JP2006523954A - 超小型電子相互接続構造の多層キャップ障壁 - Google Patents
超小型電子相互接続構造の多層キャップ障壁 Download PDFInfo
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- JP2006523954A JP2006523954A JP2006509706A JP2006509706A JP2006523954A JP 2006523954 A JP2006523954 A JP 2006523954A JP 2006509706 A JP2006509706 A JP 2006509706A JP 2006509706 A JP2006509706 A JP 2006509706A JP 2006523954 A JP2006523954 A JP 2006523954A
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- dielectric
- sublayer
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- composition
- barrier layer
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Images
Classifications
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】本明細書には、少なくとも1つの低kサブレイヤと少なくとも1つの空気障壁サブレイヤとを有する低k多層誘電拡散障壁層を有する構造が記載される。多層誘電拡散障壁層は金属の拡散に対する障壁であり、かつ空気の透過に対する障壁である。この構造の生成に関連した方法および組成物も記載される。これらの低k多層誘電拡散障壁層を利用する利点は、導電性金属フィーチャ間のキャパシタンスの低下によるチップ性能の増大、および多層誘電拡散障壁層が空気を通さず金属拡散を防ぐことによる信頼性の増大である。
Description
Claims (43)
- 少なくとも1つの導電性金属フィーチャと、
前記導電性金属フィーチャを取り囲む層間誘電層と、
金属拡散に対する障壁である多層誘電拡散障壁層であって、少なくとも2つのサブレイヤからなり、少なくとも1つのサブレイヤが空気の透過を妨げる空気障壁サブレイヤであり、少なくとも1つの他のサブレイヤが低kサブレイヤである多層誘電拡散障壁層と、
ライン・レベル誘電体とバイア・レベル誘電体とからなる層間誘電体と
を含む相互接続構造。 - 前記多層誘電拡散障壁層が4.0未満の合成誘電率を有する、請求項1に記載の構造。
- 前記空気障壁サブレイヤが、窒化シリコン、炭窒化シリコン、酸窒化シリコン、二酸化シリコン、炭化シリコンまたはフッ化ガラスからなる誘電体である、請求項1に記載の構造。
- 前記空気障壁サブレイヤが組成SivNwCxOyHzを有する誘電体であり、0.1≦v≦0.8、0≦w≦0.8、0.05≦x≦0.8、0≦y≦0.3、0.05≦z≦0.8、v+w+x+y+z=1である、請求項1に記載の構造。
- 前記低kサブレイヤがSivNwCxOyHzからなる誘電体であり、0.1≦v≦0.8、0≦w≦0.8、0.05≦x≦0.8、0≦y≦0.3、0.05≦z≦0.8、v+w+x+y+z=1である、請求項1に記載の構造。
- 前記低kサブレイヤがポロシティを含む、請求項1に記載の構造。
- 前記ポロシティが独立気泡の形態を有する、請求項6に記載の構造。
- 前記多層誘電拡散障壁層が、前記空気障壁サブレイヤの上に前記低kサブレイヤがある2重層である、請求項1に記載の構造。
- 前記多層誘電拡散障壁層が、前記低kサブレイヤの上に前記空気障壁サブレイヤがある2重層である、請求項1に記載の構造。
- 前記多層誘電拡散障壁層が、2つの低kサブレイヤ間に前記空気障壁サブレイヤが配置された3重層である、請求項1に記載の構造。
- 少なくとも1つの低誘電率材料をさらに含み、前記低誘電率材料が、ポリシロキサン、ポリシルセスキオキサン、ポリアリーレン、ポリ(アリーレンエーテル)、および組成SivNwCxOyHzを有する膜を生み出す蒸着法によって生み出された誘電体のうちの少なくとも1つからなり、0.05≦v≦0.8、0≦w≦0.9、0.05≦x≦0.8、0≦y≦0.8、0.05≦z≦0.8、v+w+x+y+z=1である、請求項1に記載の構造。
- 前記低誘電率材料が多孔質材料である、請求項11に記載の構造。
- 前記バイア・レベル誘電体が、少なくとも1つの低誘電率材料および前記多層誘電拡散障壁層からなる、請求項1に記載の構造。
- 誘電前記バイア・レベルが前記多層誘電拡散障壁層だけからなる、請求項1に記載の構造。
- 前記層間誘電体が、1つの組成のライン・レベル誘電体と2つの異なる組成を有するバイア・レベル誘電体とからなり、導電性金属フィーチャの直下の前記バイア・レベル誘電体が1つの組成の誘電体であり、導電性金属フィーチャの直下以外の前記バイア・レベル誘電体が、前記ライン・レベル誘電体と同一の組成を有する、請求項1に記載の構造。
- 前記導電性金属フィーチャが、この相互接続構造のエレクトロマイグレーション特性を低減させる金属を上面に含む、請求項1に記載の構造。
- 前記導電性金属フィーチャが、酸化する前記金属線の傾向を低減させる部分を上面に含み、前記部分が、ベンゾトリアゾール、アミン、アミド、イミド、チオエステル、チオエーテル、尿素、ウレタン、ニトリル、イソシアナート、チオール、スルホン、ホスフィン、ホスフィンオキシド、ホスホンイミド、ピリジン、イミダゾール、イミド、オキサゾール、ベンゾオキサゾール、チアゾール、ピラゾール、トリアゾール、チオフェン、オキサジアゾール、チアジン、チアゾール、キノキサリン、ベンゾイミダゾール、オキシインドールおよびインドリンのうちの1つである、請求項1に記載の構造。
- 前記ライン・レベル誘電体が、前記ライン・レベル誘電体とは組成が異なるハードマスク誘電体を含む、請求項1に記載の構造。
- 前記ハードマスク誘電体が、ポリシロキサン、ポリシルセスキオキサンまたは組成SivNwCxOyHzを有する任意のCVD付着誘電体を含み、0.05≦v≦0.8、0≦w≦0.9、0.05≦x≦0.8、0≦y≦0.8、0.05≦z≦0.8、v+w+x+y+z=1である、請求項18に記載の構造。
- 前記ライン・レベル誘電体とバイア・レベル誘電体とが誘電エッチング・ストップ層によって分離されている、請求項1に記載の構造。
- 前記誘電エッチング・ストップ層が、ポリシロキサン、ポリシルセスキオキサンまたはSivNwCxOyHzからなる組成を有する任意のCVD付着誘電体を含み、0.05≦v≦0.8、0≦w≦0.9、0.05≦x≦0.8、0≦y≦0.8、0.05≦z≦0.8、v+w+x+y+z=1である、請求項20に記載の構造。
- 前記多層誘電拡散障壁層とその上の誘電層との間、または前記多層誘電拡散障壁層のその下の誘電層との間、あるいは前記多層誘電拡散障壁層とその上下の誘電層との間に少なくとも1つの接着促進剤が存在する、請求項1に記載の構造。
- 前記多層誘電拡散障壁層の前記サブレイヤ間に少なくとも1つの接着促進剤が存在する、請求項1に記載の構造。
- 多層誘電拡散障壁層を生み出す方法であって、
溶媒ベースの方法によって重合体プレセラミック前駆物質のコーティングを適用すること、
前記重合体プレセラミック前駆物質を前記低kサブレイヤに転化させること、および
空気障壁サブレイヤのコーティングを適用すること
を含む方法。 - 前記重合体プレセラミック前駆物質を前記低kサブレイヤに転化させることが、熱硬化、電子照射、イオン照射、紫外光もしくは可視光またはその両方を用いた照射、あるいはこれらの任意の組合せを含む、請求項24に記載の方法。
- 前記重合体プレセラミック前駆物質の前記適用の前に接着促進剤が適用される、請求項24に記載の方法。
- 前記接着促進剤が、前記重合体プレセラミック前駆物質を含む溶液に共溶解され、適用の間、または前記重合体プレセラミック前駆物質の前記低kサブレイヤへの前記転化の間に、前記接着促進剤が膜界面に偏析する、請求項26に記載の方法。
- 前記重合体プレセラミック前駆物質の前記適用の後、前記重合体プレセラミック前駆物質の前記低kサブレイヤへの前記転化の前に、接着促進剤が適用される、請求項24に記載の方法。
- 前記重合体プレセラミック前駆物質の前記低kサブレイヤへの前記転化の後に接着促進剤が適用される、請求項24に記載の方法。
- ポロシティを生み出す犠牲部分が、前記重合体プレセラミック前駆物質を含む溶液に共溶解される、請求項24に記載の方法。
- 前記空気障壁サブレイヤの前記適用が、化学蒸着プロセス、プラズマ化学蒸着または物理蒸着による、請求項24に記載の方法。
- 前記空気障壁サブレイヤが、熱硬化、電子照射、イオン照射、紫外光もしくは可視光またはその両方を用いた照射、あるいはこれらの任意の組合せによってアニールされる、請求項24に記載の方法。
- 他の層への接着を強化するために前記空気障壁サブレイヤに接着促進剤が適用される、請求項24に記載の方法。
- 他の層への接着を強化するために、前記空気障壁サブレイヤを反応性プラズマに暴露して、前記空気障壁サブレイヤの表面を改変させる、請求項24に記載の方法。
- 他の層への接着を強化するために、前記低kサブレイヤを反応性プラズマに暴露して、前記低kサブレイヤの表面を改変させる、請求項24に記載の方法。
- 多層誘電拡散障壁層を生み出すための組成物であって、
溶媒ベースの方法によって低kサブレイヤを適用するための溶媒と、
低kサブレイヤに転化される重合体プレセラミック前駆物質と、
空気障壁サブレイヤと
を含む組成物。 - 前記重合体プレセラミック前駆物質が、ポリシラザン、ポリカルボシラン、ポリシラシラザン、ポリシラン、ポリシラカルボシラン、ポリシロキサザン、ポリカルボシラザン、ポリシリルカルボジイミド、ポリシルセスキアザンまたはポリシラカルボシラザンを含む、請求項36に記載の組成物。
- 前記重合体プレセラミック前駆物質が、主鎖に結合されたペンダント官能基を含み、前記ペンダント官能基が、アミン、アミド、イミド、チオエステル、チオエーテル、尿素、ウレタン、ニトリル、イソシアナート、チオール、スルホン、ホスフィン、ホスフィンオキシド、ホスホンイミド、ベンゾトリアゾール、ピリジン、イミダゾール、イミド、オキサゾール、ベンゾオキサゾール、チアゾール、ピラゾール、トリアゾール、チオフェン、オキサジアゾール、チアジン、チアゾール、キノキサリン、ベンゾイミダゾール、オキシインドール、インドリン、水素化物、ビニル、アリル、アルコキシ、シリルおよびアルキルからなるグループから選択される、請求項36に記載の組成物。
- 前記重合体プレセラミック前駆物質が組成SivNwCxOyHzを有し、0.1≦v≦0.8、0≦w≦0.8、0.05≦x≦0.8、0≦y≦0.3、0.05≦z≦0.8、v+w+x+y+z=1である、請求項36に記載の組成物。
- 均一性の高い膜を生み出すために、前記重合体プレセラミック前駆物質を含む溶液にアンチストライエーション剤が共溶解された、請求項36に記載の組成物。
- 前記重合体プレセラミック前駆物質を含む溶液に接着促進剤が共溶解された、請求項36に記載の組成物。
- 前記重合体プレセラミック前駆物質を含む溶液に、ポロシティを生み出す犠牲部分が共溶解された、請求項36に記載の組成物。
- 前記低kサブレイヤが組成SivNwCxOyHzを有し、0.1≦v≦0.8、0≦w≦0.8、0.05≦x≦0.8、0≦y≦0.3、0.05≦z≦0.8、v+w+x+y+z=1である、請求項36に記載の組成物。
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US10/648,884 | 2003-08-27 | ||
PCT/US2004/010443 WO2004095510A2 (en) | 2003-04-17 | 2004-04-05 | Multilayered cap barrier in microelectronic, interconnect structures |
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EP (1) | EP1620877A4 (ja) |
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US7081673B2 (en) | 2006-07-25 |
WO2004095510A2 (en) | 2004-11-04 |
US20060197224A1 (en) | 2006-09-07 |
US7470597B2 (en) | 2008-12-30 |
KR100791438B1 (ko) | 2008-01-04 |
US20080254614A1 (en) | 2008-10-16 |
TW200503123A (en) | 2005-01-16 |
WO2004095510A3 (en) | 2006-02-02 |
EP1620877A4 (en) | 2009-12-09 |
US20110226981A1 (en) | 2011-09-22 |
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US20040207084A1 (en) | 2004-10-21 |
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