JP2007021713A5 - - Google Patents
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- Publication number
- JP2007021713A5 JP2007021713A5 JP2006166883A JP2006166883A JP2007021713A5 JP 2007021713 A5 JP2007021713 A5 JP 2007021713A5 JP 2006166883 A JP2006166883 A JP 2006166883A JP 2006166883 A JP2006166883 A JP 2006166883A JP 2007021713 A5 JP2007021713 A5 JP 2007021713A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- layer
- antenna
- semiconductor
- metal element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000004065 semiconductor Substances 0.000 claims 23
- 239000010410 layer Substances 0.000 claims 14
- 239000002184 metal Substances 0.000 claims 8
- 229910052751 metal Inorganic materials 0.000 claims 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims 6
- 239000011241 protective layer Substances 0.000 claims 3
- 229910021332 silicide Inorganic materials 0.000 claims 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910021417 amorphous silicon Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006166883A JP2007021713A (ja) | 2005-06-17 | 2006-06-16 | 半導体装置、およびその作製方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005178612 | 2005-06-17 | ||
| JP2006166883A JP2007021713A (ja) | 2005-06-17 | 2006-06-16 | 半導体装置、およびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007021713A JP2007021713A (ja) | 2007-02-01 |
| JP2007021713A5 true JP2007021713A5 (enExample) | 2009-07-30 |
Family
ID=37783118
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006166883A Withdrawn JP2007021713A (ja) | 2005-06-17 | 2006-06-16 | 半導体装置、およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007021713A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4519804B2 (ja) * | 2005-05-27 | 2010-08-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7560789B2 (en) | 2005-05-27 | 2009-07-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| JP4762621B2 (ja) * | 2005-07-08 | 2011-08-31 | 株式会社半導体エネルギー研究所 | 微小電気機械式装置の作製方法 |
| JP5178026B2 (ja) * | 2006-03-10 | 2013-04-10 | 株式会社半導体エネルギー研究所 | 微小構造体、半導体装置、及び微小構造体の作製方法 |
| JP2011005556A (ja) * | 2009-06-23 | 2011-01-13 | Semiconductor Energy Lab Co Ltd | 半導体装置及びその作製方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3638290B2 (ja) * | 1992-10-12 | 2005-04-13 | 株式会社デンソー | 半導体力学センサ |
| JP3603347B2 (ja) * | 1994-10-12 | 2004-12-22 | 株式会社デンソー | 半導体センサの製造方法 |
| US5703728A (en) * | 1994-11-02 | 1997-12-30 | Texas Instruments Incorporated | Support post architecture for micromechanical devices |
| JPH08248441A (ja) * | 1995-03-09 | 1996-09-27 | Toshiba Corp | 液晶表示装置 |
| JPH09246569A (ja) * | 1996-03-04 | 1997-09-19 | Toyota Motor Corp | シリコン構造体の製造方法とシリコン構造体およびシリコン構造体を備えた加速度センサ |
| JPH1022223A (ja) * | 1996-07-03 | 1998-01-23 | Matsushita Electric Ind Co Ltd | 非単結晶薄膜のレーザーアニール方法および薄膜半導体素子の製造方法 |
| JP3592535B2 (ja) * | 1998-07-16 | 2004-11-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP3975574B2 (ja) * | 1998-09-09 | 2007-09-12 | 株式会社デンソー | モノリシックマイクロ波集積回路の製造方法 |
| US6388631B1 (en) * | 2001-03-19 | 2002-05-14 | Hrl Laboratories Llc | Reconfigurable interleaved phased array antenna |
| US6856291B2 (en) * | 2002-08-15 | 2005-02-15 | University Of Pittsburgh- Of The Commonwealth System Of Higher Education | Energy harvesting circuits and associated methods |
| US7373133B2 (en) * | 2002-09-18 | 2008-05-13 | University Of Pittsburgh - Of The Commonwealth System Of Higher Education | Recharging method and apparatus |
| JP2004214726A (ja) * | 2002-12-26 | 2004-07-29 | Sony Corp | 無線通信アンテナ及び無線通信装置 |
| JP2004314251A (ja) * | 2003-04-17 | 2004-11-11 | Fuji Photo Film Co Ltd | 薄膜梁及びその成形方法 |
| JP4772302B2 (ja) * | 2003-09-29 | 2011-09-14 | パナソニック株式会社 | 微小電気機械システムおよびその製造方法 |
| JP2005153067A (ja) * | 2003-11-25 | 2005-06-16 | Kyocera Corp | 電子部品封止用基板およびそれを用いた電子装置の製造方法 |
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2006
- 2006-06-16 JP JP2006166883A patent/JP2007021713A/ja not_active Withdrawn