JP2006528551A - プロセスチャンバのコンポーネントの洗浄 - Google Patents
プロセスチャンバのコンポーネントの洗浄 Download PDFInfo
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- JP2006528551A JP2006528551A JP2006532410A JP2006532410A JP2006528551A JP 2006528551 A JP2006528551 A JP 2006528551A JP 2006532410 A JP2006532410 A JP 2006532410A JP 2006532410 A JP2006532410 A JP 2006532410A JP 2006528551 A JP2006528551 A JP 2006528551A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4407—Cleaning of reactor or reactor parts by using wet or mechanical methods
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0035—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by radiant energy, e.g. UV, laser, light beam or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/04—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by a combination of operations
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B9/00—Cleaning hollow articles by methods or apparatus specially adapted thereto
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
Abstract
【選択図】 図3
Description
Claims (11)
- プロセスチャンバのコンポーネントからプロセス堆積物を洗浄する方法であって、該コンポーネントが複数のガスホールを有し、該方法が、
(a)該コンポーネントの該ガスホールに機械的にピンを押し込み、該ガスホール内の該プロセス堆積物を洗浄するステップと、
(b)該コンポーネントを酸性溶液に晒すステップと、
(c)(1)該コンポーネントをプラズマゾーンに配置する工程、(2)ガスを該プラズマゾーンに導入する工程、(3)該プラズマゾーン内に該ガスのプラズマを形成する工程、(4)該ガスを該プラズマゾーンから排気する工程、によって該コンポーネントをプラズマ安定化するステップと、
を含む、前記方法。 - (b)の前後に(a)を繰り返すステップを含む、請求項1記載の方法。
- 該コンポーネントが電極を覆っているセラミックを備え、(b)が該セラミックをフッ化水素酸と硝酸を含む酸性溶液に晒す工程を含んでいる、請求項1記載の方法。
- 該酸性溶液が、硝酸とフッ化水素酸を質量で約3〜約4の比率で含んでいる、請求項3記載の方法。
- 該静電チャックが該セラミックの下に金属ベースを含み、(b)が本質的に該金属ベースを該酸性溶液に晒さずに該チャックの該セラミックを該酸性溶液に晒す工程を含んでいる、請求項3記載の方法。
- (c)(2)がアルゴン又は窒素を含む非反応性ガスを該プラズマゾーンに導入する工程を含んでいる、請求項1記載の方法。
- (c)の前に、該セラミックの電気抵抗を試験する工程を含んでいる、請求項1記載の方法。
- プロセスチャンバのコンポーネントの複数のガスホールからプロセス堆積物を洗浄するピンニングツールであって、該ピンニングツールが、
(a)ハウジングと、
(b)該ハウジングから突き出ている複数の伸長ピンであって、該伸長ピンが該プロセスチャンバの該コンポーネント内の該ガスホールのレイアウトと一致するように隔置されている、前記伸長ピンと、
を備えている、前記ピンニングツール。 - 該ハウジングに回転して接続されているシャフトであって、該シャフトが縦のシャフト軸を画成し、該ピンが縦のピン軸を画成し、該シャフトが該ピンに機械的に係合して該シャフト軸の周りに該シャフトを回転させると該ピン軸の周りに該ピンの回転が引き起こされる、前記シャフトを更に含む、請求項8記載のピンニングツール。
- 該ピンが環形で配置されている、請求項9記載のピンニングツール。
- 該ピンが研磨コーティングを備えている、請求項9記載のピンニングツール。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/444,284 US7045020B2 (en) | 2003-05-22 | 2003-05-22 | Cleaning a component of a process chamber |
PCT/US2004/011541 WO2004105972A1 (en) | 2003-05-22 | 2004-04-14 | Cleaning a component of a process chamber |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006528551A true JP2006528551A (ja) | 2006-12-21 |
JP4668915B2 JP4668915B2 (ja) | 2011-04-13 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006532410A Expired - Fee Related JP4668915B2 (ja) | 2003-05-22 | 2004-04-14 | プロセスチャンバのコンポーネントの洗浄 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7045020B2 (ja) |
EP (1) | EP1635962B1 (ja) |
JP (1) | JP4668915B2 (ja) |
KR (1) | KR101045442B1 (ja) |
CN (1) | CN1795058B (ja) |
DE (1) | DE602004021254D1 (ja) |
TW (1) | TWI298176B (ja) |
WO (1) | WO2004105972A1 (ja) |
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CN112934832A (zh) * | 2021-04-19 | 2021-06-11 | 北京北方华创微电子装备有限公司 | 陶瓷件清洗方法 |
KR102495074B1 (ko) | 2022-08-05 | 2023-02-06 | 디오셈 주식회사 | 기판 처리 장치에서 인-라인 청소가 가능한 홀 클리너 및 이를 적용한 홀 청소 방법 |
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- 2004-04-14 EP EP04750128A patent/EP1635962B1/en not_active Expired - Lifetime
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Also Published As
Publication number | Publication date |
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EP1635962A1 (en) | 2006-03-22 |
WO2004105972A1 (en) | 2004-12-09 |
CN1795058A (zh) | 2006-06-28 |
JP4668915B2 (ja) | 2011-04-13 |
TWI298176B (en) | 2008-06-21 |
DE602004021254D1 (de) | 2009-07-09 |
CN1795058B (zh) | 2011-09-14 |
US7045020B2 (en) | 2006-05-16 |
KR20060017612A (ko) | 2006-02-24 |
US20040231706A1 (en) | 2004-11-25 |
TW200428479A (en) | 2004-12-16 |
EP1635962B1 (en) | 2009-05-27 |
KR101045442B1 (ko) | 2011-06-30 |
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