ATE520155T1 - Tandem photovoltaisches bauelement - Google Patents

Tandem photovoltaisches bauelement

Info

Publication number
ATE520155T1
ATE520155T1 AT06011518T AT06011518T ATE520155T1 AT E520155 T1 ATE520155 T1 AT E520155T1 AT 06011518 T AT06011518 T AT 06011518T AT 06011518 T AT06011518 T AT 06011518T AT E520155 T1 ATE520155 T1 AT E520155T1
Authority
AT
Austria
Prior art keywords
photovoltaic unit
silicon layer
photoelectric conversion
layer
conversion layer
Prior art date
Application number
AT06011518T
Other languages
English (en)
Inventor
Masaki Shima
Original Assignee
Sanyo Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co filed Critical Sanyo Electric Co
Application granted granted Critical
Publication of ATE520155T1 publication Critical patent/ATE520155T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0725—Multiple junction or tandem solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline silicon, uc-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • H01L31/076—Multiple junction or tandem solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
AT06011518T 2005-06-30 2006-06-02 Tandem photovoltaisches bauelement ATE520155T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005190930A JP4688589B2 (ja) 2005-06-30 2005-06-30 積層型光起電力装置

Publications (1)

Publication Number Publication Date
ATE520155T1 true ATE520155T1 (de) 2011-08-15

Family

ID=36747874

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06011518T ATE520155T1 (de) 2005-06-30 2006-06-02 Tandem photovoltaisches bauelement

Country Status (5)

Country Link
US (2) US20070000538A1 (de)
EP (1) EP1739755B1 (de)
JP (1) JP4688589B2 (de)
CN (1) CN100539204C (de)
AT (1) ATE520155T1 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8203071B2 (en) 2007-01-18 2012-06-19 Applied Materials, Inc. Multi-junction solar cells and methods and apparatuses for forming the same
US20090104733A1 (en) * 2007-10-22 2009-04-23 Yong Kee Chae Microcrystalline silicon deposition for thin film solar applications
US7687300B2 (en) * 2007-10-22 2010-03-30 Applied Materials, Inc. Method of dynamic temperature control during microcrystalline SI growth
US20090130827A1 (en) * 2007-11-02 2009-05-21 Soo Young Choi Intrinsic amorphous silicon layer
WO2009059238A1 (en) * 2007-11-02 2009-05-07 Applied Materials, Inc. Plasma treatment between deposition processes
US20110088760A1 (en) * 2009-10-20 2011-04-21 Applied Materials, Inc. Methods of forming an amorphous silicon layer for thin film solar cell application
US20120222730A1 (en) * 2011-03-01 2012-09-06 International Business Machines Corporation Tandem solar cell with improved absorption material
CN102244081B (zh) * 2011-07-05 2012-11-07 南开大学 一种高稳定性非晶硅/微晶硅叠层太阳电池及制备方法
CN108010989B (zh) * 2017-11-10 2019-11-08 深圳先进技术研究院 柔性太阳能电池及其制备方法
CN108010985B (zh) * 2017-11-10 2019-11-08 深圳先进技术研究院 柔性薄膜太阳能电池及其制备方法
CN108417651B (zh) * 2018-03-07 2020-06-09 宁波山迪光能技术有限公司 薄膜太阳能电池、制作方法及隔热太阳能夹胶玻璃
CN109742266B (zh) * 2019-01-11 2021-08-06 京东方科技集团股份有限公司 一种oled微腔结构的制作方法
EP4010519A4 (de) 2019-08-09 2023-09-13 Leading Edge Equipment Technologies, Inc. Herstellung eines bandes oder wafers mit bereichen mit geringer sauerstoffkonzentration

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5288338A (en) * 1990-05-23 1994-02-22 Mitsubishi Denki Kabushiki Kaisha Solar cell and method of producing the solar cell
JP3684041B2 (ja) * 1996-08-28 2005-08-17 キヤノン株式会社 光起電力素子
JP4208281B2 (ja) * 1998-02-26 2009-01-14 キヤノン株式会社 積層型光起電力素子
JP3768672B2 (ja) * 1998-02-26 2006-04-19 キヤノン株式会社 積層型光起電力素子
US6858308B2 (en) * 2001-03-12 2005-02-22 Canon Kabushiki Kaisha Semiconductor element, and method of forming silicon-based film
JP2003046101A (ja) * 2001-07-30 2003-02-14 Kyocera Corp 多層型薄膜光電変換素子およびその製造方法
JP2004111551A (ja) * 2002-09-17 2004-04-08 Mitsubishi Heavy Ind Ltd シリコン光起電力素子及びその製造方法
JP2004165394A (ja) * 2002-11-13 2004-06-10 Canon Inc 積層型光起電力素子
JP4780930B2 (ja) * 2003-05-13 2011-09-28 京セラ株式会社 光電変換装置の製造方法
JP4780931B2 (ja) * 2003-05-13 2011-09-28 京セラ株式会社 光電変換装置および光発電装置
JP4780928B2 (ja) * 2003-05-13 2011-09-28 京セラ株式会社 光電変換装置およびそれを用いた光発電装置
JP2005108901A (ja) * 2003-09-26 2005-04-21 Sanyo Electric Co Ltd 光起電力素子およびその製造方法

Also Published As

Publication number Publication date
US20070000538A1 (en) 2007-01-04
JP2007012833A (ja) 2007-01-18
CN100539204C (zh) 2009-09-09
US20110020974A1 (en) 2011-01-27
EP1739755B1 (de) 2011-08-10
EP1739755A2 (de) 2007-01-03
JP4688589B2 (ja) 2011-05-25
CN1893120A (zh) 2007-01-10
EP1739755A3 (de) 2010-06-16

Similar Documents

Publication Publication Date Title
ATE520155T1 (de) Tandem photovoltaisches bauelement
EP1650812A4 (de) Dünnfilm-solarzelle auf siliciumbasis
Teran et al. AlGaAs photovoltaics for indoor energy harvesting in mm-scale wireless sensor nodes
WO2008156521A3 (en) Textured rear electrode structure for use in photovoltaic device such as cigs/cis solar cell
WO2009126745A3 (en) Method for improving pv aesthetics and efficiency
JP2016054326A (ja) 太陽電池モジュールに使用されるフィルムおよびそのモジュール
ATE553501T1 (de) Photovoltaische zelle
EA201170580A1 (ru) Стеклопакет, включающий по меньшей мере одно противоотражательное покрытие, и использование противоотражательного покрытия в стеклопакете
WO2009067526A3 (en) High-efficiency, high current solar cell and solar module
EP1944811A3 (de) Doppelsolarzellen aus mehrschichtigem Nanodraht-Komposit mit zwei Seiten
WO2009100023A3 (en) A multijunction photovoltaic device
Carlotti et al. A fast and effective procedure for the optical efficiency determination of luminescent solar concentrators
JP2007005774A5 (de)
JP2010103506A5 (ja) 光電変換装置
WO2011036458A3 (en) Improved photocell
WO2004106409A8 (en) Polymer
Lipovšek et al. Optimization of microtextured light-management films for enhanced light trapping in organic solar cells under perpendicular and oblique illumination conditions
DE60231290D1 (de) Photoelektrisches umsetzungselement mit pigmentsensibilisierung
CN103149521A (zh) 一种太阳能电池热阻测试装置及其测试方法
Kojima et al. The evaluation of accelerated test for degradation a stacked a-Si solar cell and EVA films
Iftiquar et al. Effect of light trapping in an amorphous silicon solar cell
JP2005191137A5 (de)
WO2009001646A1 (ja) 積層型光電変換装置
Plesz et al. Influence of the photoactive layer thickness on the device parameters and their temperature dependence in thin crystalline silicon photovoltaic devices
CN107724577A (zh) 一种透光性强的太阳能光伏玻璃幕墙

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties