
EP (1) EP1776763B1 (de)
AT (1) ATE419676T1 (de)
CA (1) CA2570486C (de)
DE (1) DE602005012110D1 (de)
WO (1) WO2006078299A2 (de)

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EP1776763A4 (de) 2007-10-17
US7564269B2 (en) 2009-07-21
WO2006078299A3 (en) 2006-10-12
WO2006078299A2 (en) 2006-07-27
US20090295431A1 (en) 2009-12-03
EP1776763B1 (de) 2008-12-31
EP1776763A2 (de) 2007-04-25
CA2570486C (en) 2011-10-18
US20060061389A1 (en) 2006-03-23
DE602005012110D1 (de) 2009-02-12
CA2570486A1 (en) 2006-07-27
US7288970B2 (en) 2007-10-30
US20080218210A1 (en) 2008-09-11
US7859311B2 (en) 2010-12-28

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