JP2007042747A - 絶縁膜の成膜方法及び絶縁膜 - Google Patents
絶縁膜の成膜方法及び絶縁膜 Download PDFInfo
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
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Abstract
【解決手段】 プラズマCVD法により絶縁膜を成膜するときの材料ガスとして、一般式SiαOβCγHδ(α=1〜3,β=0〜8,γ=0〜8,δ=4〜24)で示されるSi系化合物と、一般式CεOζHη(ε=1〜8,ζ=0〜10,η=2〜14)で示される炭化水素系化合物と、添加剤とをそれぞれガス化して供給する。
【選択図】 図1
Description
以下に示す成膜条件でSiO2からなる絶縁膜を形成した。得られた絶縁膜の誘電率は4.1であった。
酸素流量 :50cc/min
RFパワー :500W
チャンバー圧力 :5.0torr
基板温度 :370℃
厚さ :200nm
以下に示す成膜条件でSiOCH系の絶縁膜を形成した。得られた絶縁膜の誘電率は2.7、ヤング率は8GPaであった。
RFパワー :400W
チャンバー圧力 :3.0torr
基板温度 :350℃
厚さ :200nm
以下に示す成膜条件で絶縁膜を形成した。得られた絶縁膜の誘電率は2.4、ヤング率は9.5Gpa、成膜速度75nm/minであった。
Si系化合物材料流量 :100cc/min
炭化水素系化合物材料 :プロパン〔CH3CH2CH3〕
炭化水素系化合物材料流量:200cc/min
酸化ガス種類 :H2O
酸化ガス流量 :100cc/min
添加ガス種類 :H2
添加ガス流量 :10cc/min
ヘリウム流量 :500cc/min
チャンバー圧力 :3torr
RFパワー :500W
基板温度 :350℃
以下に示す成膜条件で絶縁膜を形成した。得られた絶縁膜の誘電率は2.4、ヤング率は11Gpa、成膜速度63nm/minであった。
Si系化合物材料流量 :100cc/min
炭化水素系化合物材料 :2−プロパノール〔CH3CH(OH)CH3〕
炭化水素系化合物材料流量:200cc/min
酸化ガス種類 :CO2
酸化ガス流量 :20cc/min
添加ガス種類 :CO
添加ガス流量 :50cc/min
ヘリウム流量 :500cc/min
チャンバー圧力 :5torr
RFパワー :400W
基板温度 :350℃
以下に示す成膜条件で絶縁膜を形成した。得られた絶縁膜の誘電率は2.1、ヤング率は10.5Gpa、成膜速度100nm/minであった。
Si系化合物材料流量 :150cc/min
炭化水素系化合物材料 :アレン〔CH2=C=CH2〕
炭化水素系化合物材料流量:150cc/min
酸化ガス種類 :−
酸化ガス流量 :0cc/min
添加ガス種類 :H2
添加ガス流量 :10cc/min
ヘリウム流量 :300cc/min
チャンバー圧力 :1torr
RFパワー :300W
基板温度 :350℃
以下に示す成膜条件で絶縁膜を形成した。得られた絶縁膜の誘電率は2.2、ヤング率は11.0Gpa、成膜速度125nm/minであった。
Si系化合物材料流量 :200cc/min
炭化水素系化合物材料 :アクリル酸〔CH2=CHCOOH〕
炭化水素系化合物材料流量:200cc/min
酸化ガス種類 :N20
酸化ガス流量 :10cc/min
添加ガス種類 :H2
添加ガス流量 :10cc/min
ヘリウム流量 :500cc/min
チャンバー圧力 :8torr
RFパワー :400W
基板温度 :400℃
以下に示す成膜条件で絶縁膜を形成した。得られた絶縁膜の誘電率は2.3、ヤング率は10.5Gpa、成膜速度150nm/minであった。
Si系化合物材料流量 :100cc/min
炭化水素系化合物材料 :アセトアルデヒド〔CH3CHO〕
炭化水素系化合物材料流量:500cc/min
酸化ガス種類 :H2O
酸化ガス流量 :100cc/min
添加ガス種類 :H2
添加ガス流量 :10cc/min
ヘリウム流量 :800cc/min
チャンバー圧力 :7torr
RFパワー :600W
基板温度 :350℃
以下に示す成膜条件で絶縁膜を形成した。得られた絶縁膜の誘電率は2.2、ヤング率は11.0Gpa、成膜速度150nm/minであった。
Si系化合物材料流量 :100cc/min
炭化水素系化合物材料 :アセトン〔CH3COCH3〕
炭化水素系化合物材料流量:300cc/min
酸化ガス種類 :N2O
酸化ガス流量 :50cc/min
添加ガス種類 :H2
添加ガス流量 :20cc/min
ヘリウム流量 :400cc/min
チャンバー圧力 :7torr
RFパワー :400W
基板温度 :300℃
以下に示す成膜条件で絶縁膜を形成した。得られた絶縁膜の誘電率は2.1、ヤング率は9.5Gpa、成膜速度75nm/minであった。
Si系化合物材料流量 :200cc/min
炭化水素系化合物材料:メチル−2−プロペニルエーテル〔CH3OCH2CHCH2〕
炭化水素系化合物材料流量:300cc/min
酸化ガス種類 :H2O
酸化ガス流量 :100cc/min
添加ガス種類 :H2
添加ガス流量 :5cc/min
ヘリウム流量 :400cc/min
チャンバー圧力 :2torr
RFパワー :400W
基板温度 :350℃
Claims (5)
- プラズマCVD法により絶縁膜を成膜する方法であって、材料ガスとして、一般式SiαOβCγHδ(α=1〜3,β=0〜8,γ=0〜8,δ=4〜24)で示されるSi系化合物と、一般式CεOζHη(ε=1〜8,ζ=0〜10,η=2〜14)で示される炭化水素系化合物と、添加剤とをそれぞれガス化して供給することを特徴とする絶縁膜の成膜方法。
- 前記Si系化合物に酸素が含まれない場合は、材料ガスに酸化剤を加えることを特徴とする請求項1記載の絶縁膜の成膜方法。
- 前記炭化水素系化合物に酸素が含まれない場合は、材料ガスに酸化剤を加えることを特徴とする請求項1記載の絶縁膜の成膜方法。
- 前記Si系化合物及び前記炭化水素系化合物に酸素が含まれない場合は、材料ガスに酸化剤を加えることを特徴とする請求項1記載の絶縁膜の成膜方法。
- 請求項1乃至4のいずれか1項記載の方法により成膜されたことを特徴とする絶縁膜。
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JP2005223053A JP2007042747A (ja) | 2005-08-01 | 2005-08-01 | 絶縁膜の成膜方法及び絶縁膜 |
TW095127696A TW200712245A (en) | 2005-08-01 | 2006-07-28 | Method of producing insulating film, and insulating film thereof |
PCT/JP2006/315001 WO2007015433A1 (ja) | 2005-08-01 | 2006-07-28 | 絶縁膜の成膜方法及び絶縁膜 |
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JP2002252228A (ja) * | 2000-12-19 | 2002-09-06 | Canon Sales Co Inc | 半導体装置及びその製造方法 |
JP2003332328A (ja) * | 2002-03-04 | 2003-11-21 | Asm Japan Kk | 低誘電率及び高機械的強度を有するシリコン系絶縁膜の形成方法 |
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JP2002252228A (ja) * | 2000-12-19 | 2002-09-06 | Canon Sales Co Inc | 半導体装置及びその製造方法 |
JP2003332328A (ja) * | 2002-03-04 | 2003-11-21 | Asm Japan Kk | 低誘電率及び高機械的強度を有するシリコン系絶縁膜の形成方法 |
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