JP2006527499A - 高周波電子装置用パッケージ - Google Patents
高周波電子装置用パッケージ Download PDFInfo
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- JP2006527499A JP2006527499A JP2006516661A JP2006516661A JP2006527499A JP 2006527499 A JP2006527499 A JP 2006527499A JP 2006516661 A JP2006516661 A JP 2006516661A JP 2006516661 A JP2006516661 A JP 2006516661A JP 2006527499 A JP2006527499 A JP 2006527499A
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- H01L2924/12—Passive devices, e.g. 2 terminal devices
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- H01L2924/15192—Resurf arrangement of the internal vias
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- H01L2924/1816—Exposing the passive side of the semiconductor or solid-state body
- H01L2924/18162—Exposing the passive side of the semiconductor or solid-state body of a chip with build-up interconnect
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Abstract
Description
Claims (13)
- 第1及び第2の対向する面を有し、前記第1の面から前記第2の面に延在する第1の貫通孔が設けられ、前記第1の面上に第1の電子要素が設けられた半導体材料から成る基板と、
複数接続パッドが設けられた結合面を有し、前記基板の前記第1の貫通孔内にあり、結合面が前記基板の前記第1の面上にある能動装置と、
前記基板の前記第1の面上に設けられ、前記第1の貫通孔全体に延在し、前記能動装置を前記電子要素に相互接続し、前記接続パッドに対応する接続面を備える薄膜相互接続構造と、
前記基板の前記第2の面上に設けられ、前記第1の貫通孔と、少なくとも前記基板の一部とにわたって延在するヒート・シンクと、
外部システムに接続するためのボンディング・パッドと
を備える電子装置であって、
前記能動装置が第1の周波数の複数信号を処理するように作られ、前記第1の電子要素が、前記第1の周波数の複数信号を第2の低周波数及び又はその逆に変換する変成器の一部であり、それにより動作の際、前記ボンディング・パッドが前記第2の周波数で複数信号を伝送し、前記ヒート・シンクが接地面として動作することを特徴とする電子装置。 - 複数信号を前記第1の周波数で外部システムへ及び又は前記外部システムから伝送するために無線結合手段が存在することを特徴とする請求項1に記載の電子装置。
- 前記変成器が複数マルチプレクサ及び複数デマルチプレクサを含み、前記第2の周波数の信号が低周波数信号である請求項2に記載の電子装置。
- 前記無線結合手段がダイポール・アンテナを含み、複数信号がシングル・エンド・フォーマットに変換されない複数差分信号として前記ダイポール・アンテナから1つ又は複数の能動装置へ伝送される請求項2に記載の電子装置。
- 少なくとも部分的に第2の能動装置として組み入れられたインピーダンス整合回路をさらに備え、前記第2の能動装置が前記基板内の第2の貫通孔内に存在する請求項2に記載の電子装置。
- 前記第2の能動装置が微小電子機器システム(MEMS)要素を備える請求項5に記載の電子装置。
- 半導体材料から成る前記基板が高抵抗シリコン基板である請求項1に記載の電子装置。
- 垂直相互接続部が前記相互接続構造から前記基板を介して前記接地面に延在する請求項1に記載の電子装置。
- 少なくとも2つの周波数帯域において信号伝送及び信号増幅のための手段を備える請求項1に記載の装置。
- 前記無線結合手段が光信号を電子信号に変換することが可能な光電子半導体要素を備える請求項2に記載の装置。
- アンテナをさらに備える請求項10に記載の装置。
- 請求項1乃至11いずれかに記載の前記装置を備えるオーディオ及びビデオ伝送システム。
- 少なくとも2GHzの周波数で信号を伝送し、且つ、増幅するための請求項1乃至11いずれかに記載の前記電子装置の使用。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03101729A EP1487019A1 (en) | 2003-06-12 | 2003-06-12 | Electronic device and method of manufacturing thereof |
PCT/IB2004/050863 WO2004112134A1 (en) | 2003-06-12 | 2004-06-08 | Package for a high-frequency electronic device |
Publications (1)
Publication Number | Publication Date |
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JP2006527499A true JP2006527499A (ja) | 2006-11-30 |
Family
ID=33185964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2006516661A Pending JP2006527499A (ja) | 2003-06-12 | 2004-06-08 | 高周波電子装置用パッケージ |
Country Status (5)
Country | Link |
---|---|
US (1) | US7098530B2 (ja) |
EP (2) | EP1487019A1 (ja) |
JP (1) | JP2006527499A (ja) |
CN (1) | CN100456468C (ja) |
WO (1) | WO2004112134A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006270037A (ja) * | 2005-02-28 | 2006-10-05 | Sony Corp | ハイブリットモジュール及びその製造方法並びにハイブリット回路装置 |
JP2010529664A (ja) * | 2007-06-07 | 2010-08-26 | コミサリア ア レネルジ アトミク | 半導体ダイ内に集積化したマルチコンポーネントデバイス |
JP2012517758A (ja) * | 2009-02-12 | 2012-08-02 | トムソン ライセンシング | HR−Siシリコン技術におけるフィルタリング回路 |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003059792A (ja) * | 2001-08-21 | 2003-02-28 | Toshiba Corp | 仕様情報交換サーバ、仕様情報交換方法、仕様情報交換プログラム、特殊仕様製品の購入方法及び特殊仕様製品の販売方法 |
US6960490B2 (en) * | 2002-03-14 | 2005-11-01 | Epitactix Pty Ltd. | Method and resulting structure for manufacturing semiconductor substrates |
US7514759B1 (en) * | 2004-04-19 | 2009-04-07 | Hrl Laboratories, Llc | Piezoelectric MEMS integration with GaN technology |
US7448012B1 (en) | 2004-04-21 | 2008-11-04 | Qi-De Qian | Methods and system for improving integrated circuit layout |
JP4810957B2 (ja) * | 2005-02-28 | 2011-11-09 | ソニー株式会社 | ハイブリットモジュール及びその製造方法 |
US7586192B2 (en) * | 2005-03-21 | 2009-09-08 | Intel Corporation | Routing configuration for high frequency signals in an integrated circuit package |
US7736945B2 (en) * | 2005-06-09 | 2010-06-15 | Philips Lumileds Lighting Company, Llc | LED assembly having maximum metal support for laser lift-off of growth substrate |
US7754507B2 (en) * | 2005-06-09 | 2010-07-13 | Philips Lumileds Lighting Company, Llc | Method of removing the growth substrate of a semiconductor light emitting device |
TW200737506A (en) * | 2006-03-07 | 2007-10-01 | Sanyo Electric Co | Semiconductor device and manufacturing method of the same |
TWI367557B (en) * | 2006-08-11 | 2012-07-01 | Sanyo Electric Co | Semiconductor device and manufaturing method thereof |
JP5010247B2 (ja) * | 2006-11-20 | 2012-08-29 | オンセミコンダクター・トレーディング・リミテッド | 半導体装置及びその製造方法 |
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US8102045B2 (en) * | 2007-08-08 | 2012-01-24 | Infineon Technologies Ag | Integrated circuit with galvanically bonded heat sink |
US7651889B2 (en) | 2007-09-13 | 2010-01-26 | Freescale Semiconductor, Inc. | Electromagnetic shield formation for integrated circuit die package |
US8581113B2 (en) | 2007-12-19 | 2013-11-12 | Bridgewave Communications, Inc. | Low cost high frequency device package and methods |
WO2009108136A1 (en) * | 2008-02-27 | 2009-09-03 | Agency For Science, Technology And Research | Substrate cavity semiconductor package |
US7928525B2 (en) * | 2008-04-25 | 2011-04-19 | Qimonda Ag | Integrated circuit with wireless connection |
SG177945A1 (en) | 2008-07-18 | 2012-02-28 | United Test & Assembly Ct Lt | Packaging structural member |
US7949024B2 (en) * | 2009-02-17 | 2011-05-24 | Trilumina Corporation | Multibeam arrays of optoelectronic devices for high frequency operation |
US7977785B2 (en) * | 2009-03-05 | 2011-07-12 | Freescale Semiconductor, Inc. | Electronic device including dies, a dielectric layer, and a encapsulating layer |
CN102472648B (zh) * | 2009-07-22 | 2014-04-16 | 皇家飞利浦电子股份有限公司 | 具有低响应时间和高灵敏度的热流量传感器集成电路 |
US8350381B2 (en) * | 2010-04-01 | 2013-01-08 | Infineon Technologies Ag | Device and method for manufacturing a device |
US10115654B2 (en) * | 2010-06-18 | 2018-10-30 | Palo Alto Research Center Incorporated | Buried thermally conductive layers for heat extraction and shielding |
JP6176869B2 (ja) | 2013-03-08 | 2017-08-09 | ノースロップ グルマン システムズ コーポレーションNorthrop Grumman Systems Corporation | 導波路および半導体パッケージング |
KR101940981B1 (ko) | 2014-05-05 | 2019-01-23 | 3디 글래스 솔루션즈 인코포레이티드 | 2d 및 3d 인덕터 안테나 및 변압기 제작 광 활성 기판 |
US20160118353A1 (en) * | 2014-10-22 | 2016-04-28 | Infineon Techologies Ag | Systems and Methods Using an RF Circuit on Isolating Material |
US20160172274A1 (en) * | 2014-12-16 | 2016-06-16 | Qualcomm Incorporated | System, apparatus, and method for semiconductor package grounds |
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US10854946B2 (en) | 2017-12-15 | 2020-12-01 | 3D Glass Solutions, Inc. | Coupled transmission line resonate RF filter |
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US11527482B2 (en) * | 2017-12-22 | 2022-12-13 | Hrl Laboratories, Llc | Hybrid integrated circuit architecture |
CA3082624C (en) | 2018-01-04 | 2022-12-06 | 3D Glass Solutions, Inc. | Impedance matching conductive structure for high efficiency rf circuits |
US10957537B2 (en) * | 2018-11-12 | 2021-03-23 | Hrl Laboratories, Llc | Methods to design and uniformly co-fabricate small vias and large cavities through a substrate |
KR102393450B1 (ko) | 2018-12-28 | 2022-05-04 | 3디 글래스 솔루션즈 인코포레이티드 | 광활성 유리 기판들에서 rf, 마이크로파, 및 mm 파 시스템들을 위한 이종 통합 |
JP7140435B2 (ja) | 2019-04-05 | 2022-09-21 | スリーディー グラス ソリューションズ,インク | ガラスベースの空基板集積導波路デバイス |
WO2020214788A1 (en) | 2019-04-18 | 2020-10-22 | 3D Glass Solutions, Inc. | High efficiency die dicing and release |
CA3177603C (en) | 2020-04-17 | 2024-01-09 | 3D Glass Solutions, Inc. | Broadband induction |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5351001A (en) * | 1990-04-05 | 1994-09-27 | General Electric Company | Microwave component test method and apparatus |
US5418687A (en) * | 1994-02-01 | 1995-05-23 | Hewlett-Packard Company | Wafer scale multi-chip module |
JPH0844831A (ja) * | 1994-07-27 | 1996-02-16 | Nippon Telegr & Teleph Corp <Ntt> | ハイブリッドカードとそれを使用した無線通信システム |
JPH11187143A (ja) * | 1997-12-25 | 1999-07-09 | Oki Electric Ind Co Ltd | パーソナル通信端末におけるデータ転送方法及びその装置 |
JP2000134592A (ja) * | 1998-10-27 | 2000-05-12 | Sharp Corp | 携帯型テレビ電話装置 |
JP2001244638A (ja) * | 1999-12-20 | 2001-09-07 | Matsushita Electric Ind Co Ltd | 回路部品内蔵モジュール及びその製造方法 |
JP2002282218A (ja) * | 2001-03-28 | 2002-10-02 | Matsushita Electric Ind Co Ltd | 携帯型検査端末、検査システム、通信端末及び検査方法 |
JP2003100989A (ja) * | 2001-09-27 | 2003-04-04 | Hitachi Ltd | 高周波モジュール |
JP2003133989A (ja) * | 2001-08-10 | 2003-05-09 | Hitachi Metals Ltd | マルチバンドアンテナスイッチ回路及びマルチバンドアンテナスイッチ積層モジュール複合部品並びにこれを用いた通信装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL8202470A (nl) * | 1982-06-18 | 1984-01-16 | Philips Nv | Hoogfrequentschakelinrichting en halfgeleiderinrichting voor toepassing in een dergelijke inrichting. |
US5138436A (en) * | 1990-11-16 | 1992-08-11 | Ball Corporation | Interconnect package having means for waveguide transmission of rf signals |
JP3267409B2 (ja) * | 1992-11-24 | 2002-03-18 | 株式会社日立製作所 | 半導体集積回路装置 |
US5422514A (en) * | 1993-05-11 | 1995-06-06 | Micromodule Systems, Inc. | Packaging and interconnect system for integrated circuits |
DE69533352T2 (de) * | 1994-05-24 | 2005-07-28 | Koninklijke Philips Electronics N.V. | Optoelektronische halbleitervorrichtung mit laser und photodiode |
US6118357A (en) * | 1999-02-15 | 2000-09-12 | Trw Inc. | Wireless MMIC chip packaging for microwave and millimeterwave frequencies |
US6538210B2 (en) * | 1999-12-20 | 2003-03-25 | Matsushita Electric Industrial Co., Ltd. | Circuit component built-in module, radio device having the same, and method for producing the same |
EP1259103B1 (en) * | 2000-02-25 | 2007-05-30 | Ibiden Co., Ltd. | Multilayer printed wiring board and method for producing multilayer printed wiring board |
EP1298728A1 (en) * | 2001-09-27 | 2003-04-02 | Agilent Technologies, Inc. (a Delaware corporation) | IC package with an electromagnetic interference screening device |
-
2003
- 2003-06-12 EP EP03101729A patent/EP1487019A1/en not_active Withdrawn
-
2004
- 2004-06-08 WO PCT/IB2004/050863 patent/WO2004112134A1/en not_active Application Discontinuation
- 2004-06-08 CN CNB2004800160880A patent/CN100456468C/zh not_active Expired - Fee Related
- 2004-06-08 JP JP2006516661A patent/JP2006527499A/ja active Pending
- 2004-06-08 US US10/560,004 patent/US7098530B2/en active Active
- 2004-06-08 EP EP04736338A patent/EP1636843A1/en not_active Withdrawn
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5351001A (en) * | 1990-04-05 | 1994-09-27 | General Electric Company | Microwave component test method and apparatus |
US5418687A (en) * | 1994-02-01 | 1995-05-23 | Hewlett-Packard Company | Wafer scale multi-chip module |
US5506383A (en) * | 1994-02-01 | 1996-04-09 | Hewlett-Packard Company | Wafer scale multi-chip module |
JPH0844831A (ja) * | 1994-07-27 | 1996-02-16 | Nippon Telegr & Teleph Corp <Ntt> | ハイブリッドカードとそれを使用した無線通信システム |
JPH11187143A (ja) * | 1997-12-25 | 1999-07-09 | Oki Electric Ind Co Ltd | パーソナル通信端末におけるデータ転送方法及びその装置 |
JP2000134592A (ja) * | 1998-10-27 | 2000-05-12 | Sharp Corp | 携帯型テレビ電話装置 |
JP2001244638A (ja) * | 1999-12-20 | 2001-09-07 | Matsushita Electric Ind Co Ltd | 回路部品内蔵モジュール及びその製造方法 |
JP2002282218A (ja) * | 2001-03-28 | 2002-10-02 | Matsushita Electric Ind Co Ltd | 携帯型検査端末、検査システム、通信端末及び検査方法 |
JP2003133989A (ja) * | 2001-08-10 | 2003-05-09 | Hitachi Metals Ltd | マルチバンドアンテナスイッチ回路及びマルチバンドアンテナスイッチ積層モジュール複合部品並びにこれを用いた通信装置 |
JP2003100989A (ja) * | 2001-09-27 | 2003-04-04 | Hitachi Ltd | 高周波モジュール |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006270037A (ja) * | 2005-02-28 | 2006-10-05 | Sony Corp | ハイブリットモジュール及びその製造方法並びにハイブリット回路装置 |
JP2010529664A (ja) * | 2007-06-07 | 2010-08-26 | コミサリア ア レネルジ アトミク | 半導体ダイ内に集積化したマルチコンポーネントデバイス |
US8409971B2 (en) | 2007-06-07 | 2013-04-02 | Commissariat A L'energie Atomique | Integrated multicomponent device in a semiconducting die |
JP2012517758A (ja) * | 2009-02-12 | 2012-08-02 | トムソン ライセンシング | HR−Siシリコン技術におけるフィルタリング回路 |
Also Published As
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WO2004112134A1 (en) | 2004-12-23 |
US20060131736A1 (en) | 2006-06-22 |
US7098530B2 (en) | 2006-08-29 |
EP1636843A1 (en) | 2006-03-22 |
EP1487019A1 (en) | 2004-12-15 |
CN100456468C (zh) | 2009-01-28 |
CN1802746A (zh) | 2006-07-12 |
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