JP2006522352A - 基板上への層の堆積法 - Google Patents
基板上への層の堆積法 Download PDFInfo
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- JP2006522352A JP2006522352A JP2006502241A JP2006502241A JP2006522352A JP 2006522352 A JP2006522352 A JP 2006522352A JP 2006502241 A JP2006502241 A JP 2006502241A JP 2006502241 A JP2006502241 A JP 2006502241A JP 2006522352 A JP2006522352 A JP 2006522352A
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- 238000000034 method Methods 0.000 title claims abstract description 64
- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 238000000151 deposition Methods 0.000 title claims abstract description 48
- 239000000463 material Substances 0.000 claims abstract description 60
- 239000002243 precursor Substances 0.000 claims abstract description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 32
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 27
- 239000010703 silicon Substances 0.000 claims abstract description 27
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 18
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 16
- 239000011148 porous material Substances 0.000 claims abstract description 15
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 12
- 230000001419 dependent effect Effects 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 4
- 238000004377 microelectronic Methods 0.000 claims abstract description 3
- 230000008021 deposition Effects 0.000 claims description 35
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 8
- 239000013078 crystal Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- 239000003125 aqueous solvent Substances 0.000 claims 1
- QYDBGCZNBBCACI-UHFFFAOYSA-N tris(1-methoxybutan-2-yloxy)bismuthane Chemical compound COCC(CC)O[Bi](OC(CC)COC)OC(CC)COC QYDBGCZNBBCACI-UHFFFAOYSA-N 0.000 claims 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 23
- 239000003595 mist Substances 0.000 abstract description 4
- 239000000126 substance Substances 0.000 abstract description 3
- 230000015654 memory Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 7
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 150000004703 alkoxides Chemical class 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000000137 annealing Methods 0.000 description 4
- 239000007788 liquid Substances 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 3
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- VNSWULZVUKFJHK-UHFFFAOYSA-N [Sr].[Bi] Chemical compound [Sr].[Bi] VNSWULZVUKFJHK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 239000012705 liquid precursor Substances 0.000 description 2
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- MDLKWDQMIZRIBY-UHFFFAOYSA-N 1-(dimethylamino)ethanol Chemical group CC(O)N(C)C MDLKWDQMIZRIBY-UHFFFAOYSA-N 0.000 description 1
- CSZZMFWKAQEMPB-UHFFFAOYSA-N 1-methoxybutan-2-ol Chemical group CCC(O)COC CSZZMFWKAQEMPB-UHFFFAOYSA-N 0.000 description 1
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- OOHCSYFCNNEIIP-UHFFFAOYSA-N S(I)I.[Sb] Chemical compound S(I)I.[Sb] OOHCSYFCNNEIIP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002115 bismuth titanate Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 150000007942 carboxylates Chemical class 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 230000005499 meniscus Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 150000003657 tungsten Chemical class 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
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Abstract
Description
Claims (24)
- 多孔性シリコン、シリカ、又はアルミナ基板の孔に屈折率nが電圧依存性を有する材料を堆積させる方法であって、
堆積される前記材料の前駆体物質を含む前駆体溶液を用意すること、
前記前駆体溶液を微細液滴の形態にすること、及び、
前記孔に前記前駆体溶液を堆積させるため、前記微細液滴を前記多孔性基板に接触させること、
を含むことを特徴とする方法。 - 上記液滴の径が2μm以下であり、好ましくは0.1〜0.3μmであることを特徴とする請求項1に記載の方法。
- 上記孔が二次元に配列され、且つ、該孔の径が0.05〜5μm、好ましくは0.3〜4μmであることを特徴とする請求項1又は2に記載の方法。
- 上記孔が三次元に配列され、該孔の最小径が0.05〜5μmであり、好ましくは0.3〜4μmであることを特徴とする請求項1又は2に記載の方法。
- 上記前駆体溶液が、非水溶剤中の溶液であることを特徴とする請求項1から4のいずれかに記載の方法。
- 堆積の間、上記基板がUV照射されることを含むことを特徴とする請求項1から5のいずれかに記載の方法。
- 温度が15〜40℃である堆積チャンバにて堆積が行われる請求項1から6のいずれかに記載の方法。
- 圧力が0.2〜0.9気圧である堆積チャンバにて堆積が行われることを特徴とする請求項1から7のいずれかに記載の方法。
- (1)所定時間堆積を行うこと、
(2)堆積を一旦停止すること、
(3)上記前駆体溶液から溶剤を蒸発させるために上記基板を加熱すること、
(4)更なる所定時間更なる堆積を行うこと、
(5)堆積を一旦停止すること、及び、
(6)上記前駆体溶液から溶剤を蒸発するために上記基板を更に加熱すること、
を含むことを特徴とする請求項1から8のいずれかに記載の多段階方法。 - 上記堆積材料を加熱によってアニールすることを特徴とする請求項1から9のいずれかに記載の方法。
- 上記基板が上面及び下面を有し、上記孔が両者間に延伸しており、且つ、上記方法が更に該上面及び下面に電極を設けることを含むことを特徴とする請求項1から10のいずれかに記載の方法。
- 上記前駆体溶液を上記孔の中に堆積させることにより、屈折率nが電圧依存性を有する材料で該孔が充填されることを特徴とする請求項1から11のいずれかに記載の方法。
- 上記前駆体溶液を上記孔の中に堆積させることにより、屈折率nが電圧依存性を有する材料で該孔が内張りされることを特徴とする請求項1から11のいずれかに記載の方法。
- 上記孔が屈折率nが電圧依存性を有する材料で充填され、且つ、該充填率が少なくとも60%である、多孔性シリコン、シリカ、又はアルミナから形成される結晶。
- 上記充填率が少なくとも80%であり、好ましくは少なくとも90%であることを特徴とする請求項14に記載の結晶。
- 上記孔が屈折率nが電圧依存性を有する材料で充填され、該充填率が少なくとも60%であり、且つ、上記基板が上面及び下面を有すると共に該上面及び下面にそれぞれ電極が設けられる、多孔性シリコン、シリカ、又はアルミナ基板である電圧調節可能なフォトニックデバイス。
- 上記充填率が少なくとも80%であり、好ましくは少なくとも90%であることを特徴とする請求項16に記載のデバイス。
- 電圧調節可能なフォトニックデバイスの製造において、請求項1から13のいずれかに記載の方法の製造物又は請求項14の製造物を使用すること。
- シリコン又はシリカ基板表面の溝の内面に誘電材料を堆積させる方法であって、
堆積される前記材料の前駆体物質を含む前駆体溶液を用意すること、
前記前駆体溶液を微細液滴の形態にすること、
前記溝の内面に前記前駆体溶液を堆積させるために前記微細液滴を前記基板に接触させること、
を含む方法。 - 上記溝のアスペクト比が少なくとも30:1であり、好ましくは少なくとも50:1であることを特徴とする請求項19に記載の方法。
- 上記誘電材料が、厚さが160nm以下、好ましくは100nm以下であるコーティングとして堆積されることを特徴とする請求項19又は20に記載の方法。
- 更に請求項2、5、6、7、8、10に記載された特徴のいずれかを有することを特徴とする請求項19から21のいずれかに記載の方法。
- シリコン又はシリカのマイクロ電子デバイス、好ましくはシリコン又はシリカのランダムアクセスメモリの製造において、請求項19から22のいずれかに記載の方法の製造物を使用すること。
- 強誘電材料中のビスマス前駆体物質としてビスマス(メトキシメチルプロパノラート)3を使用すること。
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WO2013052927A2 (en) | 2011-10-07 | 2013-04-11 | Svaya Nanotechnologies, Inc. | Broadband solar control film |
BR112015005468A2 (pt) | 2012-09-17 | 2017-07-04 | Eastman Chem Co | métodos para um processo de deposição rápido e com alta eficiência de transferência, para depositar uma meia bicamada e para formar uma solução de nanopartícula, e, aparelho para formar um revestimento sobre uma superfície de substrato |
US9817166B2 (en) | 2014-12-15 | 2017-11-14 | Eastman Chemical Company | Electromagnetic energy-absorbing optical product and method for making |
US9891347B2 (en) | 2014-12-15 | 2018-02-13 | Eastman Chemical Company | Electromagnetic energy-absorbing optical product and method for making |
US9453949B2 (en) | 2014-12-15 | 2016-09-27 | Eastman Chemical Company | Electromagnetic energy-absorbing optical product and method for making |
US9891357B2 (en) | 2014-12-15 | 2018-02-13 | Eastman Chemical Company | Electromagnetic energy-absorbing optical product and method for making |
US10338287B2 (en) | 2017-08-29 | 2019-07-02 | Southwall Technologies Inc. | Infrared-rejecting optical products having pigmented coatings |
US11747532B2 (en) | 2017-09-15 | 2023-09-05 | Southwall Technologies Inc. | Laminated optical products and methods of making them |
US10613261B2 (en) | 2018-04-09 | 2020-04-07 | Southwall Technologies Inc. | Selective light-blocking optical products having a neutral reflection |
US10627555B2 (en) | 2018-04-09 | 2020-04-21 | Southwall Technologies Inc. | Selective light-blocking optical products having a neutral reflection |
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US5456945A (en) * | 1988-12-27 | 1995-10-10 | Symetrix Corporation | Method and apparatus for material deposition |
US6056994A (en) * | 1988-12-27 | 2000-05-02 | Symetrix Corporation | Liquid deposition methods of fabricating layered superlattice materials |
US4896948A (en) * | 1989-02-21 | 1990-01-30 | International Business Machines Corporation | Simplified double-cavity tunable optical filter using voltage-dependent refractive index |
JP3106898B2 (ja) * | 1995-03-31 | 2000-11-06 | 三菱マテリアル株式会社 | ビスマス含有膜の形成方法 |
US6004392A (en) * | 1995-09-11 | 1999-12-21 | Sony Corporation | Ferroelectric capacitor and manufacturing the same using bismuth layered oxides |
JPH0987848A (ja) * | 1995-09-22 | 1997-03-31 | Kojundo Chem Lab Co Ltd | ビスマス層状強誘電体薄膜の製造方法 |
US5789024A (en) * | 1996-05-15 | 1998-08-04 | New Jersey Institute Of Technology | Subnanoscale composite, N2-permselective membrane for the separation of volatile organic compounds |
US6116184A (en) * | 1996-05-21 | 2000-09-12 | Symetrix Corporation | Method and apparatus for misted liquid source deposition of thin film with reduced mist particle size |
US6350643B1 (en) * | 1997-12-18 | 2002-02-26 | Advanced Technology Materials, Inc. | Reduced degradation of metal oxide ceramic due to diffusion of a mobile specie therefrom |
US6159855A (en) | 1998-04-28 | 2000-12-12 | Micron Technology, Inc. | Organometallic compound mixtures in chemical vapor deposition |
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US6376391B1 (en) * | 1999-12-30 | 2002-04-23 | Novellus Systems Inc | Pulsed or tailored bias for filling gaps with low dielectric constant material |
AU2001258087A1 (en) * | 2000-05-05 | 2001-11-20 | Emmanuel Benjamin Chomski | Photonic bandgap materials based on germanium |
US6813064B2 (en) * | 2000-07-24 | 2004-11-02 | Sajeev John | Electro-actively tunable photonic bandgap materials |
CA2314406A1 (en) | 2000-07-24 | 2002-01-24 | Sajeev John | Electro-actively tunable photonic bandgap materials |
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GB2414018B (en) | 2007-07-25 |
GB2429202A (en) | 2007-02-21 |
GB0302655D0 (en) | 2003-03-12 |
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