JP2007005774A5 - - Google Patents

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Publication number
JP2007005774A5
JP2007005774A5 JP2006137823A JP2006137823A JP2007005774A5 JP 2007005774 A5 JP2007005774 A5 JP 2007005774A5 JP 2006137823 A JP2006137823 A JP 2006137823A JP 2006137823 A JP2006137823 A JP 2006137823A JP 2007005774 A5 JP2007005774 A5 JP 2007005774A5
Authority
JP
Japan
Prior art keywords
photoelectric conversion
photodiode
light
detected
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2006137823A
Other languages
English (en)
Japanese (ja)
Other versions
JP4619318B2 (ja
JP2007005774A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2006137823A priority Critical patent/JP4619318B2/ja
Priority claimed from JP2006137823A external-priority patent/JP4619318B2/ja
Publication of JP2007005774A publication Critical patent/JP2007005774A/ja
Publication of JP2007005774A5 publication Critical patent/JP2007005774A5/ja
Application granted granted Critical
Publication of JP4619318B2 publication Critical patent/JP4619318B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2006137823A 2005-05-23 2006-05-17 光電変換装置 Expired - Fee Related JP4619318B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006137823A JP4619318B2 (ja) 2005-05-23 2006-05-17 光電変換装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005148864 2005-05-23
JP2006137823A JP4619318B2 (ja) 2005-05-23 2006-05-17 光電変換装置

Publications (3)

Publication Number Publication Date
JP2007005774A JP2007005774A (ja) 2007-01-11
JP2007005774A5 true JP2007005774A5 (enExample) 2009-06-04
JP4619318B2 JP4619318B2 (ja) 2011-01-26

Family

ID=37691027

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006137823A Expired - Fee Related JP4619318B2 (ja) 2005-05-23 2006-05-17 光電変換装置

Country Status (1)

Country Link
JP (1) JP4619318B2 (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101315282B1 (ko) 2006-04-27 2013-10-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 사용한 전자기기
US8514165B2 (en) 2006-12-28 2013-08-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
WO2008123119A1 (en) 2007-03-26 2008-10-16 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device and electronic device provided with the photoelectric conversion device
EP2075840B1 (en) 2007-12-28 2014-08-27 Semiconductor Energy Laboratory Co., Ltd. Method for dicing a wafer with semiconductor elements formed thereon and corresponding device
JP5388632B2 (ja) * 2008-03-14 2014-01-15 株式会社半導体エネルギー研究所 半導体装置
US8124922B2 (en) * 2008-05-21 2012-02-28 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device including photoelectric conversion element and amplifier circuit having a thin film transistor
US8363365B2 (en) * 2008-06-17 2013-01-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
CN105789324B (zh) 2016-04-15 2019-05-03 京东方科技集团股份有限公司 传感器及其制造方法、电子设备
KR102657111B1 (ko) * 2018-02-02 2024-04-11 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자, 촬상 장치 및 고체 촬상 소자의 제어 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3398195B2 (ja) * 1993-10-19 2003-04-21 ティーディーケイ株式会社 Ｔｆｔフォトトランジスタ、その製造方法及びこれを使用した光センサ回路
JP3267375B2 (ja) * 1993-03-23 2002-03-18 ティーディーケイ株式会社 固体撮像装置
JPH10256841A (ja) * 1997-03-14 1998-09-25 Sony Corp フォトダイオード増幅回路
EP1583148A4 (en) * 2003-01-08 2007-06-27 Semiconductor Energy Lab SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR

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