JP2009065304A - 高周波スイッチ装置 - Google Patents

高周波スイッチ装置 Download PDF

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Publication number
JP2009065304A
JP2009065304A JP2007229643A JP2007229643A JP2009065304A JP 2009065304 A JP2009065304 A JP 2009065304A JP 2007229643 A JP2007229643 A JP 2007229643A JP 2007229643 A JP2007229643 A JP 2007229643A JP 2009065304 A JP2009065304 A JP 2009065304A
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Japan
Prior art keywords
switch
terminal
switch transistor
potential
drain
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JP2007229643A
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Japanese (ja)
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JP2009065304A5 (enExample
Inventor
Hironao Yanai
寛直 谷内
Yoshiharu Anda
義治 按田
Hiroaki Kono
広明 河野
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Panasonic Corp
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Panasonic Corp
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Priority to JP2007229643A priority Critical patent/JP2009065304A/ja
Publication of JP2009065304A publication Critical patent/JP2009065304A/ja
Publication of JP2009065304A5 publication Critical patent/JP2009065304A5/ja
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JP2007229643A 2007-09-05 2007-09-05 高周波スイッチ装置 Withdrawn JP2009065304A (ja)

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JP2007229643A JP2009065304A (ja) 2007-09-05 2007-09-05 高周波スイッチ装置

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JP2007229643A JP2009065304A (ja) 2007-09-05 2007-09-05 高周波スイッチ装置

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JP2009065304A true JP2009065304A (ja) 2009-03-26
JP2009065304A5 JP2009065304A5 (enExample) 2010-04-15

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101958703A (zh) * 2010-07-28 2011-01-26 锐迪科创微电子（北京）有限公司 Soi cmos射频开关及包含该射频开关的射频发射前端模块
JP2011103537A (ja) * 2009-11-10 2011-05-26 Mitsubishi Electric Corp 高周波半導体スイッチ
JP2011193449A (ja) * 2010-02-12 2011-09-29 Infineon Technologies Ag 高周波スイッチング回路
JP2012003678A (ja) * 2010-06-21 2012-01-05 Renesas Electronics Corp レギュレータ回路
JP2013501429A (ja) * 2009-07-30 2013-01-10 クゥアルコム・インコーポレイテッド 均一電圧分布のためバイアス抵抗器を備えるスイッチ
JP2014138423A (ja) * 2013-01-15 2014-07-28 Triquint Semiconductor Inc 抵抗分圧器を有するスイッチ装置
CN104682936A (zh) * 2015-02-04 2015-06-03 广东工业大学 一种具有体区自适应偏置功能的cmos soi射频开关结构
US10211830B2 (en) 2017-04-28 2019-02-19 Qualcomm Incorporated Shunt termination path
US10693231B2 (en) 2017-09-11 2020-06-23 Qualcomm Incorporated Transmit/receive switching circuit
CN114157281A (zh) * 2021-12-13 2022-03-08 南京中科微电子有限公司 一种单刀单掷射频开关电路
CN115333503A (zh) * 2022-08-18 2022-11-11 中国电子科技集团公司第二十四研究所 数字衰减器

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013501429A (ja) * 2009-07-30 2013-01-10 クゥアルコム・インコーポレイテッド 均一電圧分布のためバイアス抵抗器を備えるスイッチ
JP2011103537A (ja) * 2009-11-10 2011-05-26 Mitsubishi Electric Corp 高周波半導体スイッチ
JP2011193449A (ja) * 2010-02-12 2011-09-29 Infineon Technologies Ag 高周波スイッチング回路
JP2012003678A (ja) * 2010-06-21 2012-01-05 Renesas Electronics Corp レギュレータ回路
CN101958703A (zh) * 2010-07-28 2011-01-26 锐迪科创微电子（北京）有限公司 Soi cmos射频开关及包含该射频开关的射频发射前端模块
JP2014138423A (ja) * 2013-01-15 2014-07-28 Triquint Semiconductor Inc 抵抗分圧器を有するスイッチ装置
CN104682936A (zh) * 2015-02-04 2015-06-03 广东工业大学 一种具有体区自适应偏置功能的cmos soi射频开关结构
US10211830B2 (en) 2017-04-28 2019-02-19 Qualcomm Incorporated Shunt termination path
US10693231B2 (en) 2017-09-11 2020-06-23 Qualcomm Incorporated Transmit/receive switching circuit
US10910714B2 (en) 2017-09-11 2021-02-02 Qualcomm Incorporated Configurable power combiner and splitter
CN114157281A (zh) * 2021-12-13 2022-03-08 南京中科微电子有限公司 一种单刀单掷射频开关电路
CN115333503A (zh) * 2022-08-18 2022-11-11 中国电子科技集团公司第二十四研究所 数字衰减器

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