CN100505223C - 微电子互连结构体中的多层覆盖阻隔层 - Google Patents
微电子互连结构体中的多层覆盖阻隔层 Download PDFInfo
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- CN100505223C CN100505223C CN 200480013526 CN200480013526A CN100505223C CN 100505223 C CN100505223 C CN 100505223C CN 200480013526 CN200480013526 CN 200480013526 CN 200480013526 A CN200480013526 A CN 200480013526A CN 100505223 C CN100505223 C CN 100505223C
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- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
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- QQZOPKMRPOGIEB-UHFFFAOYSA-N 2-Oxohexane Chemical compound CCCCC(C)=O QQZOPKMRPOGIEB-UHFFFAOYSA-N 0.000 description 1
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- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- 239000010931 gold Substances 0.000 description 1
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- 239000001257 hydrogen Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- UZKWTJUDCOPSNM-UHFFFAOYSA-N methoxybenzene Substances CCCCOC=C UZKWTJUDCOPSNM-UHFFFAOYSA-N 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920000636 poly(norbornene) polymer Polymers 0.000 description 1
- 229920000058 polyacrylate Polymers 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000151 polyglycol Polymers 0.000 description 1
- 239000010695 polyglycol Substances 0.000 description 1
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- 229920002223 polystyrene Polymers 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 229920005604 random copolymer Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (43)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46375803P | 2003-04-17 | 2003-04-17 | |
US60/463,758 | 2003-04-17 | ||
US10/648,884 | 2003-08-27 |
Publications (2)
Publication Number | Publication Date |
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CN1833316A CN1833316A (zh) | 2006-09-13 |
CN100505223C true CN100505223C (zh) | 2009-06-24 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 200480013526 Expired - Fee Related CN100505223C (zh) | 2003-04-17 | 2004-04-05 | 微电子互连结构体中的多层覆盖阻隔层 |
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CN (1) | CN100505223C (zh) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8362596B2 (en) * | 2009-07-14 | 2013-01-29 | International Business Machines Corporation | Engineered interconnect dielectric caps having compressive stress and interconnect structures containing same |
CN102034748B (zh) * | 2009-09-28 | 2012-10-31 | 中芯国际集成电路制造(上海)有限公司 | 集成电路器件及其制备方法 |
US20140024213A1 (en) * | 2012-07-18 | 2014-01-23 | Globalfoundries Inc. | Processes for forming integrated circuits with post-patterning treament |
US8754508B2 (en) * | 2012-08-29 | 2014-06-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure to increase resistance to electromigration |
CN103839873A (zh) * | 2012-11-21 | 2014-06-04 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件的制造方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6265779B1 (en) * | 1998-08-11 | 2001-07-24 | International Business Machines Corporation | Method and material for integration of fuorine-containing low-k dielectrics |
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2004
- 2004-04-05 CN CN 200480013526 patent/CN100505223C/zh not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6265779B1 (en) * | 1998-08-11 | 2001-07-24 | International Business Machines Corporation | Method and material for integration of fuorine-containing low-k dielectrics |
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Publication number | Publication date |
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CN1833316A (zh) | 2006-09-13 |
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