JP2006521725A - インピーダンスマッチングネットワークおよびネットワークアセンブリを提供するための方法およびシステム - Google Patents

インピーダンスマッチングネットワークおよびネットワークアセンブリを提供するための方法およびシステム Download PDF

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Publication number
JP2006521725A
JP2006521725A JP2006503694A JP2006503694A JP2006521725A JP 2006521725 A JP2006521725 A JP 2006521725A JP 2006503694 A JP2006503694 A JP 2006503694A JP 2006503694 A JP2006503694 A JP 2006503694A JP 2006521725 A JP2006521725 A JP 2006521725A
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Prior art keywords
matching network
magnetic core
variable
assembly
processing system
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JP2006503694A
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JP2006521725A5 (enExample
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ウィンドホーン、トーマス・エイチ．
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
  • Coils Or Transformers For Communication (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2006503694A 2003-02-25 2004-02-20 インピーダンスマッチングネットワークおよびネットワークアセンブリを提供するための方法およびシステム Pending JP2006521725A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44954303P 2003-02-25 2003-02-25
PCT/US2004/004846 WO2004077894A2 (en) 2003-02-25 2004-02-20 Method and system for providing impedance matching network and network assembly

Publications (2)

Publication Number Publication Date
JP2006521725A true JP2006521725A (ja) 2006-09-21
JP2006521725A5 JP2006521725A5 (enExample) 2007-04-05

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JP2006503694A Pending JP2006521725A (ja) 2003-02-25 2004-02-20 インピーダンスマッチングネットワークおよびネットワークアセンブリを提供するための方法およびシステム

Country Status (4)

Country Link
US (1) US7212078B2 (enExample)
JP (1) JP2006521725A (enExample)
KR (1) KR101002371B1 (enExample)
WO (1) WO2004077894A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
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JP2008192633A (ja) * 2007-01-31 2008-08-21 Hitachi High-Technologies Corp プラズマ処理装置
JP2017531282A (ja) * 2014-08-15 2017-10-19 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマ処理システム用のコンパクトな構成可能なモジュール式高周波整合ネットワークアセンブリ

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US9741593B2 (en) 2015-08-06 2017-08-22 Applied Materials, Inc. Thermal management systems and methods for wafer processing systems
US10504700B2 (en) 2015-08-27 2019-12-10 Applied Materials, Inc. Plasma etching systems and methods with secondary plasma injection
US10504754B2 (en) 2016-05-19 2019-12-10 Applied Materials, Inc. Systems and methods for improved semiconductor etching and component protection
US9865484B1 (en) 2016-06-29 2018-01-09 Applied Materials, Inc. Selective etch using material modification and RF pulsing
CN110495250B (zh) 2016-08-09 2021-06-18 卓缤科技贸易公司 射频处理设备和方法
US10546729B2 (en) 2016-10-04 2020-01-28 Applied Materials, Inc. Dual-channel showerhead with improved profile
US10431429B2 (en) 2017-02-03 2019-10-01 Applied Materials, Inc. Systems and methods for radial and azimuthal control of plasma uniformity
US10943834B2 (en) 2017-03-13 2021-03-09 Applied Materials, Inc. Replacement contact process
JP7176860B6 (ja) 2017-05-17 2022-12-16 アプライド マテリアルズ インコーポレイテッド 前駆体の流れを改善する半導体処理チャンバ
US11276590B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Multi-zone semiconductor substrate supports
US11276559B2 (en) 2017-05-17 2022-03-15 Applied Materials, Inc. Semiconductor processing chamber for multiple precursor flow
US10297458B2 (en) 2017-08-07 2019-05-21 Applied Materials, Inc. Process window widening using coated parts in plasma etch processes
US10715095B2 (en) * 2017-10-06 2020-07-14 Lam Research Corporation Radiofrequency (RF) filter for multi-frequency RF bias
US10903054B2 (en) 2017-12-19 2021-01-26 Applied Materials, Inc. Multi-zone gas distribution systems and methods
US11328909B2 (en) 2017-12-22 2022-05-10 Applied Materials, Inc. Chamber conditioning and removal processes
US10854426B2 (en) 2018-01-08 2020-12-01 Applied Materials, Inc. Metal recess for semiconductor structures
US10964512B2 (en) 2018-02-15 2021-03-30 Applied Materials, Inc. Semiconductor processing chamber multistage mixing apparatus and methods
US10319600B1 (en) 2018-03-12 2019-06-11 Applied Materials, Inc. Thermal silicon etch
US10886137B2 (en) 2018-04-30 2021-01-05 Applied Materials, Inc. Selective nitride removal
JP6846387B2 (ja) * 2018-06-22 2021-03-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US10622972B2 (en) 2018-09-10 2020-04-14 Advanced Energy Industries, Inc. Variable capacitor bank
US11049755B2 (en) 2018-09-14 2021-06-29 Applied Materials, Inc. Semiconductor substrate supports with embedded RF shield
US10892198B2 (en) 2018-09-14 2021-01-12 Applied Materials, Inc. Systems and methods for improved performance in semiconductor processing
US11062887B2 (en) * 2018-09-17 2021-07-13 Applied Materials, Inc. High temperature RF heater pedestals
US11417534B2 (en) 2018-09-21 2022-08-16 Applied Materials, Inc. Selective material removal
US11682560B2 (en) 2018-10-11 2023-06-20 Applied Materials, Inc. Systems and methods for hafnium-containing film removal
US11121002B2 (en) 2018-10-24 2021-09-14 Applied Materials, Inc. Systems and methods for etching metals and metal derivatives
US11437242B2 (en) 2018-11-27 2022-09-06 Applied Materials, Inc. Selective removal of silicon-containing materials
US11721527B2 (en) 2019-01-07 2023-08-08 Applied Materials, Inc. Processing chamber mixing systems
US10920319B2 (en) 2019-01-11 2021-02-16 Applied Materials, Inc. Ceramic showerheads with conductive electrodes
US11158488B2 (en) * 2019-06-26 2021-10-26 Mks Instruments, Inc. High speed synchronization of plasma source/bias power delivery
JP7542630B2 (ja) * 2020-01-30 2024-08-30 ラム リサーチ コーポレーション 伸長ｒｆストラップを有するインピーダンス整合器
US11348761B2 (en) * 2020-09-04 2022-05-31 Tokyo Electron Limited Impedance matching apparatus and control method
JP2022067569A (ja) * 2020-10-20 2022-05-06 パナソニックＩｐマネジメント株式会社 プラズマ処理装置
US12020902B2 (en) 2022-07-14 2024-06-25 Tokyo Electron Limited Plasma processing with broadband RF waveforms
US12284747B2 (en) * 2023-03-07 2025-04-22 Finesse Technology Co., Ltd. Hollow cathode discharge assistant transformer coupled plasma source and operation method of the same

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JPH08264515A (ja) * 1994-04-20 1996-10-11 Tokyo Electron Ltd プラズマ処理装置、処理装置及びエッチング処理装置
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008192633A (ja) * 2007-01-31 2008-08-21 Hitachi High-Technologies Corp プラズマ処理装置
JP2017531282A (ja) * 2014-08-15 2017-10-19 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ プラズマ処理システム用のコンパクトな構成可能なモジュール式高周波整合ネットワークアセンブリ

Also Published As

Publication number Publication date
US20040163594A1 (en) 2004-08-26
KR20060015465A (ko) 2006-02-17
WO2004077894A2 (en) 2004-09-10
WO2004077894A3 (en) 2004-11-18
KR101002371B1 (ko) 2010-12-17
US7212078B2 (en) 2007-05-01

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